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Page <1> V1.029/11/12
Bipolar Transistor
Description:
Silicon Planar Epitaxial Transistors.
General Purpose Transistors Best Suited for use in Driver and Output
Stages of Audio Amplier.
Dimensions Minimum
(mm)
Maximum
(mm)
A 4.42 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5°
G 1.14 1.40
H 1.20 1.53
K 12.70 -
L 1.982 2.082
Dimensions : Millimetres
Pin Conguration:
1. Emitter
2. Base
3. Collector
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Page <2> V1.029/11/12
Bipolar Transistor
Absolute Maximum Ratings (Ta = 25°C unless specied otherwise)
Description Symbol Value Unit
Collector Emitter Voltage Vceo 45 V
Collector Emitter Voltage Vces 50
Emitter Base Voltage Vebo 5
Collector Current Continuous Ic800 mA
Collector Current Peak Icm 1000
Base Current Peak Ibm 200
Base Current Continuous Ib100
Base Current Peak Ibm 200
Power Dissipation at Ta = 25°C
Derate Above 25°C Pd625
5
mW
mW/°C
Operating and Storage Junction Temperature Range Tj, Tstg -65 to +150 °C
Thermal Resistance
Junction to Ambient in Free Air Rth (j-a) 200 °C/W
Electrical Characteristics (Ta = 25°C unless specied otherwise)
Description Symbol Test Condition Minimum Maximum Unit
Collector Emiiter Voltage Vceo Ic = 1mA, Ir = 0 45 -
VCollector Emiiter Voltage Vces Ic = 100µA, Ie = 0 50 -
Emitter Base Voltage Vebo Ie = 10µA, Ic = 0 5.0 -
Collector Cut off Current Icbo Vcb = 20V, Ie = 0
Vcb = 20V, Ie = 0, Tj = 150°C -100
5
nA
µA
Emitter Cut off Current Iebo Veb = 5V, Ic = 0 - 10 µA
Collector Emitter Saturation Voltage *Vce (sat) Ic = 500mA, Ib = 50mA - 0.7
V
Base Emitter On Voltage *Vbe (on) Ic = 500mA, Vce = 1V - 1.2
*Pulse Test: Pulse Width ≤300ms, Duty Cycle ≤2%.
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Page <3> V1.029/11/12
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Electrical Characteristics (Ta = 25°C unless specied otherwise)
Description Symbol Test Condition Minimum Typical Maximum Unit
DC Current Gain hfe IC = 100mA, VCE = 1V 100 400 - -
Small Signal Characteristics
Transistors Frequency ft
IC = 10mA, VCE = 5V,
f = 35MHz
PNP
- 100 - MHz
Input Capacitance Cib
VBE = 10V, IE = 0, f = 1MHz
PNP - 8 - pF
Specications
Vceo
(V)
Vcbo
Maximum (V)
Ic
(A)
hfe
Minimum at
Ic = 2mA
ft
Minimum
(MHz)
Ptot
(mW) Package
45 50 0.8 100 60 625 TO-92
Part Number Table
Description Part Number
Bipolar Transistor, PNP, -45V TO-92 BC327.25
