Jun.-01-'05
Jun.-01-'05
Jun.-01-'05
DATE NAME
DRAWN
CHECKED
APPROVED
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SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
FMW16N60G
MS5F6146
MS5F6146
1/19
Power MOSFET
Jun.-01-2005
CHECKED
a
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H04-004-03
MS5F6146
2/19
a
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Jun.-01
2005
Aug.-03
2005 Added aAdded newpackage
types
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H04-004-03
MS5F6146
3/19
a
1.Scope This specifies Fuji Power MOSFET FMW16N60G
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Type name and Ordering code
Type Name
5.Outview and Standard packing Specification
6.Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 600 V
VDSX 600 V VGS=-30V
Continuous Drain Current ID16 A
Pulsed Drain Current IDP 64 A
Gate-Source Voltage VGS 30 V
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive L=1.74mH
Maximum Avalanche Energy Vcc=60V *1
Maximum Drain-Source dV/dt dVDS/dt kV/μs
Peak Diode Recovery dV/dt dV/dt kV/μs
Ta=25℃
Tc=25℃
Operating and Storage Tch 150
C
Temperature range Tstg -55 to +150
C
*1 See to Avalanche Energy Graph (Page 18/19)
*2 IF
-ID,-di/dt=50A/μs,Vcc
BVDSS,Tch
150
C
Maximum Power Dissipation PDW
*2
A Tch<=150℃
EAS mJ
242.7
16
Ordering code Country code Packaging
Assembly location
FMW16N60G FMW16N60G SC (Blank) Japan
FMW16N60G SC-K1 K1 'Factory A' at Korea
Ordering code Package
Type
Out view Standard packing
Specification
VDS<=600V
FMW16N60G SC TO-247 page 8/19 MS5Q0006
FMW16N60G SC-K1 page 9/19 MS5Q0064
Drain-Source Voltage
IAR
20
235
2.50
5
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H04-004-03
MS5F6146
4/19
a
７
.Electrical Characteristics at Tc=25
℃
(unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250μA
Breakdown Voltage BVDSS VGS=0V 600 - - V
Gate Threshold ID=250μA
Voltage VGS(th) VDS=VGS 3.0 - 5.0 V
Zero Gate Voltage VDS=600V
VGS=0V Tch=25℃- - 25
Drain Current IDSS VDS=480V
VGS=0V Tch=125℃- - 250
Gate-Source VGS=30V
Leakage Current IGSS VDS=0V - 10 100 nA
Drain-Source ID=8A
On-State Resistance RDS(on) VGS=10V - 0.42 0.57 Ω
Forward ID=8A
Transconductance gfs VDS=25V 6.5 13 - S
Input Capacitance Ciss VDS=25V - 1590 2390
Output Capacitance Coss VGS=0V - 200 300
Reverse Transfer f=1MHz - 11 17 pF
Capacitance Crss
td(on) Vcc=300V - 29 43.5
Turn-On Time tr VGS=10V - 16 24
td(off) ID=8A - 58 87 ns
Turn-Off Time tf RG=10Ω- 8 12
Total Gate Charge QGVcc=300V - 34 51
Gate-Source Charge QGS ID=19A - 12 18 nC
Gate-Drain Charge QGD VGS=10V - 10 15
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Avalanche Capability
L=
1.74m
H
Tch=25
℃
IAV See Fig.1 and Fig.2 16 - - A
Diode Forward IF=16A
On-Voltage VSD VGS=0V Tch=25℃- 1.00 1.50 V
Reverse Recovery IF=16A
Time trr VGS=0V - 0.68 - μs
Reverse Recovery
-di/dt=100A/
μ
s
Charge Qrr Tch=25℃- 7.8 - μC
８
.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.532 ℃
/W
Channel to Ambient Rth(ch-a) 50.0 ℃
/W
μA
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H04-004-03
MS5F6146
5/19
a
Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
L=1.74mH
Vcc=60V
Single Pulse Test
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H04-004-03
MS5F6146
6/19
a
9.Reliabilitytest items
All guaranteed values are under the categoriesof reliabilityper non-assembled(onlyMOSFETs).
