APTM20HM16FTG - MICROCHIP TECHNOLOGY

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

www.microsemi.com 1

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NTC2

OUT2OUT1

VBUS

0/VBU SNTC1

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

VDSS Drain - Source Breakdown Voltage 200 V

Tc = 25°C 104

ID Continuous Drain Current Tc = 80°C 77

IDM Pulsed Drain current 416

VGS Gate - Source Voltage ±30 V

RDSon Drain - Source ON Resistance 19 m

PD Maximum Power Dissipation Tc = 25°C 390 W

IAR Avalanche current (repetitive and non repetitive) 104 A

EAR Repetitive Avalanche Energy 50

EAS Single Pulse Avalanche Energy 3000 mJ

VDSS = 200V

RDSon = 16m typ @ Tj = 25°C

ID = 104A @ Tc = 25°C

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

Features

 Power MOS 7® FREDFETs

- Low RDSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

 Kelvin source for easy drive

 Very low stray inductance

- Symmetrical design

- Lead frames for power connections

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Full - Bridge

MOSFET Power Module

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VGS = 0V,VDS = 200V Tj = 25°C 250

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1000 µA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 52A 16 19

m

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V

IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input Capacitance 7220

Coss Output Capacitance 2330

Crss Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz 146

Qg Total gate Charge 140

Qgs Gate – Source Charge 53

Qgd Gate – Drain Charge

VGS = 10V

VBus = 100V

ID =104A 67

Td(on) Turn-on Delay Time 32

Tr Rise Time 64

Td(off) Turn-off Delay Time 88

Tf Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 133V

ID = 104A

RG = 5Ω 116

Eon Turn-on Switching Energy 849

Eoff Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 133V

ID = 104A, RG = 5Ω 929

µJ

Eon Turn-on Switching Energy 936

Eoff Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 133V

ID = 104A, RG = 5Ω 986

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 104

IS Continuous Source current

(Body diode)

Tc = 80°C 77 A

VSD Diode Forward Voltage VGS = 0V, IS = - 104A 1.3 V

dv/dt Peak Diode Recovery  5 V/ns

Tj = 25°C 230

trr Reverse Recovery Time Tj = 125°C 450 ns

Tj = 25°C 0.9

Qrr Reverse Recovery Charge

IS = - 104A

VR = 133V

diS/dt = 100A/µs

Tj = 125°C 3.4

µC

 dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS  - 104A di/dt  700A/µs VR  VDSS Tj  150°C

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case Thermal Resistance 0.32 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2.5 4.7 N.m

Wt Package Weight 160 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R25 Resistance @ 25°C 50 k

B 25/85 T

25 = 298.15 K 3952 K



























exp

85/25

SP4 Package outline (dimensions in mm)

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com

T: Thermistor temperature

RT: Thermistor value at T

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

6.5V

7.5V

8.5V

10V

VGS=15V

100

200

300

400

500

600

700

0 4 8 1216202428

VDS, Drain to Source Voltage (V)

ID, Drain Current (A)

Low Voltage Output Characteristics Transfert Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

100

150

200

250

300

012345678910

VGS, Gate to Source Voltage (V)

ID, Drain Current (A)

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

RDS(on) vs Drain Current

VGS=10V

VGS=20V

0.8

0.9

1.1

1.2

0 25 50 75 100 125 150

ID, Drain Current (A)

RDS(on) Drain to Source ON Resistance

Normalized to

VGS=10V @ 52A

100

120

25 50 75 100 125 150

TC, Case Temperature (°C)

ID, DC Drain Current (A)

DC Drain Current vs Case Temperature

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

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0.90

0.95

1.00

1.05

1.10

1.15

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

BVDSS, Drain to Source Breakdown

Volta

(

Normalized

)

Breakdown Voltage vs Temperature ON resistance vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

RDS(on), Drain to Source ON resistance

(Normalized)

VGS=10V

ID= 52A

Threshold Voltage vs Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-50 -25 0 25 50 75 100 125 150

TC, Case Temperature (°C)

VGS(TH), Threshold Voltage

(Normalized)

Maximum Safe Operating Area

100ms

10ms

1ms

100µs

100

1000

1 10 100 1000

VDS, Drain to Source Voltage (V)

ID, Drain Current (A)

Single pulse

TJ=150°C

TC=25°C

limited by

RDSon

Ciss

Crss

Coss

100

1000

10000

100000

0 1020304050

VDS, Drain to Source Voltage (V)

C, Capacitance (pF)

Capacitance vs Drain to Source Voltage

VDS=40V

VDS=100V

VDS=160V

0 20 40 60 80 100 120 140 160

Gate Charge (nC)

VGS, Gate to Source Voltage (V)

Gate Charge vs Gate to Source Voltage

ID=104A

TJ=25°C

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

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Delay Times vs Current

td(on)

td(off)

100

120

0 25 50 75 100 125 150 175

ID, Drain Current (A)

td(on) and td(off) (ns)

VDS=133V

RG=5Ω

TJ=125°C

L=100µH

Rise and Fall times vs Current

100

120

140

160

0 25 50 75 100 125 150 175

ID, Drain Current (A)

tr and tf (ns)

VDS=133V

RG=5Ω

TJ=125°C

L=100µH

Switching Energy vs Current

Eon

Eoff

0.5

1.5

0 25 50 75 100 125 150 175

ID, Drain Current (A)

Eon and Eoff (mJ)

VDS=133V

RG=5Ω

TJ=125°C

L=100µH

Eon

Eoff

0.5

1.5

2.5

0 5 10 15 20 25 30 35 40 45 50

Gate Resistance (Ohms)

Switching Energy (mJ)

Switching Energy vs Gate Resistance

VDS=133V

ID=104A

TJ=125°C

L=100µH

Hard

switching

ZCS

ZVS

100

150

200

250

300

25 38 50 63 75 88 100

ID, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

VDS=133V

D=50%

RG=5Ω

TJ=125°C

TC=75°C

TJ=25°C

TJ=150°C

100

1000

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

VSD, Source to Drain Voltage (V)

IDR, Reverse Drain Current (A)

Source to Drain Diode Forward Voltage

APTM20HM16FTG

APTM20HM16FTG – Rev 3 October, 2012

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