G@ HARRIS August 1991 2N6849 Avalanche-Energy-Rated P-Channel Power MOSFETs Features -6.5A, -100V * 'DS(on) = 0.302 Single Pulse Avalanche Energy Rated SOA is Power-Dissipation Limited Nanosecond Switching Speeds e Linear Transfer Characteristics High Input Impedance Description The 2N6849 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This is a p-channel enhancement- mode silicon-gate power field-effect transistor designed for Package TO-205AF BOTTOM VIEW SOURCE GATE (J (2) (>) DRAIN (CASE) Terminal Diagram P-CHANNEL ENHANCEMENT MODE applications such as switching regulators, switching converters, D motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. This type can be operated directly from integrated circuits. The 2N6849 is supplied in the JEDEC TO-205AF (Low Profile G TO-39) metal package. Ss Absolute Maximum Ratings (Tc = +259C) Unless Otherwise Specified 2N6849 UNITS Drain-Source Voltage 0.0... ccc cece cece creer teen nen en tne ~-100* Vv Drain~Gate Voltage (Rag = 20k) -100* v Continuous Drain Current Te = +2596 0 cece eee t et nee tear ene ~6.5* A To =+100C . -4.1* A Pulsed Drain Current (Note 2) ............ -25* A Gate-Source Voltage ....... ccc cece cece cece een eneeetes +20* Vv Maximum Power Dissipation To = +259C (See Figure 14)... cence cee ene ee ee nen ee Pp 25* Ww Above Tc = +259C, Derate Linearly (See Figure 14) ..............e eee 0,2* WAG Single Pulse Avalanche Energy (Note 3) ...... 2.0.50. cece sere cerns Eas 500 mJ Operating and Storage Junction Temperature Range............ Ty TSTG -55 to +150* o Maximum Lead Temperature for Soldering ............c..ecee eeu eeues TL 300 oC (0.063 (1.6mm) from case for 10s) NOTES: *JEDEC registered values 1. Pulse Test: Pulse width < 300us, Duty Cycle < 2% 2. Repetitive Rating: Pulse width limited by maximum junction temperature, See Transient Thermal Impedance Curve (Figure 5) 3. Vop = 25V, Starting Ty) = 25C, L = 17.25mH, Rg = 250, Peak i, = 6.5A, (See Figure 15 and 16} CAUTION: These devices are sensitive to electrostatic discharge. Proper I.C. handling procedures should be followed. File Number 221 9 Copyright Harris Corporation 1991 5-8Specifications 2N6849 Electrical Characteristics @ tc = 25C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BYoss Drain-Source Breakdown Voltage ~ 100 _ _ v Vag = 0V. Ip = 250pA Vasitn) Gate Threshold Voltage ~2.0 _ - 40 v Vos = Yas: |p = -0.25mA less Gate-Source Leakage Forward = _ 100 nA Vag = ~20V less Gate-Source Leakage Reverse _ _ 100 nA Vas = 20V loss Zero Gate Voltage Drain Current _ _ ~ 0.25" HA Vos = Max. Rating, Vag = OV - _ - 1000 HA Yps = Max. Rating x 0.8, Vag = OV. Te = 125C VpS(on) On-State Drain Voltage _ - -2.1 v Vos > 'pion)Fpsienymax.. Vag = -10V. Ip = 6.54 Rosion) _ Static Drain-Source On-State _ 0.30 9 Veg = -10V, Ip = ~4.1A . + Resistance Sts Forward Transconductance 25 3.5 75 SO) Vos = -5. ojo) * Ros(ony Max. p= -4.1A Ciss Input Capacitance _ 500 _ pF Vag = OV. Vos = -25V,t = 1.0 MHz Coss Output Capacitance - 300 _ pF See Fig. 10 Crss Reverse Transfer Capacitance _ 100 =- pF tg(on) Turn-On Delay Time ~_ 30 60 ns Vop = ~42, Ip = -4.1A, Zg = 502 tr Rise Time _ 70 140 ns See Fig. 17 lajoff) Turn-Off Delay Time =- 70 140 ns (MOSFET switching times are essentially - indep Yt of operating temperature.