Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 (2.0) (1.5) 2.70.3 3.00.3 1.00.2 0.60.2 Absolute Maximum Ratings TC = 25C 5.450.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -160 V Collector-emitter voltage (Base open) VCEO -140 V Emitter-base voltage (Collector open) VEBO -5 V Collector current IC -8 A Peak collector current ICP -15 A Collector power dissipation PC 120 W Ta = 25C (1.5) 2.00.3 20.00.5 (2.5) Solder Dip (1.5) * Optimum for 110 W HiFi output * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) 3.30.2 (3.0) Features 5.00.3 (3.0) (10.0) (6.0) (2.0) (4.0) 26.00.5 20.00.5 10.90.5 1 2 1: Base 2: Collector 3: Emitter TOP-3L-A1 Package 3 Internal Connection C B 3.5 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C E Electrical Characteristics TC = 25C 3C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = -30 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = -160 V, IE = 0 -100 A Collector-emitter cutoff current (Base open) ICEO VCE = -140 V, IB = 0 -100 A Emitter-base cutoff current (Collector open) IEBO VEB = -5 V, IC = 0 -100 A Forward current transfer ratio hFE1 VCE = -5 V, IC = -1 A 2 000 VCE = -5 V, IC = -7 A 5 000 hFE2 * Conditions Collector-emitter saturation voltage VCE(sat) IC = -7 A, IB = -7 mA Base-emitter saturation voltage VBE(sat) IC = -7 A, IB = -7 mA Min Typ Max -140 Unit V 30 000 -2.5 -3.0 V V fT VCE = -10 V, IC = - 0.5 A, f = 1 MHz 20 Turn-on time ton IC = -7 A, IB1 = -7 mA, IB2 = 7 mA 1.0 s Storage time tstg VCC = -50 V 1.5 s 1.2 s Transition frequency Fall time tf MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q S P 5 000 to 15 000 7 000 to 21 000 8 000 to 30 000 Publication date: March 2003 SJD00079BED 1 2SB1503 PC Ta IC VCE 50 IB=-2mA -10 -8 -1mA -0.9mA -0.8mA -0.7mA -6 -0.6mA -0.5mA -0.4mA -4 -0.3mA -2 (3) 0 0 -0.2mA (2) 40 80 120 0 160 Ambient temperature Ta (C) -2 0 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) TC=-25C -1 25C -1 -10 TC=100C -25C 103 102 -10 1 ton Non repetitive pulse TC=25C -10 t=1ms IC t=10ms DC -1 - 0.1 0.1 -4 -8 -12 - 0.1 - 0.1 -16 - 0.01 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) SJD00079BED -1 -10 -100 Collector current IC (A) IE=0 f=1MHz TC=25C 100 10 1 -1 -10 -100 Collector-base voltage VCB (V) ICP Collector current IC (A) Turn-on time ton , Storage time tstg , Fall time tf (s) -1 Safe operation area -100 tf Collector current IC (A) 2 - 0.1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C 0 -1 Cob VCB 104 10 - 0.01 -100 tstg 0.01 -25C 1 000 25C ton , tstg , tf IC 10 -12 VCE=-5V Collector current IC (A) 100 -10 TC=100C 25C hFE IC -10 - 0.1 - 0.1 -8 105 IC/IB=1000 100C -6 IC/IB=1000 -10 Collector-emitter voltage VCE (V) VBE(sat) IC -100 -4 Collector-emitter saturation voltage VCE(sat) (V) (1) 100 TC=25C Collector output capacitance C (pF) (Common base, input open circuited) ob 150 VCE(sat) IC -100 -12 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=3.5W) Collector current IC (A) Collector power dissipation PC (W) 200 2SB1503 Rth t 103 Thermal resistance Rth (C/W) Note: Rth was measured at Ta=25C and under natural convection. (1)PT=10Vx0.3A(3W) and without heat sink (2)PT=10Vx1.0A(10W) and with a 100x100x2mm Al heat sink 102 (1) 10 (2) 1 10-1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00079BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. 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