_ \ SEMICONDUCTOR en TECHNICAL DATA gye7s52 N97 = CRYSTALONCS 2866 Veterans Highway t Sule 14 "gs NPN Silicon Ronkonkoma, N.Y. 117% . Small-Signal Transistors designed for general-purpose switching and amplifier applications - en MAXIMUM RATINGS Rating Symbol Value Unit Collectar-Emitter Voltage VCEO 40 Vde Coltector-Base Voltage VcBo 7S Vde Emitter-Base Voltage VEBO 5.0 Rad 2N3735 Collector Current Continuous Ic 15 Adc CASE 79-04, STYLE 1 7 TOQ-205: 39) Device Dissipation Pr 0-205AD (TO-38) @TA=25C 2N3735 . * Watts Derate above 25 C 05 mwr C 2N3737 2 6 Watts Derate above 25C 29 we c @io=25C 2Nq735 166 wee Derate abave 25C 1.9 Natt 2N3737 11.3 ats Derate above 25C ae case Bne7a7 ie ' Operating Junction and Storage TJ. Ts1g -65 to 200 3 TO-206AB (10-48) Temperature Range _| Perce. CHARACTERISTICS (7, = 25C unless otherwise noted.) Characteristic symbol | Min Max Unit OFF CHARACTERISTICS : Collactor-Emitter Breakdown Voltage!} (ic = 10 mAdc. |p = 0) V(BR)}CEO 40 aad Vdc Collector-Base Breakdown Voltage (Ic = 10 Adc. IE = 0) ViBR}CBO 15 - Vde Emutter-Base Breakdown Voltage (ig = 10 pAdc. Ig = 9) ViBR)EBO 5.0 Vde Collector Cutolf Current (Vg = 30 Vae. Ig = 9) \cBo a 025 Ade Collector Cutoff Current ICEX wAde (VCE = 30 Vdc. VeB = 2.0 Vde) = 0.2 (VoE = 30 Vde. VER = 2 0 Vdc. Ta = 180 C) 250 Emitter Cutott Current (Vep = 4.0 Vdc. Ic = 0) lepo = a1 Ade 1. Oyised Pulse Width 250 to 260 ys Duty Cyrle 1 Ola 2 0 ieanbnue2N3735JAN, 2N3737JAN SERIES CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 ELECTRICAL CHARACTERISTICS continued (Ta, = 25C unless otherwise nated.) Characteristic | Symbot [min | ax unit ON CHARACTERISTICS OC Current Gain(1) NEE _ (Ig = 10 mAdc, VcgE = 1.0 Vde) 35 (ic = 180 mAdc. VCE = 1.0 Vde) 40 _ (ic = 500 mAde, Vee = 1.0 Vde) 40 140 (i = 1.0 Ade, Vcg = 1.5 Vde) 20 80 (ig = 1.5 Ade. VCE = 5.0 Vac) 20 - (Ig = 500 mAdc. Vcg = 10 Vde. Ta = -65C) 15 _ Collector-Emitter Saturation Voltage VcE(sat) Vde (Ic = 10 mAdc, ig = 1.0 mAdc) a 0.2 {ig = 150 mAde. tg = 15 mAdc)(1) - 0.3 {Ic = 500 mAde, tg = 50 mAdc)(1) - 05 (Ig = 1.0 Ade. Ip = 100 mAdc}(1) = 09 Base-Emitter Saturation Voltage VBE(sat) Vode (Ic = 10 mAdc. ip = 1.0 mAdc) - 0.8 (ig = 150 mAde, fp = 15 mAdc)(1) = 19 = (Ic = 500 mAdc, 1p = 50 mAdc)(1) 1.2 ra) (Ig = 1.0 Ade, Ip = 100 mAde)(1) 0.9 1.4 SMALL-SIGNAL CHARACTERISTICS Collector-Base Capacitance Capo ad 90 pF (Vcp = 10 Voe. Ie = 0. f = 0.1 to 1.0 MHz) Input Capacitance Cibo _ 80 pF (Veg = 0.5 Vdc. Ic = 0, f= 0.1 to 1 0 MHz} Small-Signal Current Transfer Ratio, Magnitude IDfai 25 6.0 a (Ic = 50 mAdc. VE = 10 Vdc. tf = 100 MHz) SWITCHING CHARACTERISTICS (See Figure 9) (Voc = 30 Vde, Ic = 1.0 Adc. Ig = 100 mAdc. VE = 2.0 Voc} Delay Time lq a 8.0 ns Rise Time tr a 40 ns Turn-Off Time tort) a 60 ns ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Tg = 30 15C, Vcg = 40 Vde, 10 Vdc JANS Py = 1.0 W 2N3735, 0.5 W 2N3737 initial and End Point Limits Characteristics Tested Symbot Min Max Unit Collector Cutoff Current (Vcog = 30 Vdc) \cBo _ 250 nAdc DC Current Gain(1) nFE 40 140 _ (Ic = 500 mAdc. VE = 1.0 Vdc) Delta from Pre-Burn-in Measured Values Min Max Detta Collector Cutoff Current Aicgo _ +100 % of Initial Value or +25 eee whichever is greater Delta DC Current Gam(1) NEE _ 415 % of Initial Value 11) Pulsed. Pulse Width 25C to 350 ws. Duty Cycle 10 to 2 0%. DISCRETE MILITARY OPERATION DATA