MX25L2026C 2M-BIT [x 1] CMOS SERIAL FLASH FEATURES GENERAL * Serial Peripheral Interface compatible -- Mode 0 and Mode 3 * 2,097,152 x 1 bit structure * 64 Equal Sectors with 4K byte each - Any Sector can be erased individually * 4 Equal Blocks with 64K byte each - Any Block can be erased individually * Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations * Latch-up protected to 100mA from -1V to Vcc +1V PERFORMANCE * High Performance - Fast access time: 85MHz serial clock and 66MHz serial clock - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - Fast erase time: 60ms(typ.)/sector (4K-byte per sector) ; 1s(typ.) and 2s(max.)/block (64K-byte per block) * Low Power Consumption - Low active read current: 12mA(max.) at 85MHz, 8mA(max.) at 66MHz and 4mA(max.) at 33MHz - Low active programming current: 15mA (max.) - Low active erase current: 15mA (max.) - Low standby current: 10uA (max.) - Deep power-down mode 1uA (typical) * Minimum 100,000 erase/program cycles SOFTWARE FEATURES * Input Data Format - 1-byte Command code * Block Lock protection - The BP0~BP4 status bits define the size of the area to be software protected against Program and Erase instructions * Auto Erase and Auto Program Algorithm - Automatically erases and verifies data at selected sector - Automatically programs and verifies data at selected page by an internal algorithm that automatically times the program pulse widths (Any page to be programed should have page in the erased state first) * Status Register Feature * Electronic Identification - JEDEC 2-byte Device ID - RES command, 1-byte Device ID HARDWARE FEATURES * SCLK Input - Serial clock input * SI Input - Serial Data Input * SO Output - Serial Data Output * WP# pin - Hardware write protection * HOLD# pin - pause the chip without diselecting the chip * PACKAGE - 8-pin SOP (150mil) - All Pb-free devices are RoHS Compliant P/N: PM1476 1 REV. 1.1, JUL. 21, 2009 MX25L2026C GENERAL DESCRIPTION The MX25L2026C is a CMOS 2,097,152 bit serial Flash memory, which is configured as 262,144 x 8 internally. The MX25L2026C feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. The MX25L2026C provide sequential read operation on whole chip. After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the specified page or sector/block locations will be executed. Program command is executed on page (256 bytes) basis, and erase command is executes on chip or sector(4K-bytes) or block(64K-bytes). To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit. When the device is not in operation and CS# is high, it is put in standby mode and draws less than 10uA DC current. The MX25L2026C utilize Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. PIN CONFIGURATIONS PIN DESCRIPTION SYMBOL 8-PIN SOP (150mil) CS# SO WP# GND 1 2 3 4 CS# 8 7 6 5 VCC HOLD# SCLK SI Serial Data Input SO Serial Data Output SCLK 2 Chip Select SI Clock Input VCC Hold, to pause the device without deselecting the device + 3.3V Power Supply GND Ground WP# Write Protection HOLD# P/N: PM1476 DESCRIPTION REV. 1.1, JUL. 21, 2009 MX25L2026C BLOCK DIAGRAM X-Decoder Address Generator Memory Array Page Buffer SI Data Register Y-Decoder SRAM Buffer CS# Mode Logic State Machine WP# SCLK P/N: PM1476 Sense Amplifier Output Buffer HV Generator SO Clock Generator 3 REV. 1.1, JUL. 21, 2009 MX25L2026C DATA PROTECTION The MX25L2026C is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the standby mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise. * Valid command length checking: The command length will be checked whether it is at byte base and completed on byte boundary. * Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before other command to change data. The WEL bit will return to reset stage under following situation: - Power-up - Write Disable (WRDI) command completion - Write Status Register (WRSR) command completion - Page Program (PP) command completion - Sector Erase (SE) command completion - Block Erase (BE) command completion - Chip Erase (CE) command completion * Software Protection Mode (SPM): by using BP0-BP4 bits to set the part of Flash protected from data change. * Hardware Protection Mode (HPM): by using WP# going low to protect the BP0-BP4 bits and SRWD bit from data change. * Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature command (RES). P/N: PM1476 4 REV. 1.1, JUL. 21, 2009 MX25L2026C PROTECTED & UNPROTECTED All of MX25L2026C protection bits, BP0~BP4, default is set to "1" (Protected) after Power-on and