} tf Fall Time _> 70 140 ns Q, Total Gata Charge _ 25 45 nc Vag = -18V. lp = -15A. Vpg = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is assentially ind nt of ting temperature Qgs Gate-Source Charge _ 13 23 ne independe operating perature.) Qga Gate-Drain (Miller} Charge _ 12 22 nc Lp Internal Drain Inductance > 5.0 _ nH Measured from the Modified MOSFET D drain lead, symbol showing the aw 5mm (0.2 in.) internal device w i from header to inductances. Zz a center of die. =z Ls Internat Source inductance _ 15 _ nH Measured from the _@ = source lead, 5 mm G x (0.2 in.) from header uu to source bonding a = pad. 3 s a Thermal Resistance R6s Junction-to-Case _ _ 5.0 C/W Roa Junction-to-Ambient _ 175 C/W Typical socket mount Source-Drain Diode Ratings and Characteristics > Parameter Min. Typ. Max. Units Teet Conditions Ig Continuous Source Current - _ ~6.5* A Modified MOSFET symbol {Body Diode) showing the integral reverse P-N junction rectifier. G ism Pulse Source Current (Body Diode) _ 25 Vsp __ Diode Forward Voltage ~ - 15 v To = 25C, Ig = 6.5A, Vgg = OV s tee Reverse Recovery Time ~ _ 250 ns Ty = 25C, Ip = -6.5A, dig/dt = 100 A/us Qar Reverse Recovered Charge - 18 _ yc Ty = 25C, Ip = -6.5A, dig/dt = 100 Ajus ton Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + ip. *JEDEC Registered Value @ Vop = 25V, starting Ty = 25C, L = 17.25 mH, @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. Ae = 252, Peak h = 6.5A. (See Fig. 15 and 16) @ Repetitive Rating: Pulse width limited by max, junction temperature. See Transient Thermal Impedance Curve (Fig. 5}.2N6849 =20 ; T ' | 8O pS PULSE TEST | vi >t xR os a 80 uS PULSE _ DS > !Dfon) * ROS(on) max -16 - Q -16 ons = w + ' Ty=125 C s a we peep ence < = Boy be WT _ 712 of Z Z ly w po J @ | 2 2 1 9 Oo -8 t + + - 4 z z z Z bok - a Go ! | 2 a -4 copes = 1 4 - a a ! | | i -10 -20 30 -40 -50 a -2 -4 -6 -8 -10 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) G20S-43288 9205-43289 Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics =T00T- ; THE: LETT oP Se 6 - OPERATION IN THIS AREA | f= 4 [4 18 LIMITED BY Ros ony | | HLH = = ae eee eeeae a a L Lh a pel be ddd] yo-8 & Bynes vids th 10yS yn wi wi he N w a a N } 100 uS = = = Z Z Ta = 8 5 Hi ms AY w Ww }41) g & 5 4 3 ia z Z -1.0 - SES =< & = 6 To = 25C top TNETTS 100 ms span a 2 Ty = 150 C MAX. t o -2 BS 4) Raye = 5.0 C/W a8 .. + tan SINGLE PULSE pc | 2b To . 