Order this document by MJE340/D SEMICONDUCTOR TECHNICAL DATA 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high-voltage general purpose applications. * Suitable for Transformerless, Line-Operated Equipment * Thermopad Construction Provides High Power Dissipation Rating for High Reliability IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIII IIIII IIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 77-08 TO-225AA TYPE MAXIMUM RATINGS Rating Symbol Value Unit VCEO 300 Vdc VEB 3.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 Watts W/_C TJ, Tstg - 65 to + 150 _C Symbol Max Unit JC 6.25 _C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 300 -- Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO -- 100 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 100 Adc hFE 30 240 -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJE340 32 1.0 PD, POWER DISSIPATION (WATTS) 28 TJ = 25C 0.8 V, VOLTAGE (VOLTS) 24 20 16 12 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 MJE340 8.0 0.2 4.0 0 VBE(sat) @ IC/IB = 10 IC/IB = 5.0 20 0 40 80 60 100 120 0 10 160 140 20 TC, CASE TEMPERATURE (C) 30 50 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 2. "On" Voltages Figure 1. Power Temperature Derating ACTIVE-REGION SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMP) 1.0 10 s 0.5 0.3 500 s TJ = 150C dc 0.2 1.0 ms 0.1 0.05 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C SINGLE PULSE 0.03 0.02 0.01 10 50 70 100 200 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 3. MJE340 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 300 hFE , DC CURRENT GAIN 200 VCE = 10 V VCE = 2.0 V TJ = 150C 100 70 +100C 50 + 25C 30 20 10 - 55C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) 70 100 200 300 500 Figure 4. DC Current Gain 2 Motorola Bipolar Power Transistor Device Data MJE340 PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 MJE340 Motorola reserves the right to make changes without further notice to any products herein. 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