Erase/Program process completion. MX25L2026C provides 2 kinds of unprotected methods, General Unprotection & Special Unprotection. Table 1. Name BP0 BP1 BP2 BP3 BP4 Status Register bit 2 bit 3 bit 4 bit 5 bit 6 Address Range 03F000h 03E000h 03C000h 03A000h 000000h Size 03FFFFh 03EFFFh 03DFFFh 03BFFFh 039FFFh 4KB 4KB 8KB 8KB 232KB Method General Unprotection Special Unprotection Note: BP0~BP4 Default set to "1", Protected. General Unprotection General Unprotection is required on the range from address 03A000h to address 03FFFFh area unprotection, BP0~BP3. Firstly, SRWD status bit needs to individual set to 0. Then, set the protected bit to 0, BP0 or BP1 or BP2 or BP3, which range needs to be Programmed/Erased. Finally, do the Program/Erase process. Please refer to Flowchart 1. Special Unprotection Special Unprotection is required on the range from address 000000h to address 039FFFh area unprotection, BP4. Firstly, SRWD status bit needs to individual set to 0. Then, it needs to write 4-command KEY to uplock BP4, command C3/A5/C3/A5 sequence. This KEY command cannot insert any other command in this 4-command KEY period. After KEY command pressed, set the protected bit BP4=0. Finally, do the Program/Erase command. Please refer to Flowchart 2. P/N: PM1476 5 REV. 1.1, JUL. 21, 2009 MX25L2026C HOLD FEATURE HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop the operation of write status register, programming, or erasing in progress. The operation of HOLD requires Chip Select(CS#) keeping low and starts on falling edge of HOLD# pin signal while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not start until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while Serial Clock(SCLK) signal is being low( if Serial Clock signal is not being low, HOLD operation will not end until Serial Clock being low), see Figure 1. Figure 1. Hold Condition Operation CS# SCLK HOLD# Hold Condition (standard) Hold Condition (non-standard) The Serial Data Output (SO) is high impedance, both Serial Data Input (SI) and Serial Clock (SCLK) are don't care during the HOLD operation. If Chip Select (CS#) drives high during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and CS# must be at low. P/N: PM1476 6 REV. 1.1, JUL. 21, 2009 MX25L2026C Table 2. COMMAND DEFINITION COMMAND WREN (write WRDI (write (byte) Enable) disable) 1st 2nd 3rd 4th 5th Action 06 Hex 04 Hex RDID (read identification) 9F Hex RDSR(read WRSR READ (read status (write status data) register) register) 05 Hex 01 Hex 03 Hex AD1 AD2 AD3 sets the reset the output the to read out (WEL) write (WEL) write manufacturer the status enable latch enable latch ID and 2-byte register bit bit device ID COMMAND (byte) SE (Sector Erase) 1st 2nd 3rd 4th 5th Action 20 Hex AD1 AD2 AD3 BE (Block Erase) CE (Chip Erase) PP (Page Program) 52 or D8 Hex 60 or C7 Hex AD1 AD2 AD3 REMS (Read COMMAND Electronic KEY1 (byte) Manufacturer & Device ID) 1st 90 Hex C3 Hex 2nd x 3rd x 4th ADD(1) 5th Action Output the One of key manufacturer command to ID and device set BP4 ID 02 Hex AD1 AD2 AD3 to write new n bytes read values to out until CS# the status goes high register DP(Deep Power Down) B9 Hex RDP (Release from Deep Powerdown) AB Hex Fast Read (fast read data) 0B Hex AD1 AD2 AD3 x RES (Read Electronic ID) AB Hex x x x KEY2 A5 Hex One of key command to set BP4 (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first. (2) It is not recommended to adopt any other code which is not in the above command definition table. P/N: PM1476 7 REV. 1.1, JUL. 21, 2009 MX25L2026C Table 3. Memory Organization "Block (64KB)" "Total Sector" "Sector (4KB)" 1 1 Address Range Protect Status Bit Start End 63 03F000h 03FFFFh BP0 62 03E000h 03EFFFh BP1 61 03D000h 03DFFFh 60 03C000h 03CFFFh 59 03B000h 03BFFFh 58 03A000h 03AFFFh 10 48~57 030000h 039FFFh 2 16 32~47 020000h 02FFFFh 1 16 16~31 010000h 01FFFFh 0 16 0~15 000000h 00FFFFh 3 2 2 P/N: PM1476 8 BP2 BP3 BP4 REV. 1.1, JUL. 21, 2009 MX25L2026C Flowchart 1-- General Unprotection START WREN Command 06h WRSR Command 01h + Data Set SRWD = 0 Write Register Enable WREN Command 06h Yes WRSR Command 01h + Data Set BP0 or BP1 or BP2 or BP3 = 0 Area Unprotected WREN Command 06h Program/Erase Command After Program/Erase Process Completed, All of Protection Bits (BP0~BP4) to be set to 1. (Protected) Command Completed Next Write Command No END P/N: PM1476 9 REV. 1.1, JUL. 21, 2009 MX25L2026C Flowchart 2-- Special Unprotection START WREN Command 06h WRSR Command 01h + Data Set SRWD = 0 Write Status Register Enable Key 1 Command C3h Key 2 Command A5h Key 1 Command C3h Yes This sequential Command (4 Commands) cannot insert any other Process or Command. Key 2 Command A5h WREN Command 06h WRSR Command 01h + Data Set bit 6 (BP4) = 0 For Area Unprotected or Set bit[2:6] (BP0~BP4) = 0 For Unprotected Full Chip WREN Command 06h Program/Erase Command After Program/Erase Process Completed, All of Protection Bits (BP0~BP4) to be set to 1. (Protected) Command Completed Next Write Command No END P/N: PM1476 10 REV. 1.1, JUL. 21, 2009 MX25L2026C DEVICE OPERATION 1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation. 