MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 1.0 AMPERE POWER TRANSISTORS PCP SILICON 300-350-400 VOLTS 50 WATTS Features * * * * * http://onsemi.com 300 V to 400 V (Min) - VCEO(sus) 1.0 A Rated Collector Current Popular TO-220 Plastic Package PNP Complements to the TIP47 thru TIP50 Series Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MJE5730 MJE5731 MJE5731A VCEO 300 350 375 Vdc Collector-Base Voltage MJE5730 MJE5731 MJE5731A VCB 300 350 375 Vdc 1 Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC ICM 1.0 3.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25C PD 40 0.32 W W/_C Total Device Dissipation @ TC = 25_C Derate above 25C PD 2.0 0.016 W W/_C Unclamped Inducting Load Energy (See Figure 10) E 20 mJ TJ, Tstg -65 to +150 _C - Continuous - Peak Operating and Storage Junction Temperature Range Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 3.125 _C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 6 3 MARKING DIAGRAM MJE573xG AY WW THERMAL CHARACTERISTICS Characteristics 2 TO-220AB CASE 221A-09 STYLE 1 1 MJE573x = Device Code x = 0, 1, or 1A G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MJE5730/D MJE5730, MJE5731, MJE5731A IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJE5730 MJE5731 MJE5731A VCEO(sus) 300 350 375 - - - Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJE5730 MJE5731 MJE5731A ICEO - - - 1.0 1.0 1.0 mAdc Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) MJE5730 MJE5731 MJE5731A ICES - - - 1.0 1.0 1.0 mAdc IEBO - 1.0 mAdc 30 10 150 - - Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) - 1.0 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) - 1.5 Vdc Current Gain - Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 - MHz Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 - - DYNAMIC CHARACTERISTICS 200 hFE, DC CURRENT GAIN 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. VCE = 10 V TJ = 150C 50 25C 30 -55C 20 10 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 1.4 1.2 1 TJ = 25C 0.8 0.6 -55C 0.4 150C 0.2 VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 Figure 1. DC Current Gain 0.05 0.1 0.5 0.2 0.3 IC, COLLECTOR CURRENT (AMPS) Figure 2. Collector-Emitter Saturation Voltage 1.0 1.4 SECOND BREAKDOWN DERATING 1.2 0.8 DERATING FACTOR TJ = - 55C 1.0 V, VOLTAGE (V) 1.0 VBE(sat) @ IC/IB = 5.0 0.8 25C 0.6 150C 0.4 0.6 THERMAL DERATING 0.4 0.2 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 0 2.0 0 Figure 3. Base-Emitter Voltage 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 Figure 4. Normalized Power Derating http://onsemi.com 2 2.0 MJE5730, MJE5731, MJE5731A There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 100 ms 1.0ms 1.0 500 ms dc TC = 25C 0.5 0.2 0.1 0.05 0.02 0.01 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJE5730 MJE5731 MJE5732 50 200 300 10 20 30 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Forward Bias Safe Operating Area 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 0.02 0.03 0.01 0.02 P(pk) RqJC(t) = r(t) RqJC RqJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 Figure 6. Thermal Response TURN-ON PULSE t1 VBE(off) 0V Vin VCC AP PROX. -11 V t2 RC SCOPE t1 7.0 ns 100 t2 < 500 ms t3 < 15 ns RB Vin t3 51 APPROX. +9.0 V DUTY CYCLE 2.0% TURN-OFF PULSE Figure 7. Switching Time Equivalent Circuit http://onsemi.com 3 Cjd << Ceb +4.0 V 1k MJE5730, MJE5731, MJE5731A 5.0 1.0 2.0 tf td 0.2 t, TIME (s) t, TIME (s) 0.3 TJ = 25C VCC = 200 V IC/IB = 5.0 ts 3.0 TJ = 25C VCC = 200 V IC/IB = 5.0 tr 0.5 0.1 0.05 1.0 0.5 0.3 0.2 0.03 0.1 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 0.05 0.02 0.03 2.0 Figure 8. Turn-On Resistive Switching Times 0.05 Voltage and Current Waveforms VCE MONITOR RBB1 = 150 W INPUT VOLTAGE TUT 100 mH + 50 INPUT 50 + VBB1 = 10 V RBB2 = 100 W - VBB2 = 0 0V tw 3 ms (SEE NOTE 1) -5 V 100 ms VCC = 20 V IC MONITOR 0.63 A COLLECTOR CURRENT 0 V RS = 0.1 W VCER COLLECTOR VOLTAGE 10 V VCE(sat) Figure 10. Inductive Load Switching ORDERING INFORMATION Device MJE5730 MJE5730G MJE5731 Package Shipping TO-220 TO-220 (Pb-Free) TO-220 MJE5731G TO-220 (Pb-Free) MJE5731A TO-220 MJE5731AG 1.0 Figure 9. Resistive Turn-Off Switching Times Test Circuit MJE171 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) TO-220 (Pb-Free) http://onsemi.com 4 50 Units / Rail 2.0 MJE5730, MJE5731, MJE5731A PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE5730/D