BPV22F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 1Document Number: 81508
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPV22F is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwdith is matched
with 900 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8633
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
BPV22F 80 ± 60 870 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV22F Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
BPV22F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 2Document Number: 81508
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF11.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
Serial resistance VR= 12 V, f = 1 MHz RS400 Ω
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo370 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik75 μA
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 55 80 μA
Temperature coefficient of Ira Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V TKIra 0.1 %/K
Absolute spectral sensitivity VR = 5 V, λ = 870 nm s(λ)0.35A/W
VR = 5 V, λ = 950 nm s(λ)0.6A/W
Angle of half sensitivity ϕ± 60 deg
Wavelength of peak sensitivity λp950 nm
Range of spectral bandwidth λ0.5 870 to 1050 nm
Quantum efficiency λ = 950 nm η90 %
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz
Detectivity VR = 10 V, λ = 950 nm D* 6 x 1012 cm√Hz/W
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
Cut-off frequency VR = 12 V, RL = 1 kΩ, λ = 870 nm fc4MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm fc1MHz
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
BPV22F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 3Document Number: 81508
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8411
I-Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm
2
)
V
R
=5V
λ =950nm
0.1 1 10
1
10
100
100
94 8412
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
I-Reverse Light Current (µA)
ra
0.05 mW/cm
2
0.02 mW/cm
2
λ = 950 nm
V
R
-Reverse Voltage (V)
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1 100
110
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S (λ)rel - Relative Spectral Sensitivity
λ - Wavelength (nm)
1150
94 8408
1.0
0.4 0.2 0
94 8413
0.6
0.9
0.8
0°°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
S
rel
- Relative Sensitivity
BPV22F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 4Document Number: 81508
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
95 11475
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
Area not plane
0.45 + 0.2
- 0.1 0.4 + 0.15
1.1 ± 0.2
4.5 ± 0.2 (2.4)
5+ 0.1
- 0.3
3.2 ± 0.2
6± 0.3
2.5 ± 0.15
8.6 ± 0.3
18.8 ± 0.5
< 0.7
0.65 + 0.1
- 0.2 3.4 + 0.1
- 0.3
AC
2.54 nom.
R 2.25 (sphere)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
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