T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 1 of 10
2N6764, 2N6766, 2N6768 and 2N6770
Availa ble on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
Qualified Levels:
JAN, JANT X, and
JANTXV
DESCRIPTION
This family of 2N6764, 2N6 766, 2N6 768 and 2N6770 switching transistors are military
qualified up to the JANTXV level for high-reliability applications. These devices are also
availab le in a thru hole TO-254AA leaded package. Microsemi also offers numerous other
transistor products to meet higher and lower po wer ratings with vari ous s witching s peed
requirements in both through-hole and surface-mount packages.
TO-204AE (TO-3)
Package
Also available in:
TO-254AA package
(leaded)
2N6764T1 & 2N6770T1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6764, 2N 6766, 2N 676 8 and 2N6770 number series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Low-profile metal can design.
• Military and other high-rel iability a pplica tions.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
T
J
&
Tstg
-55 to +150 °C
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
0.83
oC/W
Total Power Dissipation
@ T
A
= +25 °C
@ T
C
= +25 °C
(1)
PT
4
150
W
Drain-Source Voltage, dc
2N6764
2N6766
2N6768
2N6770
VDS
100
200
400
500
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ T
C
= +25 ºC
(2)
2N6764
2N6766
2N6768
2N6770
ID1
38.0
30.0
14.0
12.0
A
Drain Current, dc @ T
C
= +100 ºC
(2)
2N6764
2N6766
2N6768
2N6770
ID2
24.0
19.0
9.0
7.75
A
Off-State Current (Peak Total Value)
(3)
2N6764
2N6766
2N6768
2N6770
IDM
152
120
56
48
A (pk)
Source Current 2N6764
2N6766
2N6768
2N6770
IS
38.0
30.0
14.0
12.0
A
Notes featured on next page.
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 2 of 10
2N6764, 2N6766, 2N6768 and 2N6770
NOTES: 1. Derate linearly by 1.2 W/º C f or TC > +25 ºC.
2. The foll owing form ul a derives the maximum theoret ical ID limit. ID is limited by package and internal wires and may also be l imited by
pin diameter:
3. IDM = 4 x ID1 as calculated in note 2.
MECHANICAL and PACKAGING
• CASE: TO-3 metal can.
• TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compli ant mat te-tin plating is also available.
• MARKING: Manufacturer's ID, part number, date code.
• WEIGHT: Approximately 12.7 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6764 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 3 of 10
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = 1.0 mA
2N6764
2N6766
2N6768
2N6770
V(BR)DSS
100
200
400
500
V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125 °C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125 °C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
VGS = 0 V, VDS = 400 V
2N6764
2N6766
2N6768
2N6770
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 100 V, TJ = +125 °C
VGS = 0 V, VDS = 200 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
VGS = 0 V, VDS = 500 V, TJ = +125 °C
2N6764
2N6766
2N6768
2N6770
IDSS2
1.0
mA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
2N6764
2N6766
2N6768
2N6770
IDSS3
0.25
mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 7.75 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)1
0.055
0.085
0.3
0.4
Ω
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 38.0 A pulsed
VGS = 10 V, ID = 30.0 A pulsed
VGS = 10 V, ID = 14.0 A pulsed
VGS = 10 V, ID = 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)2
0.065
0.09
0.4
0.5
Ω
Static Drain-Source On-State Resistance
TJ = +125 °C
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 7.75 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)3
0.094
0.153
0.66
0.88
Ω
Diode Forward Voltage
VGS = 0 V, ID = 38.0 A pulsed
VGS = 0 V, ID = 30.0 A pulsed
VGS = 0 V, ID = 14.0 A pulsed
V
GS
= 0 V, I
D
= 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
VSD
1.9
1.9
1.7
1.7
V
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 4 of 10
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764
2N6766
2N6768
2N6770
Qg(on)
125
115
110
120
nC
Gate to Source Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
V
GS
= 10 V, I
D
= 12.0 A, V
DS
= 250 V
2N6764
2N6766
2N6768
2N6770
Qgs
22
22
18
19
nC
Gate to Drain Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764
2N6766
2N6768
2N6770
Qgd
65
60
65
70
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100
V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200
V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250
V
2N6764
2N6766
2N6768
2N6770
td(on)
35
ns
Rinse time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100
V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200
V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250
V
2N6764
2N6766
2N6768
2N6770
tr
190
ns
Turn-off delay time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 1 0 V, RG = 2.35 Ω, VDD = 100
V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200
V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250
V
2N6764
2N6766
2N6768
2N6770
td(off)
170
ns
Fall time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100
V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200
V
2N6764
2N6766
2N6768
2N6770
tf
130
ns
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 5 of 10
2N6764, 2N6766, 2N6768 and 2N6770
I
D
= 12.0 A, V
GS
= 10 V, R
G
= 2.35 Ω, V
DD
= 250
V
Diode Reverse Recovery Time
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 38.0 A
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 30.0 A
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 14.0 A
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 12.0 A
2N6764
2N6766
2N6768
2N6770
trr
500
950
1200
1600
ns
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 6 of 10
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS
t1, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Response Curves
Thermal Response (ZθJC)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 7 of 10
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N6764 For 2N67 66
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N6768 For 2N6770
I
D
DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
I
D
DRAIN CURRENT (AMPERES)
I
D
DRAIN CURRENT (AMPERES)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 8 of 10
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6764
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6766
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 9 of 10
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6768
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6770
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 10 of
10
2N6764, 2N6766, 2N6768 and 2N6770
PACKAGE DIMENSIONS
NOTE:
1. Dim ens ions are in inches.
2. Millimeters are given for general information only.
3. These dimensions should be measured at points .050
inch (1.27 mm) and .055 inch (1.40 mm) below the
seating plane. When gauge is not used measurement
will be made at the seating plane.
4. The seating plane of the header shall be flat within
.001 inch (0.03 mm) concave to .004 inch (0.10 mm)
convex inside a .930 inch (23.62 mm) diameter circle
on the center of the header and flat within .001 inch
(0.03 mm) concave to .006 inch (0.15 mm) convex
overall.
5. These dimensions pertain to the 2N6764 and 2N6766
types.
6. These dimensions pertain to the 2N6768 and 2N6770
types.
7. Mounting holes shall be deburred on the seating plane side.
8. Drain is electrically connected to the case.
9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
SCHEMATIC
DIM
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
-
.875
-
22.23
B
.060
.135
1.52
3.43
C
.250
.360
6.35
9.15
D
.312
.500
7.92
12.70
D2
.050
1.27
(3)
E
.057
.038
.063
.043
1.45
0.97
1.60
1.10
DIA. (5)
DIA. (6)
F
.131
.188
3.33
4.78
Radius
G
1.177
1.197
29.90
30.40
H
.655
.675
16.64
17.15
J
.205
.225
5.21
5.72
K
.420
.440
10.67
11.18
L
.495
.525
12.57
13.3
Radius
M
.151
.161
3.84
4.09
DIA. (7)
