Bipolar Transistor Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Dimensions Minimum (mm) Maximum (mm) A 4.42 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5 G 1.14 1.40 H 1.20 1.53 K 12.70 - L 1.982 2.082 Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector www.element14.com www.farnell.com www.newark.com Page <1> 29/11/12 V1.0 Bipolar Transistor Absolute Maximum Ratings (Ta = 25C unless specified otherwise) Description Symbol Value Unit Collector Emitter Voltage Vceo 45 V Collector Emitter Voltage Vces 50 Emitter Base Voltage Vebo 5 Collector Current Continuous Ic 800 Collector Current Peak Icm 1000 Base Current Peak Ibm 200 Base Current Continuous Ib 100 Base Current Peak Ibm 200 Power Dissipation at Ta = 25C Derate Above 25C Pd 625 5 mW mW/C Tj, Tstg -65 to +150 C Rth (j-a) 200 C/W Operating and Storage Junction Temperature Range mA Thermal Resistance Junction to Ambient in Free Air Electrical Characteristics (Ta = 25C unless specified otherwise) Description Symbol Test Condition Minimum Maximum Unit Collector Emiiter Voltage Vceo Ic = 1mA, Ir = 0 45 - Collector Emiiter Voltage Vces Ic = 100A, Ie = 0 50 - Emitter Base Voltage Vebo Ie = 10A, Ic = 0 5.0 - Collector Cut off Current Icbo Vcb = 20V, Ie = 0 Vcb = 20V, Ie = 0, Tj = 150C - 100 5 nA A Emitter Cut off Current Iebo Veb = 5V, Ic = 0 - 10 A Collector Emitter Saturation Voltage *Vce (sat) Ic = 500mA, Ib = 50mA - 0.7 Base Emitter On Voltage *Vbe (on) Ic = 500mA, Vce = 1V - 1.2 V V *Pulse Test: Pulse Width 300ms, Duty Cycle 2%. www.element14.com www.farnell.com www.newark.com Page <2> 29/11/12 V1.0 Bipolar Transistor Electrical Characteristics (Ta = 25C unless specified otherwise) Description Symbol Test Condition Minimum Typical Maximum Unit hfe IC = 100mA, VCE = 1V 100 400 - - Transistors Frequency ft IC = 10mA, VCE = 5V, f = 35MHz PNP - 100 - MHz Input Capacitance Cib VBE = 10V, IE = 0, f = 1MHz PNP - 8 - pF DC Current Gain Small Signal Characteristics Specifications Vceo (V) Vcbo Maximum (V) Ic (A) hfe Minimum at Ic = 2mA ft Minimum (MHz) (mW) 45 50 0.8 100 60 625 Ptot Package TO-92 Part Number Table Description Part Number Bipolar Transistor, PNP, -45V TO-92 BC327.25 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 29/11/12 V1.0