2. When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby mode until next CS# falling edge. In standby mode, SO pin of this LSI should be High-Z. 3. When correct command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until next CS# rising edge. 4. Input data is latched on the rising edge of Serial Clock(SCLK) and data shifts out on the falling edge of SCLK. The difference of Serial mode 0 and mode 3 is shown as Figure 2. 5. For the following instructions: RDID, RDSR, READ, FAST_READ, RES and REMS the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE, CE, PP, RDP and DP the CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. 6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase. Figure 2. Serial Modes Supported CPOL CPHA shift in (Serial mode 0) 0 0 SCLK (Serial mode 3) 1 1 SCLK SI shift out MSB SO MSB Note: CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is supported. P/N: PM1476 11 REV. 1.1, JUL. 21, 2009 MX25L2026C COMMAND DESCRIPTION (1) Write Enable (WREN) The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, SE, BE, CE, and WRSR, which are intended to change the device content, should be set every time after the WREN instruction setting the WEL bit. The sequence of issuing WREN instruction is: CS# goes low-> sending WREN instruction code-> CS# goes high. (see Figure 11) (2) Write Disable (WRDI) The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit. The sequence of issuing WRDI instruction is: CS# goes low-> sending WRDI instruction code-> CS# goes high. (see Figure 12) The WEL bit is reset by following situations: - Power-up - Write Disable (WRDI) instruction completion - Write Status Register (WRSR) instruction completion - Page Program (PP) instruction completion - Sector Erase (SE) instruction completion - Block Erase (BE) instruction completion - Chip Erase (CE) instruction completion (3) Read Identification (RDID) The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The MXIC Manufacturer ID is C2(hex), the memory type ID is 20(hex) as the first-byte device ID, and the individual device ID of second-byte ID is as followings: 12(hex) for MX25L2026C. The sequence of issuing RDID instruction is: CS# goes low-> sending RDID instruction code -> 24-bits ID data out on SO -> to end RDID operation can use CS# to high at any time during data out. (see Figure. 13) While Program/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage. P/N: PM1476 12 REV. 1.1, JUL. 21, 2009 MX25L2026C (4) Read Status Register (RDSR) The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in program/erase/write status register condition) and continuously. It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is in progress. The sequence of issuing RDSR instruction is: CS# goes low-> sending RDSR instruction code-> Status Register data out on SO (see Figure. 14) The definition of the status register bits is as below: WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/ erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device will not accept program/erase/write status register instruction. BP0~BP4 bits. The Block Protect (BP0~BP4) bits, volatile bits, indicate the protected area(as defined in table 1) of the device to against the program/erase instruction without hardware protection mode being set. To write the Block Protect (BP0~BP4) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE), Block Erase (BE) and Chip Erase(CE) instructions (only if all Block Protect bits set to 0, the CE instruction can be executed) SRWD bit. The Status Register Write Disable (SRWD) bit, volatile bit, is operated together with Write Protection (WP#) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and WP# pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is no longer accepted for execution and the SRWD bit and Block Protect bits (BP0~BP4) are read only. bit 7 SRWD Status Register Write Protect bit 6 BP4 Protected Area bit 5 bit 4 bit 3 bit 2 BP3 BP2 BP1 BP0 1= status register write disable (note 2) (note 1) (note 1) (note 1) (note 1) (note 1) bit 1 bit 0 WEL (write WIP (write in enable latch) progress bit) 1=write 1=write enable operation 0=not write 0=not in write enable operation Note: 1. See the table "Protected Area Sizes". The (BP0~BP4) default values are "1" (protected). 