ee FAIRCHILD eee SEMICONDUCTOR +m NDP4060L / NDB4060L General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel Logic Level Enhancement Mode Field Effect Transistor Features April 1996 IBA, 6OV. Rygoy, = 0-12 @ Vag = SV Low drive requirements allowing operation directly from logic drivers. Vier) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low Rogan). TO-220 and TO-263 (DPAK) package for both through hole and surface mount applications. D ot 5 NDP Series $s To-2' 63AB | $s Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter NDP4060L NDB4060L Units Voss Drain-Source Voltage 60 Voorn Drain-Gate Voltage (R,, < 1 MQ) 80 Visge Gate-Source Voltage - Continuous +16 V - Nonrepetitive (f,< 50 ps) +25 5 Drain Current = - Continuous 15 A - Pulsed 45 P, Total Power Dissipation @ T,. = 25C 50 Ww Derate above 25C 0.33 WIC Ty. Tera Operating and Storage Temperature 65 to 175 C T, Maximum lead temperature for soldering 275 c purposes, 1/8" from case for 5 seconds 1997 Fairchild Semiconductor Corporation NDP4060L Rev B/ NDB4060L Rev CElectrical Characteristics (T, = 25C unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max | Units DRAIN-SOURCE AVALANCHE RATINGS ote 1) Woes Single Pulse Drain-Source Avalanche Vop = 25V,1,=15A 40 mJ Energy laa Maximum Drain-Source Avalanche Current 15 A OFF CHARACTERISTICS BV nas Drain-Source Breakdown Voltage Vag = OV, |= 250 LA 60 V loss Zero Gate Voltage Drain Current Vig = 60 V, Vg= OV 250 HA T, =125C 1 mA lager Gate - Body Leakage, Forward Vag = 16 V, Vyg = OV 100 nA lager Gate - Bocly Leakage, Reverse Vig = 16 V, Vig= OV -100 nA ON CHARACTERISTICS noie+) Versa Gate Threshold Voltage Vos = Vag: |p = 250 WA 1 1.5 2 V [T,=125 | 0 | 11 | 15 Poston Static Drain-Source On-Resistance Vig = 5 VI =75A 0.085 0.1 Qo [T, =125C 014 | o16 Ving = 10 V, |= 15A 0.07 | 0.08 loin On-State Drain Current Vag = 5V, Vig = 10V 15 A Os Forward Transconductance Voe= 10V, 1, =7.5A 3 8 s DYNAMIC CHARACTERISTICS C... Input Capacitance Vog = 25 V, Vag = 9 V, 510 600 pF C... Output Capacitance f= 1.0 MHz 170 | 200 | pF C.. Reverse Transfer Capacitance 50 100 pF SWITCHING CHARACTERISTICS (note +} bony Turn - On Delay Time Vip = SOV, = 15A, 9 20 ns t Turn - On Rise Time = =5V, Roey = 51 2, 151 250 ns ag HI byt Turn - Off Belay Time 35 100 nS t Turn - Off Fall Time 61 150 ns Q, Total Gate Charge Vo = 48 V, 11 17 nc Q.. Gate-Source Charge Ip= TBA, Vig = 8 V 2 nc QO. Gate-Drain Charge 6.1 nc NDP4060L Rev B/ NDB4060L Rev CElectrical Characteristics (7, = 25C unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max | Units DRAIN-SOURCE DIODE CHARACTERISTICS I, Maximum Continuos Drain-Source Diode Forward Current 15 A lia Maximum Pulsed Drain-Source Diode Forward Current 45 Ven Drain-Source Diode Forward Voltage Vig = OV, l= 7.5 A note} 0.95 13 V T, =125C oss | 12 t, Reverse Recovery Time Vig =OV,1-= 15A, 51 100 ns dl -/dt = 100 Aus le Reverse Recovery Current 3.6 7 A THERMAL CHARACTERISTICS Rac Thermal Resistance, Junction-to-Case 3 CAN Rasa Thermal Resistance, Junction-to-Ambient 625 CAN Note 1 Pulse Test Pulse Width < 300 us Duty Cycle <2 0% NDP4060L Rev B/ NDB4060L Rev CTypical Electrical Characteristics 30 nm a = 5 i 20 a 3 Mw a 5 Ww x og 15 z rc 5 o & ~ 3 10 g a w r a a r 7. 