Each categoriesunder the guaranteed reliabilityconformtoEIAJ ED4701/100 method104
standards.
Test items requiredwithout fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering(Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test Testing methods andConditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F: 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247: 25N ED4701/400 15
TO-3PL: 45N method401
T-Pack,K-Pack : 10N
Force maintainingduration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F: 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL: 15N method401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torquevalue: (M3) EIAJ (0:1)
Strength TO-220,TO-220F: 40±10N・cm ED4701/400 15
TO-3P,TO-3PF,TO-247 : 50±10N・cm method402
TO-3PL : 70±10N・cm
4 Vibration frequency: 100Hz to 2kHz EIAJ
Acceleration: 200m/s
2
ED4701/400 15
Sweepingtime: 4min. method403
48min.for eachX,Y&Z directions.
5 Shock Peak amplitude:15km/s
2
EIAJ
Durationtime : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method404
6 Solderability Solder temp. : 245±5°C
Immersion time: 5±0.5sec
Eachterminal shall beimmersed in ----- 15
the solder bath within1 to 1.5mm from
thebody.
7 Resistanceto Solder temp. : 260±5°C EIAJ
Soldering Heat Immersion time: 10±1sec ED4701/300 15
Number of times : 1times method302
Mechanical test methodsMechanical test methods
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H04-004-03
MS5F6146
7/19
a
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature : 150+0/-5°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method201
2 LowTemp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relativehumidity : 85±5% ED4701/100 22
Storage Test duration : 1000hr method103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relativehumidity : 85±5% ED4701/100 22
BIAS Bias Voltage : VDS(max) * 0.8 method103
Testduration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relativehumidity : 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method103
Testduration : 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Low temp.side : -55±5°C/30min. ED4701/100 22
RT : 5°C 〜35°C/5min. method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid :pure water(runningwater)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Durationtime: HT 5min,LT 5min method307
Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating
Tch
≦
Tch(max.)
ED4701/100 22
Life Test duration : 3000 cycle method106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Testduration : 1000hr method101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : 500V ED4701/100 22
Testduration : 1000hr method101
Climatic test methods
Endurance test methods
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL Ω
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Electrical
Characteristics
Outview
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H04-004-03
MS5F6146
8/19
a
Note : 1. Marking Infomation
Type Name : 16N60G
Lot No. : YMNNN
Y: Year Code
M : Month Code
NNN : Lot SerialNumber
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thir d party nor used for t he manufacturi ng purpo ses wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F6146
9/19
a
Note : 2. Marking Infomation
Type Name : 16N60G
Lot No. : YMNNN
Y: Year Code
M : Month Code
NNN : Lot SerialNumber
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lent , or disclose d in any way whatsoever for the use of any
thir d party nor used for t he manufacturi ng purpo ses wit hout
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H04-004-03
MS5F6146
10/19
a
10.Cautions
･AlthoughFujiElectriciscontinuallyimprovingproductqualityandreliability,asmallpercentageof
semiconductor productsmaybecomefaulty.WhenusingFuji Electric semiconductor products inyour
equipment,youarerequested totakeadequatesafetymeasurestopreventtheequipmentfromcausing
physicalinjury,fire,orother problem in caseanyof the products fail.Itisrecommendedtomake your
designfail-safe,flameretardant, andfreeofmalfunction.
･TheproductsdescribedinthisSpecificationareintendedforuse inthefollowingelectronic and electrical
equipmentwhichhasnormalreliabilityrequirements.
･Computers ･OAequipment ･Communicationsequipment(Terminaldevices)
･Machinetools ･AVequipment ･Measurementequipment
･Personalequipment ･Industrialrobots ･Electricalhomeappliances etc.