2. The SRWD default value is "1". P/N: PM1476 13 REV. 1.1, JUL. 21, 2009 MX25L2026C (5) Write Status Register (WRSR) The WRSR instruction is for changing the values of Status Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP0~BP4) bits to define the protected area of memory (as shown in table 1). The WRSR also can set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#) pin signal. The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered. The sequence of issuing WRSR instruction is: CS# goes low-> sending WRSR instruction code-> Status Register data on SI-> CS# goes high. (see Figure 15) The WRSR instruction has no effect on b1, b0 of the status register. The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register cycle is completed, and the Write Enable Latch (WEL) bit is reset. Table 4. Protection Modes WP# Signal SRWD bit KEY Mode 1 0 0 Software Protect 1 0 1 1 1 X 0 0 X 0 1 X Write Protection of Status Register Memory Content Protected Area Unprotected Area Protect against page program, chip erase and sector/erase block NA Status Register are Protect against page Ready to accept Page Writable (except BP4) program, chip erase program, chip erase All Status Register are and sector/erase block and sector/erase block Software Protect Writable Only Status Register Protect against page Software Protect SRWD is writable program, chip erase NA other register can't and sector/erase block Hardware Protect Status Register are not Writable Note: 1. It is defined by the values in the Protect Status bits (BP0~BP4) of the Status Register, as shown in Table 1. As the table above, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode (HPM): Software Protected Mode (SPM) (when WP# = high): - When SRWD bit=0, and WP# is high, the WREN instruction may set the WEL bit and can change the values of SRWD or BP0~BP4=0. The protected area, which is defined by BP0~BP4, is at Software Protected Mode (SPM). - When SRWD bit=1 and WP# is high, the WREN instruction may set the WEL bit, which can change the values of SRWD. After setting SRWD bit=0, BP0~BP4 can be changed to 0. - Please refer to Flowchart 1 and 2 for the process flow of changing BP0~BP4 as 0. - KEY is a 4 command flow. In this flow period, any other process can not be accessed, otherwise KEY will not be set to 1. KEY is a special protection for BP4 area. Hardware Protected Mode (HPM) (when WP# = low): - HPM protect the Status Register from being changed. If WP# = low, the Status Register can't be changed. - Exit the HPM just by changing WP# to high. P/N: PM1476 14 REV. 1.1, JUL. 21, 2009 MX25L2026C (6) Read Data Bytes (READ) The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing READ instruction is: CS# goes low-> sending READ instruction code-> 3-byte address on SI-> data out on SO-> to end READ operation can use CS# to high at any time during data out. (see Figure. 16) (7) Read Data Bytes at Higher Speed (FAST_READ) The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing FAST_READ instruction is: CS# goes low-> sending FAST_READ instruction code-> 3-byte address on SI-> 1-dummy byte address on SI->data out on SO-> to end FAST_READ operation can use CS# to high at any time during data out. (see Figure. 17) While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. (8) Sector Erase (SE) The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address of the sector (see table 3) is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. Address bits [Am-A12] (Am is the most significant address) select the sector address. The sequence of issuing SE instruction is: CS# goes low -> sending SE instruction code-> 3-byte address on SI -> CS# goes high. (see Figure 19) The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the page is protected by BP0~BP4 bits, the Sector Erase (SE) instruction will not be executed on the page. If the proccess range covers or crosses address 000000h to address 039FFFh area, please use special unprotection method to unprotect the protected bits BP0~BP4. See the Flowchart 2. P/N: PM1476 15 REV. 1.1, JUL. 21, 2009 MX25L2026C (9) Block Erase (BE) The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (see table 3) is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing BE instruction is: CS# goes low -> sending BE instruction code-> 3-byte address on SI -> CS# goes high. (see Figure 20) The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the page is protected by BP0~BP4 bits, the Block Erase (BE) instruction will not be executed on the page. If the proccess range covers or crosses address 000000h to address 039FFFh area, please use special unprotection method to unprotect the protected bits BP0~BP4. See the Flowchart 2. (10) Chip Erase (CE) The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). Any address of the sector (see table 3) is a valid address for Chip Erase (CE) instruction. The CS# must go high exactly at the byte boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing CE instruction is: CS# goes low-> sending CE instruction code-> CS# goes high. (see Figure 20) The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Chip Erase cycle is in progress. The WIP sets 1 during the tCE timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the chip is protected by BP0~BP4 bits, the Chip Erase (CE) instruction will not be executed. It will be only executed when BP0~BP4 all set to "0". Please use special unprotection method to set BP0~BP4 to 0, see the Flow chart 2. (11) Page Program (PP) The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). If the eight least significant address bits (A7-A0) are not all 0, all transmitted data which goes beyond the end of the current page are programmed from the start address if the same page (from the address whose 8 least significant address bits (A7A0) are all 0). The CS# must keep during the whole Page Program cycle. The CS# must go high exactly at the byte boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. If more than 256 bytes are sent to the device, the data of the last 256-byte is programmed at the request page and previous data will be disregarded. If less than 256 bytes are sent to the device, the data is programmed at the request address of the page without effect on other address of the same page. The sequence of issuing PP instruction is: CS# goes low-> sending PP instruction code-> 3-byte address on SI-> at P/N: PM1476 16 REV. 1.1, JUL. 21, 2009 MX25L2026C least 1-byte on data on SI-> CS# goes high. (see Figure 18) The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Page Program cycle is in progress. The WIP sets 1 during the tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the page is protected by BP1, BP0 bits, the Page Program (PP) instruction will not be executed. If the proccess range covers or crosses address 000000h to address 039FFFh area, please use special unprotection method to unprotect the protected bits BP0~BP4. See the Flowchart 2. (12) Deep Power-down (DP) The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to entering the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in standby mode not deep power-down mode. It's different from Standby mode. The sequence of issuing DP instruction is: CS# goes low-> sending DP instruction code-> CS# goes high. (see Figure 22) Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP) and Read Electronic Signature (RES) instruction. (RES instruction to allow the ID been read out). When Powerdown, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. For RDP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode and reducing the current to ISB2. (13) Release from Deep Power-down (RDP), Read Electronic Signature (RES) The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High. When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2(max), as specified in Table 6. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as table of ID Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new deisng, please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/ write cycle in progress. The sequence is shown as Figure 23,24. The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction. P/N: PM1476 17 REV. 1.1, JUL. 21, 2009 MX25L2026C The RDP instruction is for releasing from Deep Power Down Mode. (14) Read Electronic Manufacturer ID & Device ID (REMS) The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID. The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for MXIC (C2h) and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in figure 25. The Device ID values are listed in Table of ID