ON Semiconductor MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated SWITCHMODE applications such as: * * * * * * * Switching Regulators Motor Controls Inverters Solenoid and Relay Drivers Fast Turn-Off Times 1.0 s (max) Inductive Crossover Time -- 20 Amps 2.5 s (max) inductive Storage Time -- 20 Amps Operating Temperature Range -65 to +200C Performance Specified for Reversed Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 197-05 TO-204AE TYPE (TO-3 TYPE) 50 8 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIIII IIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIII IIIIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIII IIIIIIIIII IIII MAXIMUM RATINGS Rating Symbol MJ10015 MJ10016 Unit Collector-Emitter Voltage VCEO 400 500 Vdc Collector-Emitter Voltage VCEV 600 700 Vdc Emitter Base Voltage VEB 8.0 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 50 75 Adc Base Current -- Continuous -- Peak (1) IB IBM 10 15 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD 250 143 1.43 Watts TJ, Tstg -65 to +200 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RJC 0.7 C/W TL 275 C Operating and Storage Junction Temperature Range W/C THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 1 Publication Order Number: MJ10015/D MJ10015 MJ10016 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 400 500 -- -- -- -- Unit OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0, Vclamp = Rated VCEO) VCEO(sus) MJ10015 MJ10016 Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) ICEV -- -- 0.25 mAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO -- -- 350 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 7 RBSOA See Figure 8 ON CHARACTERISTICS (1) DC Current Gain (IC = 20 Adc, VCE = 5.0 Vdc) (IC = 40 Adc, VCE = 5.0 Vdc) hFE -- 25 10 -- -- -- -- -- -- -- -- 2.2 5.0 Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) VBE(sat) -- -- 2.75 Vdc Vf -- 2.5 5.0 Vdc Cob -- -- 750 pF td -- 0.14 0.3 s tr -- 0.3 1.0 s ts -- 0.8 2.5 s tf -- 0.3 1.0 s tsv -- 1.0 2.5 s tc -- 0.36 1.0 s Diode Forward Voltage (2) (IF = 20 Adc) Vdc DYNAMIC CHARACTERISTIC Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 1 0 Adc, Adc VBE(off) Vdc tp = 25 s BE( ff) = 5 Vdc, Duty Cycle 2%). Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time (IC = 20 A( A(pk), k), Vclam clamp = 250 V, IB1 = 1.0 A, VBE(off) = 5.0 Vdc) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. (2) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. http://onsemi.com 2 MJ10015 MJ10016 TYPICAL CHARACTERISTICS 2.4 2.0 50 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 100 TC = 25C VCE = 5.0 V 20 10 IC/IB = 10 1.6 1.2 TJ = 25C 0.8 TJ = 150C 5.0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) 0.4 50 Figure 1. DC Current Gain 0.5 2.0 5.0 10 IC, COLLECTOR CURRENT (AMP) 1.0 20 50 Figure 2. Collector-Emitter Saturation Voltage 2.8 104 2.4 103 IC, COLLECTOR CURRENT ( A) IC/IB = 10 2.0 TJ = 25C 1.6 1.2 0.8 0.5 TJ = 150C 1.0 2.0 5.0 10 20 TJ = 125C 102 100C 75C 101 100 REVERSE 10-1 -0.2 50 FORWARD 25C 0 +0.2 +0.4 +0.6 IC, COLLECTOR CURRENT (AMP) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Cutoff Region 1500 1000 C ob , OUTPUT CAPACITANCE (pF) V, VOLTAGE (VOLTS) VCE = 250 V TJ = 25C 500 300 200 100 0.4 1.0 100 4.0 10 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Output Capacitance http://onsemi.com 3 400 +0.8 MJ10015 MJ10016 Table 1. Test Conditions for Dynamic Performance VCEO(sus) INPUT CONDITIONS 20 0 VCEX AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INDUCTIVE TEST CIRCUIT TURN-ON TIME 1 1 5V 1 SEE ABOVE FOR DETAILED CONDITIONS CIRCUIT VALUES PW Varied to Attain IC = 100 mA TEST CIRCUITS TUT SEE ABOVE FOR DETAILED CONDITIONS RS = 0.1 TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. IC(pk) t1 t1 t tf t2 VCC VCE or RS = 0.1 Vclamp TIME RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC tf Clamped Lcoil Vclamp VCC = 250 V RL = 12.5 Pulse Width = 25 s OUTPUT WAVEFORMS Rcoil 1N4937 OR EQUIVALENT 2 IB1 adjusted to obtain the forced hFE desired VCC Lcoil = 180 H Rcoil = 0.05 VCC = 20 V INDUCTIVE TEST CIRCUIT 2 IB1 Lcoil Vclamp 2 Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) INPUT Rcoil 1N4937 OR EQUIVALENT INPUT 2 1 TUT t2 t Lcoil (IC ) pk VCC Lcoil (IC TUT 1 ) pk 2 VClamp RL VCC Test Equipment Scope -- Tektronix 475 or Equivalent *Adjust -V such that VBE(off) = 5 V except as required for RBSOA (Figure 8). IC pk 90% Vclamp IC tsv waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: Vclamp 90% IC trv tfi tti tc VCE IB 10% Vclamp 90% IB1 10% IC pk 2% IC TIME PSWT = 1/2 VCC IC (tc) f Figure 6. Inductive Switching Measurements In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed. SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage http://onsemi.com 4 MJ10015 MJ10016 IC, COLLECTOR CURRENT (AMPS) The Safe Operating Area figures shown in Figures 7 and 8 are specified ratings for these devices under the test conditions shown. 50 20 10 5.0 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two Iimitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. 10 s dc 2.0 1.0 0.5 MJ10015 MJ10016 TC = 25C 0.2 0.1 0.05 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.02 0.01 0.005 1.0 2.0 20 500 1000 5.0 10 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area REVERSE BIAS TURN-OFF LOAD LINE BOUNDARY FOR MJ10016 THE LOCUS FOR MJ10015 IS 100 V LESS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the complete RBSOA characteristics. IC, COLLECTOR CURRENT (AMPS) 50 40 30 20 IC 10 IB1 10 VBE(off) = 5.0 V TC = 25C 0 200 300 400 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 500 Figure 8. Reverse Bias Switching Safe Operating Area 10 9 FORWARD BIAS SECOND BREAKDOWN DERATING 80 IB2(pk) , BASE CURRENT (AMP) POWER DERATING FACTOR (%) 100 60 THERMAL DERATING 40 20 8 7 6 IC = 20 A 5 4 3 2 SEE TABLE 1 FOR CONDITIONS, FIGURE 6 FOR WAVESHAPE. 1 0 0 40 80 120 TC, CASE TEMPERATURE (C) 160 0 200 0 1 2 3 4 5 6 7 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 9. Power Derating Figure 10. Typical Reverse Base Current versus VBE(off) With No External Base Resistance http://onsemi.com 5 8 MJ10015 MJ10016 PACKAGE DIMENSIONS TO-204AE (TO-3) CASE 197A-05 ISSUE J A N C -T- E D U SEATING PLANE K 2 PL 0.30 (0.012) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L 2 H G B M T Y 1 -Q- 0.25 (0.010) M http://onsemi.com 6 INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 MJ10015 MJ10016 Notes http://onsemi.com 7 MJ10015 MJ10016 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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