BPV22F www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: leaded * Package form: side view * Dimensions (in mm): 4.5 x 5 x 6 * Radiant sensitive area (in mm2): 7.5 * High radiant sensitivity * Daylight blocking filter matched with 940 nm emitters * Fast response times 94 8633 * Angle of half sensitivity: = 60 * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 DESCRIPTION BPV22F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwdith is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package. APPLICATIONS * High speed detector for infrared radiation * Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT Ira (A) (deg) 0.5 (nm) 80 60 870 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV22F Note * Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE BPV22F Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Thermal resistance junction/ambient Rev. 1.6, 24-Aug-11 VALUE UNIT VR 60 V PV 215 mW Tj 100 C Tamb - 40 to + 100 C C Tstg - 40 to + 100 t5s Tsd 260 C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Storage temperature range Soldering temperature SYMBOL Document Number: 81508 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV22F www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 A, E = 0 V(BR) VR = 10 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 70 pF VR= 12 V, f = 1 MHz RS 400 PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Serial resistance mW/cm2, = 950 nm MIN. TYP. MAX. UNIT 1 1.3 V 2 30 nA 60 V Open circuit voltage Ee = 1 Vo 370 mV Temperature coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, = 950 nm Ik 75 A Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 80 A Temperature coefficient of Ira Ee = 1 mW/cm2, = 950 nm, VR = 10 V TKIra 0.1 %/K VR = 5 V, = 870 nm s() 0.35 A/W VR = 5 V, = 950 nm s() 0.6 A/W Angle of half sensitivity 60 deg Wavelength of peak sensitivity p 950 nm 0.5 870 to 1050 nm Absolute spectral sensitivity Range of spectral bandwidth 55 = 950 nm 90 % Noise equivalent power VR = 10 V, = 950 nm NEP 4 x 10-14 W/ Hz Detectivity VR = 10 V, = 950 nm D* 6 x 1012 cmHz/W Rise time VR = 10 V, RL = 1 k, = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 k, = 820 nm tf 100 ns VR = 12 V, RL = 1 k, = 870 nm fc 4 MHz VR = 12 V, RL = 1 k, = 950 nm fc 1 MHz Quantum efficiency Cut-off frequency BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (C) VR = 5 V = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.6, 24-Aug-11 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81508 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV22F www.vishay.com Vishay Semiconductors S ()rel - Relative Spectral Sensitivity I ra - Reverse Light Current (A) 1000 100 10 VR = 5 V = 950 nm 1 0.1 0.01 0.1 1.0 0.8 0.6 0.4 0.2 0 750 10 1 E e - Irradiance (mW/cm2) 94 8411 1.2 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 1150 1050 - Wavelength (nm) 94 8408 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0 100 10 20 30 0.5 mW/cm2 = 950 nm 2 0.2 mW/cm 10 0.1 mW/cm2 0.05 mW/cm2 40 1.0 0.9 50 0.8 60 70 0.7 80 0.02 mW/cm2 1 0.1 1 10 100 VR - Reverse Voltage (V) 94 8412 - Angular Displacement Srel - Relative Sensitivity I ra - Reverse Light Current (A) 1 mW/cm2 0.6 0.4 0.2 0 94 8413 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.6, 24-Aug-11 Document Number: 81508 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV22F www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5 0.15 3.2 0.2 (2.4) 0.2 0.3 6 R 2.25 (sphere) 18.8 0.5 8.6 0.3 < 0.7 2.5 4.5 + 0.1 - 0.3 0.65 + 0.1 - 0.2 0.1 3.4 +- 0.3 Area not plane A C 0.45 + 0.2 - 0.1 2.54 nom. 0.4 + 0.15 1.1 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 Rev. 1.6, 24-Aug-11 Document Number: 81508 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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