Definitions on page 16. If the one-byte address is initially set to 01h, then the device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS# high. Table of ID Definitions: RDID Command manufacturer ID C2 memory type 20 electronic ID 03 device ID 03 RES Command REMS Command P/N: PM1476 manufacturer ID C2 18 memory density 12 REV. 1.1, JUL. 21, 2009 MX25L2026C POWER-ON STATE The device is at below states when power-up: - Standby mode ( please note it is not deep power-down mode) - Write Enable Latch (WEL) bit is reset The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level: - VCC minimum at power-up stage and then after a delay of tVSL - GND at power-down Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level. An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change during power up state. For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The read, write, erase, and program command should be sent after the below time delay: - tVSL after VCC reached VCC minimum level The device can accept read command after VCC reached VCC minimum and a time delay of tVSL. Please refer to the figure of "power-up timing". Note: - To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended.(generally around 0.1uF) P/N: PM1476 19 REV. 1.1, JUL. 21, 2009 MX25L2026C ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS RATING VALUE Industrial grade Ambient Operating Temperature Storage Temperature -40C to 85C -55C to 125C Applied Input Voltage -0.5V to 4.6V Applied Output Voltage -0.5V to 4.6V VCC to Ground Potential -0.5V to 4.6V NOTICE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot to 4.6V or -0.5V for period up to 20ns. 4. All input and output pins may overshoot to VCC+0.5V while VCC+0.5V is smaller than or equal to 4.6V. Figure 4. Maximum Positive Overshoot Waveform Figure 3.Maximum Negative Overshoot Waveform 20ns 4.6V 0V 3.6V -0.5V 20ns CAPACITANCE TA = 25C, f = 1.0 MHz SYMBOL PARAMETER CIN COUT P/N: PM1476 MIN. TYP MAX. UNIT Input Capacitance 6 pF VIN = 0V Output Capacitance 8 pF VOUT = 0V 20 CONDITIONS REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL Input timing referance level 0.8VCC 0.7VCC 0.2VCC 0.3VCC Output timing referance level AC Measurement Level 0.5VCC Note: Input pulse rise and fall time are <5ns Figure 6. OUTPUT LOADING DEVICE UNDER TEST 2.7K ohm CL 6.2K ohm +3.3V DIODES=IN3064 OR EQUIVALENT CL=30pF Including jig capacitance (CL=15pF Including jig capacitance for 70MHz & 85MHz) P/N: PM1476 21 REV. 1.1, JUL. 21, 2009 MX25L2026C Table 5. DC CHARACTERISTICS (Temperature = -40C to 85C for Industrial grade, VCC = 2.7V ~ 3.6V) SYMBOL PARAMETER NOTES MIN. TYP. MAX. UNITS TEST CONDITIONS ILI Input Load Current 1 2 uA ILO Output Leakage Current 1 2 uA ISB1 VCC Standby Current 1 10 uA ISB2 Deep Power-down Current 10 uA 12 mA f=85MHz & 70MHz, SCLK=0.1VCC/0.9VCC, SO=Open 8 mA f=66MHz, SCLK=0.1VCC/0.9VCC, SO=Open 4 mA f=33MHz, SCLK=0.1VCC/0.9VCC, SO=Open 15 mA 15 mA 1 15 mA 1 15 mA -0.5 0.3VCC V 0.7VCC VCC+0.4 V 0.4 V IOL = 1.6mA V IOH = -100uA ICC1 VCC Read VIL VCC Program Current (PP) VCC Write Status Register (WRSR) Current VCC Sector Erase Current (SE) VCC Chip Erase Current (CE) Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage VWI Low VCC Write Inhibit Voltage ICC2 ICC3 ICC4 ICC5 1 1 VCC-0.2 3 2.1 2.3 2.5 VCC = VCC Max, VIN = VCC or GND VCC = VCC Max, VIN = VCC or GND VIN = VCC or GND, CS# = VCC VIN = VCC or GND, CS# = VCC Program in Progress, CS# = VCC Program status register in progress, CS#=VCC Erase in Progress, CS#=VCC Erase in Progress, CS#=VCC V Notes : 1. Typical values at VCC = 3.3V, T = 25C. These currents are valid for all product versions (package and speeds). 2. Typical value is calculated by simulation. 3. Not 100% tested. P/N: PM1476 22 REV. 1.1, JUL. 21, 2009 MX25L2026C Table 6. AC CHARACTERISTICS (Temperature = -40C to 85C for Industrial grade, VCC = 2.7V ~ 3.6V) Symbol Alt. fSCLK fC fRSCLK fR tCH(1) tCLH tCL(1) tCLL tCLCH(2) tCHCL(2) tSLCH tCSS tCHSL tDVCH tDSU tCHDX tDH tCHSH tSHCH tSHSL tCSH tSHQZ(2) tDIS tCLQV tV tCLQX tHLCH tCHHH tHHCH tCHHL tHHQX(2) tHLQZ(2) tWHSL(4) tSHWL(4) tDP(2) tHO tRES1(2) tRES2(2) tW tPP tSE tBE tCE tLZ tHZ Parameter Clock Frequency for the following instructions: FAST_READ, PP, SE, BE, CE, DP, RES,RDP, WREN, WRDI, RDID, RDSR, WRSR Clock Frequency for READ instructions @33MHz Clock High Time @85MHz @33MHz Clock Low Time @85MHz Clock Rise Time (3) (peak to peak) Clock Fall Time (3) (peak to peak) CS# Active Setup Time (relative to