Rev.2.00 Feb 22, 2007 page 1 of 4
RKD750KP
Silicon Schottky Barrier Diode for Detector REJ03G1460-0200
Rev.2.00
Feb 22, 2007
Features
• Low forward voltage, Low capacitance and High detection sensitivity.
• Halogen free, Environmental friendly Package include Conformity to RoHS Directive.
• Ultra small Package (0.6mm×0.3mm Size leadless type).
Ordering Information
Part No. Laser Mark Package Name Package Code
RKD750KP A MP6 PXSN0002ZB-A
Pin Arrangement
Cathode mark
Mark
12
A
1. Cathode
2. Anode
RKD750KP
Rev.2.00 Feb 22, 2007 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Reverse voltage VR 2 V
Average rectified current IO 5 mA
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
VF1 — — 0.15 IF = 0.1 mA Forward voltage VF2 — — 0.27
V IF = 1 mA
Capacitance C — 0.3 — pF VR = 0.5 V, f = 1 MHz
ESD-Capability *1 — 10 — — V C = 200 pF, RL = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V
2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
RKD750KP
Rev.2.00 Feb 22, 2007 page 3 of 4
Main Characteristic
0 0.2 0.40.30.1
10
1.0
0.1
Reverse voltage V
R
(V)
Fig.3 Capacitance vs. Reverse voltage
10
–3
10
–5
10
–2
10
–4
10
–6
0.5
Capacitance C (pF)
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
0.1 1.0 10
Forward current I
F
(A)
02431
10
–3
10
–5
10
–2
10
–4
10
–6
5
Reverse voltage V
R
(V)
Reverse current I
R
(A)
Ta = 25°C
Ta = 75°C
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
RKD750KP
Rev.2.00 Feb 22, 2007 page 4 of 4
Package Dimensions
Min Nom Max
b0.25 0.27
D0.29 0.32
E0.59 0.62 0.65
L0.17 0.19 0.21
0.35
0.29
A0.27 0.30 0.33
Dimension in Millimeters
Reference
Symbol
0.00015g
MASS[Typ.]
MP6V
PXSN0002ZB-A
RENESAS CodeJEITA Package Code Previous Code
Package Name
MP6
D
b
E
L
L
A
b1 0.31
e1 0.38
l
1
0.23
Pattern of terminal position areas
e1
b1
l1
l1
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