Sep.2000
H
D
BS
V
U
K
J
T
R
GF
L
P
C A
AA M AAM M
P
N
GuP
EuP
GuN
EuN
U
GvP
EvP
V
GvN
EvN
GwP
EwP
W
GwN
EwN
P
N
P
P
N
NUVW
G
u
PG
v
PG
w
P
G
u
NG
v
NG
w
N
E
u
PE
v
PE
w
P
E
u
NE
v
NE
w
N
XXX
TAB #110, t = 0.5
QQN
Z - M5 THD
(7 TYP.)
Y - DIA.
(4 TYP.)
E
M
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 3.543±0.01 90.0±0.25
D 3.15±0.01 80.0±0.25
E 2.01 51.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max
J 1.18 30.0
K 0.98 25.0
L 0.96 24.5
M 0.79 20.0
N 0.67 17.0
Dimensions Inches Millimeters
P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5
X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5
AA 0.08 2.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offer ing simplified sys-
tem assembly and thermal man-
agement.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-24H
is a 1200V (VCES), 100 Ampere
Six-IGBT Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 100 24
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Outline Drawing and Circuit Diagram
Sep.2000
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temper ature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC100 Amperes
Peak Collector Current ICM 200* Amperes
Emitter Current** (TC = 25°C) IE100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc780 Watts
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 830 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V – 2.5 3.4** Volts
IC = 100A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QGVCC = 600V, IC = 100A, VGE = 15V – 500 – nC
Emitter-Collector Voltage VEC IE = 100A, VGE = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 20 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 7 nF
Rev erse Transf er Capacitance Cres – – 4 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time trVCC = 600V, IC = 100A, – – 350 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω– – 300 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 100A, diE/dt = –200A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = –200A/µs – 0.74 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.16 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.35 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.025 °C/W
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
120
40
0
VGE = 20V
15 12
11
8
7
Tj = 25oC
80
160
200
10
9
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
160
120
80
40
0
VCE = 10V
Tj = 25°C
Tj = 125°C
200
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 40 80 120 160
4
3
2
1
0200
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
Tj = 25°C
IC = 40A
IC = 200A
IC = 100A
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
VGE = 0V
10
1
Cies
Coes
Cres
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
trr
Irr
di/dt = -200A/µsec
Tj = 25°C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 200 400
16
12
8
4
0600 800
VCC = 600V
VCC = 400V
IC = 100A
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
td(off)
td(on)
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
tr
tf
102
7
5
3
2
1.0 1.5 2.0
101
72.5 3.0 3.5
3
2
7
5Tj = 25°C
Sep.2000
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.16°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.35°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3