BB804 Vishay Semiconductors Dual Varicap Diode Features * * * * Silicon Epitaxial Planar Diode Common cathode Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 18108 Applications Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Type differentiation Ordering code Marking Remarks BB804-0 VRRM = 20 V, CD 42-43, 5 pF BB804-0-GS18 or BB804-0-GS08 FM0 Tape and Reel BB804-1 VRRM = 20 V, CD 43-44, 5 pF BB804-1-GS18 or BB804-1-GS08 FM1 Tape and Reel BB804-2 VRRM = 20 V, CD 44-45, 5 pF BB804-2-GS18 or BB804-2-GS08 FM2 Tape and Reel BB804-3 VRRM = 20 V, CD 45-46, 5 pF BB804-3-GS18 or BB804-3-GS08 FM3 Tape and Reel BB804-4 VRRM = 20 V, CD 46-47, 5 pF BB804-4-GS18 or BB804-4-GS08 FM4 Tape and Reel 1) Any selection part and any marking out of the below listed FM0 to FM4 is possible. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit VRRM 20 V Reverse voltage VR 18 V Forward current IF 50 mA Symbol Value Unit Tj 100 C Tstg - 55 to + 150 C Repetitive peak reverse voltage Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction temperature Storage temperature range Document Number 85554 Rev. 1.6, 15-Apr-05 Test condition www.vishay.com 1 BB804 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Reverse current Part Symbol Typ. Max Unit IR 20 nA VR = 16 V, Tj = 60 C IR 0.2 A Diode capacitance 1) VR = 2 V, f = 1 MHz Diode capacitance VR = 2 V, f = 1 MHz CD 42 47.5 pF Group 0 CD 42 43.5 pF Group 1 CD 43 44.5 pF Group 2 CD 44 45.5 pF Group 3 CD 45 46.5 pF pF Group 4 CD 46 47.5 CD2/ CD8 1.65 1.75 Capacitance ratio VR = 2 V, 8 V, f = 100 MHz Series resistance CD = 38 pF, f = 100 MHz rs Figure of merit CD = 38 pF, f = 100 MHz Q 1) Min VR = 16 V 0.3 100 0.4 140 A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance groups available only on request. 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 2 Document Number 85554 Rev. 1.6, 15-Apr-05 BB804 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85554 Rev. 1.6, 15-Apr-05 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1