RA03M3540MD-101 - Mitsubishi Electric Semiconductor

MITSUBISHI RF MOSFET MODULE

RA03M3540MD

RoHS Compliance , 350-400MHz

38dBm

7.2V, 2 Stage Amp. For PORTABLE RADIO

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

1/7

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA03M3540MD is a 38 dBm output RF MOSFET

Amplifier Module for 7.2 volt portable radios that operate in the

350 to 400 MHz range.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• Pout>38dBm @ VDD=7.2V, Pin=19dBm

Idq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.)

• ηT>35% @ VDD=7.2V, Pout=38dBm (Pin adjust.),

Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)

• IMD3<-25dBc @ VDD=7.2V, Pout (average) =35dBm (Pin adjust.)

Two tone test at 1KHz separation

Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.) PACKAGE CODE: H46S

1 RF Input (Pin)

2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1）

3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2）

4 Drain Voltage (VDD), Battery

5 RF Output (Pout)

6 RF Ground (Case)

BLOCK

DIAGRAM 3

• Broadband Frequency Range: 350-400MHz

• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm



RoHS COMPLIANT

• RA03M3540MD-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA03M3540MD-101 Antistatic tray,

25 modules/tray

MITSUBISHI RF POWER MODULE

RoHS COMPLIANT RA03M3540MD

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS

(Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 9.2 V

VGG1 Gate Voltage VDD<7.2V, Pin=0mW 4 V

VGG2 Gate Voltage VDD<7.2V, Pin=0mW 4 V

Pin Input Power 100 mW

Pout Output Power f=350-400MHz,

ZG=ZL=50Ω 10 W

Tcase(OP) Operation Case Temperature Range -30 to +90 °C

Tstg Storage Temperature Range -40 to +110 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 350 400 MHz

Pout Output Power VDD=7.2V,Pin(Single Carrier)=+19dBm,

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.) 38 dBm

ηTTotal Efficiency 35 %

2fo2nd Harmonic -25 dBc

ρin Input VSWR 4.4:1 —

IGG Gate Current

VDD=7.2V,Pout (Single Carrier) =38dBm (,Pin adjust.),

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)

1 mA

IMD3 3rd Inter Modulation

Distortion -25 dBc

IMD5 5th Inter Modulation

Distortion

VDD=7.2V,Pout (average)=35dBm(Pin adjust.),

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.) ,

Two tone test at 1KHz separation -25 dBc

GV Gain Variation

VDD=7.2V,Pout (Single Carrier)=35dBm(Pin adjust.),

Across specified frequency range

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)

0 4 dB

— Stability

Vdd=6.0/7.2/9.2V,

Idq1=20mA(Vgg1 adjust),

Idq2=1A(Vgg2 adjust) ,

Po(Single Carrier)=15-38dBm(Pin control)

LOAD VSWR=2:1(All Phase),Zg=50Ω

No parasitic oscillation —

— Load VSWR T olerance

Vdd=9.2V, Pout(Single Carrier)=39dBm (Pin adjust.),

LOAD VSWR=2:1(All Phase),Zg=50Ω,

Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),

Idq2=1A(Vgg2 adjust.@Vdd=7.2V)

No degradation or destroy —

All parameters, conditions, ratings, and limits are subject to change without notice.

MITSUBISHI RF POWER MODULE

RoHS COMPLIANT RA03M3540MD

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE

(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

RA03M3540MD

Effi vs. Po

10 15 20 25 30 35 40

Po(sing le carrier)(dBm)

Effi(%),Gp(dB)

Effi

Tc=+25deg.C, Vdd=7.2V

f=350MHz,

Idq 1st stager=20mA

Idq Final St age=1.0A

RA03M3540MD

Effi vs. Po

10 15 20 25 30 35 40

Po(sing le carrier)(dBm)

Effi(%),Gp(dB)

Effi

Tc=+25deg.C, Vdd=7.2V

f=375MHz,

Idq 1st stager=20mA

Idq Final St age=1.0A

RA03M3540MD

Effi vs. Po

10 15 20 25 30 35 40

Po(sing le carrier)(dBm)

