A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCER IC = 5.0 mA RBE = 10Ω45 V
BVCBO IC = 1.0 mA 45 V
ICBO VCB = 28 V 1.0 mA
BVEBO IE = 1.0 mA 3.5 V
hFE VCE = 5.0 V IC = 200 mA 15 120 ---
COB VCB = 28 V f = 1.0 MHz 6.5 pF
Pout
η
ηη
ηC
GP
VCC = 28 V Pin = 500 mW f = 1.0 GHz 5.0
50
10
6.6
52
11.2
W
%
dB
NPN SILICON RF POWER TRANSISTOR
MSC81111
DESCRIPTION:
The MSC81111 is Designed for Class
"C" Amplifier Applicatioons from 0.4 to
1.2 GHz, Supplied in Common Base
Package.
MAXIMUM RATINGS
IC600 mA
VCB 35 V
PDISS 21.8 W @ T C = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 8 OC/W
PACKAGE STYLE HLP-1
1 = Emitter 2 = Collector
3 = Base
Inches Millimeters
Dim: Min Max Min Max
A 0.790 0.810 20.07 20.6
B 0.225 0.235 5.72 5.97
C 0.144 0.180 3.66 4.58
D 0.115 0.125 2.93 3.17
E 0.055 0.065 1.40 1.65
F 0.045 0.055 1.15 1.39
H 0.115 0.135 2.93 3.42
J 0.003 0.006 0.08 0.15
K 0.225 0.275 5.72 6.98
N 0.220 0.240 5.59 6.09
Q 0.125 0.135 3.18 3.42
U 0.552 0.572 14.03 14.5