6 oo 0 QO 1 2 3 4 5 Vopg , ORAIN-SOURCE VOLTAGE (} Figure 1. On-Region Characteristics 22 i ima 2 9 = z Oh oF Rom NB a W a wy ze, ze =e =o rg ce oy go 6 = ul zr <2 S23 aa a8 88 cag cz & s 0 a o4 -50 -25 0 25 50 7S 100 125 150 175 Ty JUNCTION TEMPERATURE (%) Figure 3. On-Resistance Variation with Temperature 20 T Vv v Ty = 88% hob V4 L ps = 10 / 1 125C WW =< 16 7 A < Ly g = P oO E Ha fi 12 Lf, s 9 3 Uf 2 ir = ff 3 r ce 5 oft Ze ZEF =< e WwW fang ~Q a L Jf > a 9 , f g E L = o 0 1 2 3 4 5 is} Ving GATE TO SOURCE VOLTAGE (V} Figure 5. Transfer Characteristics DRAIN-SOURCE ON-RESISTANGE io |p . BRAIN GURRENT {A) 15 20 30 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 25 Vag= 9 1s en } _ asc | ae / 55C r ea aos 0 5 10 15 20 25 30 lb DRAIN CURRENT (A} Figure 4. On-Resistance Variation with Drain Current and Temperature 12 | | 4 a Vos = Vas ~ Ip =250LA | 1 as o@ a7 Se o6 -50 -25 a 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE (%C} Figure 6. Gate Threshold Variation with Temperature NDP4060L Rev B/ NDB4060L Rev CTypical Electrical Characteristics (continued) ca BY pgs NORMALIZED DRA IN-SOURCE BREAKDOWN VOLTAGE, a am ha ba oa tn o on ou -60 -25 o 25 50 75 1o0 125 150 Ty , JUNCTION TEMPERATURE (6) Figure 7. Breakdown Voltage Variation with Temperature 1500 jooo 500 g wo 2 200 E Q = ivo = Qa 50 20 a4 D2 os 1 2 5 io 20 Vos: DRAIN TO SOURGE VOLTAGE (} Figure 9. Capacitance Characteristics Vop ce Vin S Rt | VOUT Veen o , \ . GEN G } DUT ) onaet_lel | Res S s t Figure 11. Switching Test Circuit 50 = 5 a 1 fa os a z = o1 a Ww wo c Q tm oot i an Boot D2 o4 06 08 1 12 14 Ven . BODY DIODE FORWARD VOLTAGE () SD Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 10 | lp = 7 5A Vpg = 12 LY fA \ Vag GATE-SOURCE VOLTAGE (v) o 4 8 12 16 20 Qq . GATE GHARGE (nG} Figure 10. Gate Charge Characteristics eet ptt ty t stony mt, lator) ml bet] t 90% KO 0% QUT F10% 10% INVERTED 90% Vin 50% 10% 5 PULSE WIDTH + Figure 12. Switching Waveforms NDP4060L Rev B/ NDB4060L Rev CTypical Electrical Characteristics (continued) rtt, NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANGE TRANSCONDUCTANGE (SIEMENS) Ses QO 4 8 i2 16 Ip , DRAIN CURRENT (A) Figure 13. Transconductance Variation with Drain Current and Temperature os o3 G2 04 003 O02 Pulse oo1 6 o0c01 0 00005 0 0001 ooocs5 0001 20 t 1 |, DRAIN CURRENT (A) Vag = 10 SINGLE PULSE Rajo- 3 C/W To = 25C 2 5 10 3o 50 670 Vog . ORAIN-SOURCE VOLTAGE [V) Figure 14. Maximum Safe Operating Area Raye (= rit) * Fgie Ty- Ty =P * Rage th Duty Cycle D=t, Mp 6005 oo1 005 O41 o5 1 TIME Figure 15. Transient Thermal Response Curve NDP4060L Rev B/ NDB4060L Rev C