MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD (7 TYP.) G u P Eu P G v P Ev P G wP EwP G u N Eu N G v N Ev N G wN EwN U V W S N P P P R L C J A N N E T K M M U G F M AA M Y - DIA. (4 TYP.) AA TAB #110, t = 0.5 H V P P GuP EuP U GvP EvP V GwP EwP W GuN EuN GvN EvN GwN EwN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking N N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Inches Millimeters A 4.21 107.0 P 0.57 14.5 B 4.02 102.0 Q 0.55 14.0 C 3.5430.01 90.00.25 R 0.47 12.0 D 3.150.01 80.00.25 S 0.43 11.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies E 2.01 51.0 T 0.39 10.0 F 1.38 35.0 U 0.33 8.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100TF-24H is a 1200V (VCES), 100 Ampere Six-IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 100 24 G 1.28 32.5 V 0.30 7.5 H 1.26 Max. 32.0 Max X 0.24 6.0 J 1.18 30.0 Y 0.22 5.5 K 0.98 25.0 Z M5 Metric M5 AA 0.08 2.0 L 0.96 24.5 M 0.79 20.0 N 0.67 17.0 Sep.2000 MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (TC = 25C, Tj 150C) Pc 780 Watts Mounting Torque, M5 Main Terminal - 1.47 ~ 1.96 N*m Mounting Torque, M5 Mounting - 1.47 ~ 1.96 N*m - 830 Grams Viso 2500 Vrms Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V - 2.5 3.4** Volts IC = 100A, VGE = 15V, Tj = 150C - 2.25 - Volts Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V - 500 - nC Emitter-Collector Voltage VEC IE = 100A, VGE = 0V - - 3.5 Volts Test Conditions Min. Typ. Max. Units - - 20 nF VGE = 0V, VCE = 10V - - 7 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres - - 4 nF Resistive Turn-on Delay Time td(on) - - 250 ns Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 600V, IC = 100A, - - 350 ns td(off) VGE1 = VGE2 = 15V, RG = 3.1 - - 300 ns - - 350 ns Diode Reverse Recovery Time trr tf IE = 100A, diE/dt = -200A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = -200A/s - 0.74 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.16 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.35 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.025 C/W Sep.2000 MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE 200 160 15 5 12 VGE = 20V 11 120 10 80 9 40 7 VCE = 10V Tj = 25C Tj = 125C 160 120 80 40 8 0 0 4 6 8 0 10 4 EMITTER CURRENT, IE, (AMPERES) Tj = 25C IC = 200A IC = 100A 4 2 IC = 40A 4 8 12 16 20 3 2 102 7 5 3 2 40 1.5 2.5 2.0 3.0 103 tr VCC = 600V VGE = 15V RG = 3.1 Tj = 125C 103 REVERSE RECOVERY TIME, t rr, (ns) td(on) 102 120 160 200 Cies 101 Coes 100 Irr 101 EMITTER CURRENT, IE, (AMPERES) 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, VGE 102 t rr Cres 10-1 10-1 3.5 101 di/dt = -200A/sec Tj = 25C 101 100 80 VGE = 0V REVERSE RECOVERY CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 0 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 1 CAPACITANCE VS. VCE (TYPICAL) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf td(off) 101 101 2 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 102 3 0 20 Tj = 25C 101 7 1.0 0 0 16 CAPACITANCE, Cies, Coes, Cres, (nF) 7 5 10 6 12 4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 8 8 VGE = 15V Tj = 25C Tj = 125C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM100TF-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.16C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.35C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000