AP0103GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D 40V BVDSS@Tj=125oC RDS(ON) SO-8 Compatible with Heatsink Low On-resistance ID G RoHS Compliant & Halogen-Free 2.55m 140A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK(R) 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. D D D S S S G PMPAK(R) 5x6 Absolute Maximum Ratings Symbol o Parameter Rating Units VDS@Tj=125 C Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current (Chip), V GS @ 10V ID@TA=25 ID@TA=70 140 A 3 34.6 A 3 27.7 A 200 A 83.3 W 5 W 28.8 mJ Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation PD@TA=25 Total Power Dissipation 4 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Units 1.5 /W 25 /W 1 201105031 AP0103GMT-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 38 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=20A - 2.2 2.55 m VGS=4.5V, ID=20A - 2.9 3.6 m V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.6 3 VDS=10V, ID=20A - 80 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=20A - 23 37 nC Qgs Gate-Source Charge VDS=20V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11.5 - nC td(on) Turn-on Delay Time VDS=20V - 12 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3 - 40 - ns tf Fall Time VGS=10V - 35 - ns Ciss Input Capacitance VGS=0V - 2800 4480 pF Coss Output Capacitance VDS=15V - 780 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.7 3.4 Min. Typ. IS=20A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 40 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 45 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 2 o 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state. o 4.Starting Tj=25 C , VDD=25V , L=0.1mH , RG=25 , IAS=24A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0103GMT-HF 200 200 10V 7.0V 6.0V 5.0V V G = 4.0 V ID , Drain Current (A) 160 160 120 80 40 120 80 40 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 3.6 I D =20A I D =20A V G =10V T C =25 o C Normalized RDS(ON) 3.2 RDS(ON) (m) 10V 7.0V 6.0V 5.0V V G =4.0V o T C =150 C ID , Drain Current (A) o T C =25 C 2.8 1.6 1.2 0.8 2.4 0.4 2 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 40 I D =250uA o o T j =25 C Normalized VGS(th) (V) T j =150 C IS(A) 30 20 10 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0103GMT-HF 10 f=1.0MHz 4000 8 3000 C iss C (pF) VGS , Gate to Source Voltage (V) I D =20A V DS =20V 6 2000 4 1000 2 C oss C rss 0 0 0 10 20 30 40 1 50 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) Duty factor = 0.5 ID (A) 100us 1ms 10 10ms 100ms DC o T C =25 C Single Pulse 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x R thjc + T c 0.01 Single Pulse 1 0.01 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 200 V DS =5V VG ID , Drain Current (A) 160 QG 4.5V 120 QGS QGD 80 T j =150 o C 40 T j =25 o C Charge o T j =-40 C Q 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4