SCLK) CS# Not Active Hold Time (relative to SCLK) Data In Setup Time Data In Hold Time CS# Active Hold Time (relative to SCLK) CS# Not Active Setup Time (relative to SCLK) CS# Deselect Time Output Disable Time 30pF Clock Low to Output Valid 15pF Output Hold Time HOLD# Setup Time (relative to SCLK) HOLD# Hold Time (relative to SCLK) HOLD Setup Time (relative to SCLK) HOLD Hold Time (relative to SCLK) HOLD to Output Low-Z HOLD# to Output High-Z Write Protect Setup Time Write Protect Hold Time CS# High to Deep Power-down Mode CS# High to Standby Mode without Electronic Signature Read CS# High to Standby Mode with Electronic Signature Read Write Status Register Cycle Time Page Program Cycle Time Sector Erase Cycle Time Block Erase Cycle Time Chip Erase Cycle Time Min. Typ. Max. Unit D.C. 85 MHz D.C. 15 5.5 15 5.5 0.1 0.1 5 5 2 5 5 5 100 33 3 MHz ns ns ns ns V/ns V/ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns us 3 us 1.8 us 15 5 ms ms ms s s 6 8 6 0 5 5 5 5 6 6 20 100 5 1.4 60 1 1.8 2 3.8 Note: 1. tCH + tCL must be greater than or equal to 1/ fC 2. Value guaranteed by characterization, not 100% tested in production. 3. Expressed as a slew-rate. 4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 5. Test condition is shown as Figure 3. P/N: PM1476 23 REV. 1.1, JUL. 21, 2009 MX25L2026C Table 7. Power-Up Timing Symbol Parameter tVSL(1) VCC(min) to CS# low Min. 10 Max. Unit us Note: 1. The parameter is characterized only. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). P/N: PM1476 24 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 7. Serial Input Timing tSHSL CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX tCLCH LSB MSB SI High-Z SO Figure 8. Output Timing CS# tCH SCLK tCLQV tCL tCLQV tSHQZ tCLQX LSB SO tQLQH tQHQL SI P/N: PM1476 ADDR.LSB IN 25 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 9. Hold Timing CS# tHLCH tCHHL tHHCH SCLK tCHHH tHLQZ tHHQX SO HOLD# * SI is "don't care" during HOLD operation. Figure 10. WP# Disable Setup and Hold Timing during WRSR when SRWD=1 WP# tSHWL tWHSL CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK 01 SI SO P/N: PM1476 High-Z 26 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 11. Write Enable (WREN) Sequence (Command 06) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 06 High-Z SO Figure 12. Write Disable (WRDI) Sequence (Command 04) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 04 High-Z SO Figure 13. Read Identification (RDID) Sequence (Command 9F) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 28 29 30 31 SCLK Command SI 9F Manufacturer Identification SO High-Z 7 6 5 3 MSB P/N: PM1476 2 1 Device Identification 0 15 14 13 3 2 1 0 MSB 27 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 14. Read Status Register (RDSR) Sequence (Command 05) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 05 SI Status Register Out High-Z SO 7 6 5 4 3 2 Status Register Out 1 0 7 6 5 4 3 2 1 7 0 MSB MSB Figure 15. Write Status Register (WRSR) Sequence (Command 01) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command SI Status Register In 01 7 5 4 3 2 1 0 MSB High-Z SO 6 Figure 16. Read Data Bytes (READ) Sequence (Command 03) CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK command SI 03 24-Bit Address 23 22 21 3 2 1 0 MSB Data Out 1 High-Z 7 SO 6 5 4 3 2 Data Out 2 1 0 7 MSB P/N: PM1476 28 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 17. Read at Higher Speed (FAST_READ) Sequence (Command 0B) CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24 BIT ADDRESS 23 22 21 0B 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 P/N: PM1476 4 3 2 1 0 7 MSB MSB 29 6 5 4 3 2 1 0 7 MSB REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 18. Page Program (PP) Sequence (Command 02) CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command 24-Bit Address 23 22 21 02 SI 3 2 Data Byte 1 1 0 7 6 5 4 3 2 0 1 MSB MSB 2078 2079 2077 2076 2075 2074 2073 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 CS# 1 0 SCLK Data Byte 2 SI 7 6 MSB P/N: PM1476 5 4 3 2 Data Byte 3 1 0 7 6 5 4 MSB 3 2 Data Byte 256 1 0 7 6 5 4 3 2 MSB 30 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 19. Sector Erase (SE) Sequence (Command 20) CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK 24 Bit Address Command SI 7 20 6 2 1 0 MSB Note: SE command is 20(hex). Figure 20. Block Erase (BE) Sequence (Command 52 or D8) CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 24 Bit Address 23 22 52 or D8 2 1 0 MSB Note: BE command is 52 or D8(hex). P/N: PM1476 31 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 21. Chip Erase (CE) Sequence (Command 60 or C7) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 60 or C7 Note: CE command is 60(hex) or C7(hex). Figure 22. Deep Power-down (DP) Sequence (Command B9) CS# 0 1 2 3 4 5 6 tDP 7 SCLK Command B9 SI Deep Power-down Mode Stand-by Mode Figure 23. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB) CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 SCLK Command SI AB tRES2 3 Dummy Bytes 23 22 21 3 2 1 0 MSB Electronic Signature Out High-Z 7 SO 6 5 4 3 2 1 0 MSB Deep Power-down Mode P/N: PM1476 32 Stand-by Mode REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 24. Release from Deep Power-down (RDP) Sequence (Command AB) CS# 0 1 2 3 4 5 6 tRES1 7 SCLK Command SI AB High-Z SO Deep Power-down Mode Stand-by Mode Figure 25. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90) CS# 0 1 2 3 4 5 6 7 8 9 10 SCLK Command SI 2 Dummy Bytes 15 14 13 90 3 2 1 0 High-Z SO CS# 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK ADD (1) SI 7 6 5 4 3 2 1 0 Manufacturer ID SO X 7 6 5 4 3 2 1 Device ID 0 7 6 5 4 3 2 1 MSB MSB 0 7 MSB Notes: (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first P/N: PM1476 33 REV. 1.1, JUL. 21, 2009 MX25L2026C Figure 26. Power-up Timing VCC VCC(max) Chip Selection is Not Allowed VCC(min) tVSL Device is fully accessible time P/N: PM1476 34 REV. 1.1, JUL. 21, 2009 MX25L2026C RECOMMENDED OPERATING CONDITIONS At Device Power-Up AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate correctly. VCC(min) VCC GND tSHSL tVR CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX tCLCH LSB IN MSB IN SI High Impedance SO Figure A. AC Timing at Device Power-Up Symbol Parameter tVR VCC Rise Time Notes Min. Max. Unit 1 0.5 500000 us/V Notes : 1. Sampled, not 100% tested. 2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to "AC CHARACTERISTICS" table. P/N: PM1476 35 REV. 1.1, JUL. 21, 2009 MX25L2026C ERASE AND PROGRAMMING PERFORMANCE PARAMETER Write Status Register Cycle Time Sector erase Time Block erase Time Chip Erase Time Page Program Time Erase/Program Cycle Min. TYP. (1) 5 60 1 1.8 1.4 Max. (2) 15 2 3.8 5 100,000 UNIT ms ms s s ms cycles Note: 1. Typical program and erase time assumes the following conditions: 25C, 3.3V, and checker board pattern. 2. Under worst conditions of 85C and 2.7V. 3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command. LATCH-UP CHARACTERISTICS Input Voltage with respect to GND on ACC Input Voltage with respect to GND on all power pins, SI, CS# Input Voltage with respect to GND on SO Current Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time. P/N: PM1476 36 MIN. -1.0V -1.0V -1.0V -100mA MAX. 12.5V 2 VCCmax VCC + 1.0V +100mA REV. 1.1, JUL. 21, 2009 MX25L2026C ORDERING INFORMATION PART NO. MX25L2026CMI-12G P/N: PM1476 CLOCK (MHz) Operating Current Max. (mA) Standby Current Max. (uA) Temperature PACKAGE Remark 85 12 10 -40~85C 8-SOP (150mil) Pb-free 37 REV. 1.1, JUL. 21, 2009 MX25L2026C PART NAME DESCRIPTION MX 25 L 2026C M I 12 G OPTION: G: Pb-free SPEED: 12: 85MHz TEMPERATURE RANGE: I: Industrial (-40C to 85C) PACKAGE: M: 150mil 8-SOP DENSITY & MODE: 2026C: 2Mb TYPE: L: 3V DEVICE: 25: Serial Flash P/N: PM1476 38 REV. 1.1, JUL. 21, 2009 MX25L2026C PACKAGE INFORMATION P/N: PM1476 39 REV. 1.1, JUL. 21, 2009 MX25L2026C REVISION HISTORY Revision No. Description 1.0 1. Removed "Preliminary" title 2. Added "Low Vcc write inhibit" voltage (VWI) parameter 1.1 1. Removed the loading description of fSCLK 2. Removed Sector Erase maximum timing P/N: PM1476 40 Page P1 P22 P23 P1,23,36 Date MAY/14/2009 JUL/21/2009 REV. 1.1, JUL. 21, 2009 MX25L2026C Macronix's products are not designed, manufactured, or intended for use for any high risk applications in which the failure of a single component could cause death, personal injury, severe physical damage, or other substantial harm to persons or property, such as life-support systems, high temperature automotive, medical, aircraft and military application. Macronix and its suppliers will not be liable to you and/or any third party for any claims, injuries or damages that may be incurred due to use of Macronix's products in the prohibited applications. Copyright(c) Macronix International Co., Ltd. 2009. All Rights Reserved. Macronix, MXIC, MXIC Logo, MX Logo, are trademarks or registered trademarks of Macronix International Co., Ltd.. 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