･TheproductsdescribedinthisSpecificationarenot designed ormanufactured tobeusedinequipmentor
systems usedunderlife-threatening situations. If youarecons
ideringusing theseproducts in the equipment
listedbelow,firstcheck thesystem constructionandrequiredreliability,and takeadequatesafetymeasures
suchasabackup system to prevent the equipmentfrom malfunctioning.
･Backbonenetworkequipment ･Transportationequipment(automobiles,trains,ships,etc.)
･Traffic-signalcontrolequipment ･Gasalarms,leakagegasautobreakers
･Submarinerepeaterequipment ･Burglar alarms,firealarms, emergency equipment
･Medicalequipment ･Nuclearcontrolequipment etc.
･Do notusethe products inthisSpecificationfor equipmentrequiringstrict reliability suchas(but not limited
to):
･Aerospaceequipment ･Aeronauticalequipment
11.Warnings
･TheMOSFETs shouldbeusedin products withintheirabsolutemaximum rating(voltage, current,
temperature, etc.).
･TheMOSFETsmaybedestroyedifusedbeyondtherating.
･Weonly guaranteethenon-repetitiveandrepetitiveAvalanchecapabilityandnotfor thecontinuous
Avalanchecapabilitywhichcanbeassumedasabnormal condition.Please notethedevicemaybe
destructedfrom theAvalancheoverthe specified maximum rating.
･Theequipment containingMOSFETsshould haveadequatefusesor circuit breakers to prevent the
equipment from causingsecondarydestruction(ex. fire,explosion etc…).
･UsetheMOSFETswithintheir reliabilityand lifetimeundercertainenvironmentsorconditions. The
MOSFETsmayfail beforethetargetlifetimeofyour products ifusedundercertainreliabilityconditions.
･Becareful when handlingMOSFETsforESDdamage.(It isanimportantconsideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･Itisrecommended that anyhandlingofMOSFETsisdoneongroundedelectricallyconductivefloorand
tablemats.
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H04-004-03
MS5F6146
11/19
a
･Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes
by grounding out through a high impedance resistor (about 1M)
･When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron
or soldering bath through a low impedance resistor.
･You must design the MOSFETs to be operated within the specified maximum ratings(voltage,
current, temperature, etc.) to prevent possible failure or destruction of devices.
･Consider the possible temperature rise not only for the channel and case, but also for the outer
leads.
･Do not directly touch the leads or package of the MOSFETs while power is supplied or during
operation in order to avoid electric shock and burns.
･The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit
smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause
the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during
operation. Design the arrangement to prevent the spread of fire.
･The MOSFETs should not used in an environment in the presence of acid, organic matter, or
corrosive gas(hydrogen sulfide, sulfurous acid gas etc.)
･The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Installation
･Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature Duration
2605C 101 seconds
35010 C 3.50.5 seconds
･The immersion depth of the lead should basically be up to the lead stopper and the distance should
be a maximum of 1.5mm from the device.
･When flow-soldering, be careful to avoid immersing the package in the solder bath.
Recommendedsolderingcondition
Methods
Categories Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Onlyterminal)
Infrared
Reflow Air
Reflow Soldering
iron
(Re-work)
TO-3PL × ◎ × × ○
TO-3P × ◎ × × ○
TO-247 × ◎ × × ○
TO-3PF × ◎ × × ○
TO-220 × ◎ × × ○
TO-220F × ◎ × × ○
T-Pack(L) × ◎ × × ○
Through-Hole
TO-3PL-7 × ◎ × × ○
◎：Possible ○：Limitedto1time ×：Unable
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H04-004-03
MS5F6146
12/19
a
･Refer tothefollowingtorque referencewhenmounting the device ona heatsink.Excess torque
appliedtothe mounting screw causesdamageto thedevice andweaktorque willincrease the
thermal resistance, both of whichconditionsmaydestroythedevice.
