MOS TRANSISTORS MOS TRANSISTOREN P-CHANNEL ENHANCEMENT MODE MOSFETS Power Lead Vier)oss | V(ar)css | V(er}oc Dis. loss Iossr to (on) Ves(in) Tos (on) Yis Ciss Crss Case| Con- Part. No, Volts Voits Volts | 25C Amb nA nA mA Volts Ohms umho pF pF P.18 tig. Min Min Min mW Max Typ Typ Typ Min/Max Typ Typ Typ Typ P19 P.2 *MEM 511 30 ~30 30 225 0.5 0.05* 6 3.0/-6.0 150 2,500 3.5 2.5 4 1 *MEM 511C 25 25 25 175 3.0 0.05* 6 3.0/6.0 150 2,500 4.0 4.0 4 1 *MEM 517 30 25 25 600 0.8 0.15* 60 2.5/-5.0 35 12,000 10.0 10.0 2 1 *MEM 517A ~30 25 25 600 0.8 0.15* 60 2.5/5.0 35 12,000 10.0 10.0 1 6 *MEM 517B 30 25 25 300 08 0.15* 60 2.5/5.0 356 12,000 10.0 10.0 4 1 #* MEM 517C 25 25 25 450 3.5 0.15* 50 2.5/5.0 35 12,000 10.0 10.0 2 1 MEM 520 30 40 40 225 0.5 0.03 pA 5 3.0/6.0 150 2,500 | 3.0 2.5 4 1 MEM 520C 25 25 25 175 3.0 0.1 pA 5 3.0/-6.0 150 2,500 | 3.0 2.5 4 1 *MEM 556 50 ~50 50 100 0.1 0.1* 7 3.0/6.0 700 950 0.3 0.3 4 1 f* MEM 556C 45 45 46 100 0.3 0.3* 7 3.0/6.0 700 950 0.4 0.4 4 1 *MEM 560 35 35 35 300 1.0 0.1* 20 ~1.5/-3.0 100 3,500 7.5 1.5 4 1 *MEM 560C 30 ~30 30 200 2.0 0.2* 15 1.0/3.5 175 3,500 8.0 2.0 4 1 MEM 561 30 50 40 225 1.0 0.05 pA 20 1.5/-3.0 100 3,500 75 3.0 4 1 # MEM 561C 25 40 30 225 0.5 ~0.5 pA 30 1.5/3.0 150 3,500 75 3.0 4 1 9* MEM 575 25 25 25 300 1.0 0.2* 200 1.0/3.5 13 15,000 45.0 15.0 4 1 *MEM 803 20 20 20 150 3.0 0.2* -2.0/-6.5 200 1,000 45 4.0 4 1 MEM 804 30 40 35 225 2.0 0.1 pA 12 1.5/3.0 175 3,000 7.0 3.0 4 1 MEM 806 40 40 40 300 1.0 0.1 pA 7 ~2.0/5.5 150 2,800 45 1.0 4 1 MEM 806A 40 40 40 300 0.1 ~0.05 pA 7 2.0/5.5 150 2,800 45 1.0 4 1 #* MEM 807 40 40 40 300 0.5 0.1* -7 ~2.0/-5.5 150 2,800 4.5 1.0 4 1 *MEM 807A 40 40 40 300 0.05 0.2* 7 2.0/5.5 150 2,800 4.5 1.0 4 1 *MEM 814 35 35 35 300 1.0 0.1* 20 ~1.5/3.0 80 3,500 6.0 1.0 4 1 4* MEM 816 30 80 30 200 5.0 0.2* 20 2.0/5.0 150 3,000 6.0 3.5 10 3 { MEM 817 45 200 45 225 0.5 0.01 pA 12 2.5/5.5 _ 2,000 3.5 1.2 4 1 2N 3608 25 25 25 350 1.0 0.1 pA 4 4.0/6.0 150 2,000 40 3.5 2 1 2N 4065 30 25 25 225 0.1 0.5 pA 6 i 3.0/6.0 500 2,000 2.5 0.3 4 1 2N 4120 30 40 40 350 0.1 011 6.5 3.0/6.0 600 900 3.0 2.5 4 1 2N 4352 25 15 25 300 3.0 5.0 pA 4 1.0/5.0 150 2,500 2.5 0.7 4 3 *2N 4353 30 