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File Number 4564.4
HS-4423RH, HS-4423BRH
Radiation Hardened Dual, Inverting Power
MOSFET Drivers
The Radiation Hardened HS-4423RH and the HS-4423BRH
are inverting, dual, monolithic high-speed MOSFET drivers
designed to convert TTL level signals into high current
outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of
high gate capacitance power MOSFETs, like our Rad Hard
FS055, in high frequency applications.
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate
capacitance. The output stage incorporates a low voltage
lock-out circuit that puts the outputs into a three-state mode
when the supply voltage drops below 10V for the
HS-4423RH and 7.5V for the HS-4423BRH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99511. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
HS-4423RH, HS-4423BRH (FLATPACK CDFP4-F16)
TOP VIEW
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-
bonded to their same electrical points on the die.
Features
• Electrically Screened to DESC SMD # 5962-99511
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose (Max). . . . . . . . . . . . . . . . . .3 x 105 RAD(SI)
- Latch-Up Immune
- Low Dose Rate Immune
•I
PEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Typ)
• Matched Rise and F all Times (CL = 4300pF) . . . 75ns (Max)
• Low Voltage Lock-Out Feature
- HS-4423RH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <10.0V
- HS-4423BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <7.5V
• Wide Supply Voltage Range. . . . . . . . . . . . . . .12V to 18V
• Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (Max)
• Consistent Delay Times with VCC Changes
• Low Power Consumption
- 40mW with Inputs High
- 20mW with Inputs Low
• Low Equivalent Input Capacitance. . . . . . . . . .3.2pF (Typ)
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4000V
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
NC
IN A
NC
GND A
GND B
NC
IN B
NC
2
3
4
5
6
7
8
116
15
14
13
12
11
10
9
NC
OUT A
OUT A
VCC
VCC
OUT B
OUT B
NC
Ordering Information
ORDERING NUMBER INTERNAL
MKT. NUMBER TEMP. RANGE
(oC)
5962F9951101VXC HS9-4423RH-Q -55 to 125
5962F9951101QXC HS9-4423RH-8 -55 to 125
HS9-4423RH/Proto HS9-4423RH/Proto -55 to 125
5962F9951102VXC HS9-4423BRH-Q -55 to 125
5962F9951102QXC HS9-4423BRH-8 -55 to 125
HS9-4423BRH/Proto HS9-4423BRH/Proto -55 to 125
Data Sheet June 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 1999
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4890µm x 3370µm (193 mils x 133 mils)
Thickness: 483µm± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
125
Metallization Mask Layout HS-4423RH, HS-4423BRH
GND (5)
IN B (7)
OUT B (10)
OUT B (11)
VCC (12) VCC (13)
GND (4)
IN A (2)
OUT A (15)
OUT A (14)
HS-4423RH, HS-4423BRH
HS-4423RH
Printer Friendly Version
Rad-Hard Dual, Inverting Power MOSFET Drivers
Datasheets,
Related Docs
& Simulations
Description
Key
Features
Parametric
Data
Application
Diagrams
Related
Devices
Ordering Information
Part No.
Design-
In
Status
Temp.
Package
MSL
SMD
Price
US $
HS0-4423RH-Q
Active
Mil
Die (Military
Visual)
N/A
-
Contact
Us
HS9-4423BRH-8
Active
-
16 Ld FlatPack
N/A
5962F9951102QXC
Contact
Us
HS9-4423BRH-
Q
Active
-
16 Ld FlatPack
N/A
5962F9951102VXC
Contact
Us
HS9-4423RH-8
Active
-
16 Ld FlatPack
N/A
5962F9951101QXC
Contact
Us
HS9-4423RH-Q
Active
-
16 Ld FlatPack
N/A
5962F9951101VXC
Contact
Us
HS9-4423BRH-T
InActive
-
16 Ld FlatPack
N/A
5962R9951102TXC
Contact
Us
HS9-4423RH-T
InActive
-
16 Ld FlatPack
N/A
5962F9951101TXC
Contact
Us
The price listed is the manufacturer's suggested retail price for quantities between 100 and
999 units. However, prices in today's market are fluid and may change without notice.
MSL = Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD = Standard Microcircuit Drawing
Description
The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-
speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages
up to 18V.
The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH
PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high
current outputs allow very quick control of high gate capacitance power MOSFETs, like our Rad
Hard FS055, in high frequency applications.
The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging
the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the
outputs into a three-state mode when the supply voltage drops below 10V for the HS-4423RH and
7.5V for the HS-4423BRH.
Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process,
these devices are immune to Single Event Latch-up and have been specifically designed to provide
highly reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus
(DSCC). The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-99511. A “hot-link”
is provided on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Key Features
Electrically Screened to DESC SMD # 5962-99511
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
Total Dose (Max) 3 x 105 RAD(SI)
Latch-Up Immune
Low Dose Rate Immune
IPEAK >2A (Ty p)
Matched Rise and Fall Times (CL = 4300pF) . . . 75ns (Max)
Low Voltage Lock-Out Feature
HS-4423RH <10.0V
HS-4423BRH <7.5V
Wide Supply Voltage Range 12V to 18V
Prop Delay 250ns (Max)
Consistent Delay Times with VCC Changes
Low Power Consumption
40mW with Inputs High
20mW with Inputs Low
Low Equiv alent Input Capacitance 3.2pF (Ty p)
ESD Protected 4000V
Related Documentation
Datasheet(s):
Radiation Hardened Dual, Inverting Power MOSFET Drivers
Military SMD(s):
Radiation Hardened Dual Inverting Power MOSFET Driver
Technical Homepage:
Military/Space ICs
Parametric Data
RH Level
300
Application Block Diagrams
Satellite Power Management
Applications
Switching Power Supplies
DC/DC Converters
Motor Controllers
Related Devices
Parametric Table
HS-4424BRH
Rad-Hard Dual, Non-Inverting Power MOSFET Drivers
HS-4424RH
Rad-Hard Dual, Non-Inverting Power MOSFET Drivers
IS-1715ARH
Rad-Hard Complementary Switch FET Driver
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