Effi(%),Gp(dB)

Effi

Tc=+25deg.C, Vdd=7.2V

f=400MHz,

Idq 1st stager=20mA

Idq Final St age=1.0A

RA03M3540MD

IMD3,IMD5 v s. Po

-70

-60

-50

-40

-30

-20

-10

15 20 25 30 35 40

Po(2tone a verage)(dBm )

IMD3,IMD5(dBc)

IMD3(Delta freq=1 KHz)

IMD5(Delta freq=1 KHz)

Tc=+25deg.C, Vdd=7.2V

f=350MHz,

Idq 1 st st age=2 0 m A

Idq Final Stage=1.0A

RA03M3540MD

IMD3,IMD5 v s. Po

-70

-60

-50

-40

-30

-20

-10

15 20 25 30 35 40

Po(2tone a verage)(dBm )

IMD3,IMD5(dBc)

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Tc=+25deg.C, Vdd=7.2V

f=375MHz,

Idq 1 st st age=2 0 m A

Idq Final Stage=1.0A

RA03M3540MD

IMD3,IMD5 v s. Po

-70

-60

-50

-40

-30

-20

-10

15 20 25 30 35 40

Po(2tone a verage)(dBm )

IMD3,IMD5(dBc)

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Tc=+25deg.C, Vdd=7.2V

f=400MHz,

Idq 1 st st age=2 0 m A

Idq Final Stage=1.0A

MITSUBISHI RF POWER MODULE

RoHS COMPLIANT RA03M3540MD

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

2.3±0.4

3.5±0.2

(5.4)

1.5±0.2

30±0.2

26.6±0.2

21.2±0.2

23.9±1

6±1

18.8±1

13.7±1

9.9±1

6.1±1

②① ③④

(1.7)

(4.4)

6±0.2

10±0.2

2-R1.5±0.1

6±0.2

7.4±0.2

φ0.45±0.15

⑤⑥

1 RF Input (Pin)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

4 RF Output (Pout)

5 RF Ground (Case)

OUTLINE

DRAWING

(

)

MITSUBISHI RF POWER MODULE

RoHS COMPLIANT RA03M3540MD

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TEST BLOCK DIAGRAM (TWO TONE)

TEST BLOCK DIAGRAM (SINGLE CARRIER)

1 RF Input (Pin)

2 Gate Voltage (VGG1)

3 Gate Voltage (VGG2)

4 Drain Voltage (VDD)

5 RF Output (Pout)

6 RF Ground (Case)

MITSUBISHI RF POWER MODULE

RoHS COMPLIANT RA03M3540MD

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

EQUIVALENT CIRCUIT

2 34

1 5

1 RF Input (Pin)

2 Gate Voltage (VGG1)

3 Gate Voltage (VGG2)

4 Drain Voltage (VDD)

5 RF Output (Pout)

6 RF Ground (Case)

MITSUBISHI RF POWER MODULE

RoHS COMPLIANT RA03M3540MD

RA03M3540MD MITSUBISHI ELECTRIC 31 Jan 2007

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Output Power Adjust.:

Depending on linearity, the following two methods are recommended to adjust. the output power:

a) Non-linear FM modulation:

By the gate voltage (VGG).

b) Linear modulation:

By RF input power Pin.

The gate voltage is used to set the drain’s quiescent current for the required linearity.

Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and

drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.

When an amplifier circuit around this module shows oscillation, the following may be checked:

a) Do the bias decoupling capacitors have a low inductance pass to the case of the module.

b) Is the load impedance ZL=50Ω.

c) Is the source impedance ZG=50Ω.

Frequent on/off switching:

In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips

and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally

induced mechanical stress.

Quality:

Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions

exceeding those of mobile radios.

This module technology results from more than 20 years of experience, field proven in tens of millions of mobile

radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,

which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures

are found.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there

is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or propert

damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as

(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction o

mishap.