AOT10N60/AOB10N60/AOTF10N60
600V,10A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 10A
R
DS(ON)
(at V
GS
=10V) < 0.75Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT10N60L & AOTF10N60L & AOB10N60L
Symbol
V
DS
V
GS
Drain-Source Voltage 600
AOT10N60/AOB10N60
V
±30
Gate-Source Voltage
AOTF10N60
The AOT10N60 & AOB10N60 & AOTF10N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
700V@150℃
D
S
AOTF10N60
TO-263
D2PAK
S
G
Top View
TO-220FTO-220
AOT10N60 AOB10N60
D
GD
S
G
D
S
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
MOSFET dv/dt ruggedness 45 V/nsdv/dt
0.5
--
Units
°C/W65
0.5
65
2.5
AOT10N60/AOB10N60
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A,D
Power Dissipation
B
P
D
T
C
=25°C
Thermal Characteristics
300
-55 to 150
250 50
Avalanche Current
C
290
Single plused avalanche energy
G
580
4.4
Repetitive avalanche energy
C
0.4
36Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C I
D
10 10*
7.2 7.2*
°C
V
±30
Gate-Source Voltage
T
C
=100°C A
°C
Maximum Case-to-sink
A
Maximum Junction-to-Case °C/W
°C/W
Derate above 25
o
C
Parameter
2
AOTF10N60
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
5
A
W
W/
o
C
mJ
mJ
Rev.8.0: March 2014
www.aosmd.com Page 1 of 6
AOT10N60/AOB10N60/AOTF10N60
Symbol Min Typ Max Units
600
700
BV
DSS
/
∆TJ
0.65 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3 4 4.5 V
R
DS(ON)
0.6 0.75 Ω
g
FS
15 S
V
SD
0.73 1 V
I
S
Maximum Body-Diode Continuous Current 10 A
I
SM
36 A
C
iss
1100 1320 1600 pF
C
oss
105 130 160 pF
C
rss
7.5 9.3 11 pF
R
g
3 3.8 6 Ω
Q
g
31 40 nC
Q
gs
6 10 nC
Q
gd
14.4 20 nC
t
D(on)
28 35 ns
t
r
66 80 ns
t
D(off)
76 95 ns
Diode Forward Voltage
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
BV
DSS
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
I
D
=250µA, V
GS
=0V
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=10A,
R
G
=25Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=10A
Gate Source Charge
Turn-On Rise Time
Gate Drain Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=5V
I
D
=250µA
V
DS
=480V, T
J
=125°C
Breakdown Voltage Temperature
Coefficient
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
Static Drain-Source On-Resistance V
GS
=10V, I
D
=5A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=5A
Forward Transconductance
D(off)
t
f
64 80 ns
t
rr
290 350 ns
Q
rr
3.9 4.7 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=10A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=10A,dI/dt=100A/µs,V
DS
=100V
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.4A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev.8.0: March 2014 www.aosmd.com Page 2 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
20
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
100
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
V
DS
=40V
25°C
125
°
C
0.4
0.6
0.8
1.0
1.2
1.4
0 4 8 12 16 20 24
RDS(ON) (Ω)
ID(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=10V
ID=5A
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25
°
C
125
°
C
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage
Figure 4: On
-
Resistance vs. Junction Temperature
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.8.0: March 2014 www.aosmd.com Page 3 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 10 20 30 40 50
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=480V
ID=10A
1
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT10N60/AOB10N60 (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF10N60 (Note F)
10µs
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1s
Operating Area for AOT10N60/AOB10N60 (Note F)
Operating Area for AOTF10N60 (Note F)
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev.8.0: March 2014 www.aosmd.com Page 4 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT10N60/AOB10N60 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ton
T
P
D
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF10N60 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Rev.8.0: March 2014 www.aosmd.com Page 5 of 6
AOT10N60/AOB10N60/AOTF10N60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
+
VDC
L
Vgs
Vds
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
VDC
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.8.0: March 2014 www.aosmd.com Page 6 of 6