7 t HHH =o1j Ll il J 2 4 68 2 468 2 4684 9 -t -2 -3 74 5 -1.0 -10 100 1000 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DAAIN-TO-SOUACE VOLTAGE (VOLTS) 92U8 43290 92CS-43318 Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area E 5 oes Nae gZu sz W af&z ona z2u ar = Sof ou 1, DUTY FACTOR, D = ty/ta ot 4 2. PEA UNIT BASE = Rgyc ag SINGLE PULSE (TRANSIENT = 5.0 DEG. C/W. THERMAL IMPEDANCE) 3. Tym -To - =Ppom-Z 2 2 5 2 5 2 s 2 5 10-5 107-4 1073 1072 497-1 1.0 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) 920M. 43232 Fig. 5 - Maximum Effective Transient Thermal impedance, Junction-to-Case Vs. Pulse Duration2N6849 t = Vos > fpjen) BDsion) max. 80 a z wa = a a w o z x 8 > o z 6 3 2 = Fd a o IDR: REVERSE DRAIN =1 16 -04 -06 -08 -1.0 -1.2 -14 -16 -1.8 Ip, DRAIN CURRENT (AMPERES) Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS} 9205-43293 9208-43270 Fig. 6 - Typical Transconductance Vs. Drain Current Fig. 7 - Typical Source-Drain Diode Forward Voltage 8 z 3 3 5 2 $a a aw = E oN z wd og a W < wu iL #2 ON uw 5 e5 zQ 5 32 o Sz a3 = ow Oa < = Fo oo za Ez Le ga z Ow a> = a = 8 Veg = -10V 5 8 = Ip =-3.5A o > = ~40 40 80 120 160 ~40 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) B2C8-43204 9268-43318 Fig. 8 - Breakdown Voltage Vs. Temperature Fig. 9 - Normalized On-Resistance Vs. Temperature 1000) Ves =o z Ip =-154 t=1MHz FE FOR TEST CIRCUIT 00 \ Ciss = Cge + Cog, Cay SHORTED g SEE FIGURE 18 . \ Cres = Cog a rs Con Cog < & Coss = Cas + oe 5 2 600 on * See 2 -10 NSN > z \ Cie Cas + Cog "4 x g iii K) 5 3 400 3 -1 Q \ =l~ J y 5 ee & 1 200 N c 3 ~~ ] a 3 | > 10 -20 -30 40 ~5O 1 Ving DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) 9205-43200 9208-43207 Fia. iu - i vorcat Vapacitance Vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge Vs. Gate-to-Source vorage1.0 Veg = -10V z a) wl 2a 3: & & 06 Ey | 22 < zG 04 7 ge bo a Vas = -209 r eg 02 Es Rosjon} MEASURED WITH CURRENT PULSE OF 2.0 1S [- DURATION. INITIAL Ty = 25 C (HEATING EFFECT OF 2.0 uS PULSE 1S MINIMAL} 1 1 1 1 roa L Qo ~10 -20 -30 Ip, DRAIN CURRENT {AMPERES) 1 =40 -50 9205-43298 Fig. 12 - Typical On-Resistance Vs, Drain Current a & = z Q - < & w 9 a x w 6 a 00 1 Tc, CASE TEMPERATURE (C) 92C$-43300 Fig. 14 - Power Vs. Temperature Derating Curve 2N6849 PULSE WIDTH Vas (ON) + 10V So 7X" INPUT 50% 50 % 10% VGs (OFF)OV nse TIMES INPUT PULSE FALL TIME tg (on) tr tg totf) ty Vos (OFF) 10% 90 % OUTPUT Vos (ON) 0% 10% 9208-43306 Fig. 17 - Switching Time Test Circuit 1 ry a w we a z . z w c - 4 > Qo z < e a 4 75 1 1 Tc, CASE TEMPERATURE (C) 25 50 92C8-43320 Fig. 13 - Maximum Drain Current Vs. Case Temperature Vos } ov Ves =-10V T VARY tp TO OBTAIN REQUIRED PEAK i, 92C8-43278 Fig. 15 - Unclamped Inductive Test Circuit N { X ft \ / N i N 7 x f i th I / vo t \ |. _.] BYpss 9205-43279. Fig. 16 - Unclamped Inductive Waveforms ~Vos (ISOLATED CURRENT SUPPLY) REGULATOR 6 4 COMPLIMENT 00> OF DUT BATTERY 1 0 I=. + O+Vps 1 Ip CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR 92C$-43307 Fig. 18 - Gate Charge Test Circuit