Table1:Recommendedtighteningtorques.
Packagestyle Screw Tighteningtorques Note
TO-220
TO-220F M3 30–50Ncm
TO-3P
TO-3PF
TO-247 M3 40–60Ncm
TO-3PL M3 60 –80 Ncm
flatness :<=±30m
roughness :<=10m
Plane offtheedges:
C<=1.0mm
･The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening
torque withinthe limitsofthis specification.
･Improperhandlingmay causeisolation breakdownleadingtoacriticalaccident.
ex.) Overplaneoffthe edgesofscrewhole. (Recommendedplaneofftheedge isC<1.0mm)
･Werecommendtheuseofthermalcompoundtooptimizetheefficiencyofheatradiation.Itisimportantto
evenly applythecompoundandtoeliminateanyairvoids.
Storage
･TheMOSFETsmust bestored at astandardtemperatureof5to35℃andrelative humidity of45to 75%.
･Ifthestorage area isvery dry, ahumidifier may berequired. In suchacase,use onlydeionizedwater or
boiledwater,sincethechlorineintapwatermay corrodetheleads.
･TheMOSFETsshouldnot besubjectedtorapidchangesintemperaturetoavoidcondensationonthe
surface ofthe MOSFETs.Thereforestorethe MOSFETsinaplacewherethetemperatureis steady.
･TheMOSFETsshouldnot bestoredontopofeachother, sincethismaycause excessiveexternalforceon
thecase.
･TheMOSFETsshouldbestoredwiththe leadterminals remaining unprocessed.Rust maycause
presolderedconnections tofail during later processing.
･TheMOSFETsshouldbestoredin antistaticcontainersorshippingbags.
12.Appendix
･Thisproducts does notcontainPBBs (PolybrominatedBiphenyl) orPBDEs(Polybrominated Diphenyl
Ether ),substances.
･Thisproductsdoes notcontainClass-IODSandClass-IIODSsubstancessetforceby ‘Clean Air Act of US’
law.
･If youhaveanyquestionsabout anypartofthis Specification,pleasecontactFuji
Electric or its sales agentbeforeusingtheproduct.
･NeitherFujinor its agents shall beheldliable forany injury causedby using theproducts
notinaccordancewiththeinstructions.
･Theapplicationexamplesdescribed inthisspecification are merelytypicalusesof Fuji
Electricproducts.
･This specificationdoes notconferany industrial property rights or otherrights,nor
constitutealicense for such rights.
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H04-004-03
MS5F6146
13/19
a
0 4 8 12 16 20 24
0
10
20
30
40
50
7V
20V
10V
8V
6.5V
VGS=6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
0 25 50 75 100 125 150
0
100
200
300
400
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
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H04-004-03
MS5F6146
14/19
a
0 1 2 3 4 5 6 7 8 9 10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 spulse test,VDS=25V,Tch=25 C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
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H04-004-03
MS5F6146
15/19
a
0 10 20 30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
10V
20V
8V
7V
6.5V
VGS=6V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
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H04-004-03
MS5F6146
16/19
a
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VGS(th) [V]
Tch [C]
0 10 20 30 40 50 60
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25 C
VGS [V]
480V
300V
Vcc= 120V
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H04-004-03
MS5F6146
17/19
a
100101102103
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
DWG.NO.
This m ater ial and the informat ion her ein is t he prope rty of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent , or disclose d in any way whatsoever for the use of any
thir d party nor used for t he manufacturi ng purpo ses wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F6146
18/19
a
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
IAS=7A
IAS=10A
IAS=16A
EAV [mJ]
starting Tch [C]
MaximumAvalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
DWG.NO.
This m ater ial and the informat ion her ein is t he prope rty of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent , or disclose d in any way whatsoever for the use of any
thir d party nor used for t he manufacturi ng purpo ses wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F6146
19/19
a
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=50V
Avalanche Current IAV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [℃/W]
t [sec]