30 30 250 0.5 0.1* 4 3.0/5.0 125 3,000 6.0 3.0 4 1 3N 145 30 50 50 250 1.0 1.0 2.0/6.0 600 _ 0.1 0.5 4 1 3N 146 30 50 50 250 1.0 0.1 2.0/6.0 600 _ 0.1 0.5 4 1 3N 155 35 50 50 250 0.4 5.0 7 1.5/-3.2 250 _ 25 0.7 4 3 3N 155A 35 650 50 250 0.1 5.0 7 ~1.5/3.2 150 _ 2.5 0.7 4 3 3N 156 35 50 50 250 0.5 5.0 7 3.0/5.0 300 ~ 2.5 0.7 4 3 3N 156A 35 50 50 250 0.1 5.0 7 3.0/-5.0 150 _ 2.5 0.7 4 3 8N 157 35 50 50 250 0.5 5.0 4 1.5/3.2 2,500 2.5 0.7 4 3 3N 157A 50 50 50 250 0.1 5.0 4 1.5/3.2 2,500 2.5 0.7 4 3 3N 158 35 50 50 250 0.5 5.0 4 3.0/5.0 _ 2,500 2.5 0.7 4 3 3N 158A 50 50 50 250 0.1 5.0 4 3.0/5.0 oo 2,500 2.5 0.7 4 3 3N 160 25 ~25 25 250 5.0 5.0 pA 60 1.5/5.0 75 4,500 5.0 2.0 4 1 3N 161 25 25 25 250 5.0 0.05 -60 1.5/-5.0 75 4,500 5.0 2.0 4 1 *3N 162 30 25 25 600 10 0.2* 50 ~2.5/5.0 40 13,000 10.0 5.0 2 1 3N 163 40 ~40 40 375 0.1 0.01 20mA 2.0/5.0 200 3,000 2.0 0.7 4 1 3N 164 30 ~30 30 375 0.2 0.01 20 mA 2.0/5.0 250 3,000 2.0 0.7 4 1 3N 167 30 30 30 225 0.03 0.07 200 mA 2.0/ 6.0 17 _ 3.5 12.0 4 1 3N 168 ~25 25 25 225 0.08 0.4 100 mA 2.0/--6.0 35 _ 3.5 12.0 4 1 3N 172 40 40 40 375 0.3 0.1 20 2.0/5.0 200 3,000 3.0 0.8 4 1 8N 173 40 40 40 375 8.0 0.3 20 2.0/5.0 300 3,000 3.0 0.8 4 1 3N 174 30 30 30 360 3.0 2.0pA 10 2.0/6.0 800 2,000 3.5 0.6 4 1 *3N 178 758 46 75 100 0.1 0.15* 6 4,5/-55 750 1,000 0.3 0.2 4 1 *3N 179 60 45 60 100 0.3 0.2* 6 4.0/-6.0 800 850 0.4 0.3 4 1 *3N 180 A40 45 40 100 0.3 0.3* 6 3.0/6.0 900 850 0.45 0.4 4 1 *3N 181 30 25 30 300 0.3 0.15* 70 3.0/4.0 35 12,500 12.0 6.5 4 1 *3N 182 30 25 30 300 1.0 0.2* 55 ~2.5/5.0 40 10,000 12.0 7.0 4 1 *3N 183 25 25 25 300 2.0 0.3* 40 2.0/6.0 50 9,000 16.0 10.0 4 1 *3N 184 35 35 35 300 0.5 ~0.05* -30 2.0/3.0 80 3,500 7.0 3.0 4 1 *3N 185 30 ~30 30 300 1.0 0.1* 20 1.5/3.0 125 3,000 8.0 4.0 4 1 *3N 186 25 25 25 300 2.0 0.2* 15 1.0/3.5 150 2,800 8.0 4.0 4 1 *3N 218 25 25 25 300 0.1 0.2* 200 1.0/3.5 15 15,000 45.0 15.0 4 1 CHIPS: All MOS & C/MOS products listed in this catalog are available in chip form. t Preferred type. Available from stock. 14 # Type preferable. Disponible au magasin. * Diode Protected Gate. * Grille protge par diode. * Gate mit Diode geschitzt. t# Vorzugstyp. Ab Lager lieferbar.