SIEMENS BRAT 11, BAT 12, BRT 13 SITAC AC Switches Without Zero Voltage Switch AC switch without zero-voltage detector e Electrically insulated between input and output circuit e Microcomputer-compatible by very low trigger current UL-tested (file no. E 52744), code letter "J" e Available with the following options: Option 1: VDE 0884-approved Option 6: Pins in 10.16 mm spacing Option 7: Pins for sourface mounting Type Opt. | Vorm | 4rams fer dwdi,, Marking | Odering Code BRT 11H |- 400V | 300mA j2mA | 10kKV/us | BRT 11H |C67079-A1000-A6 BRT 11M |- 400V | 300mA | 3mA | 10kV/s | BRT 11M | C67079-A1000-A10 BRT 12H |- 600V | 300mA )2mA /10kV/ps | BAT 12H | C67079-A1001-A6 BRT 12H | 1 600V | 300mA | 2mA | 10kV/ps | BRT 12H | C67079-A1041-A5 BRT 12H |6 600V | 300mA |2mA |10kV/Us | BRT 12H | C67079-A1041-A8 BRT 12H |7 600V | 300mA |2mA | 10kV/Us | BRT 12H | C67079-A1041-A11 BRT 12H |1+6 |600V |300mA /2mA | 10kV/us | BRT 12H | C67079-A1041-A14 BRT 12M |- 600V |300mA {3mMA | 10kV/Us | BRT 12M |C67079-A1001-A10 BRT 12M | 1 600V |300mA /3mA |10kV/us | BRT 12M | C67079-A1041-A6 BRT 13H |- 800V | 300mA |2mA |10kV/us |BRT 13H |C67079-A1002-A6 BRT 13H |6 B800V |300mA |2mA |10kV/us | BRT 13H | C67079-A1042-A8 BRT 13H |7 800V |300mA |2mA |10kV/us | BRT 13H | C67079-A1042-A11 BRT 13M |- BOOV |300mA |3mA |10kV/s | BRT 13M |C67079-A1002-A10 Information Package Pin Configuration 1 2 3 4 5 6 50 pcs per tube | P-DIP-6 | Anode | Kathode; not Al do not A2 connected connect Semiconductor Group 589 09.96SIEMENS BRAT 11, BAT 12, BRT 13 Maximum Ratings, at 7) = 25 C, unless otherwise specified. AC Switch Parameter Symbol Value Unit Max. Power dissipation Pot 630 mw Chip or operating temperature 7j -40 ...4 100 C Storage temperature Tstg -40 ...4 150 Insulation test voltage 1) Vis 5300 Vams between input/output circuit (climate in acc. with DIN 40 046, part 2, Nov. 74) Reference voltage in acc. with VDE 0110 b Veet 500 Vams (insulation group C) 600 Voc Creepage tracking resistance Cry 175 (group Ila (in acc. with DIN IEC 112/VDE 0303, part 1) acc. to DIS VDE 0109 Insulation resistance Fis Q Vio = 500 V, Ta = 25 C > 1012 Vio = 500 V, Ta = 100 C >10"1 DIN humidity category, DIN 40 040 F Creepage distance (input/output circuit) - 27.2 mm Clearance (input/output circuit) - >7.2 Input Circuit Parameter Symbol Value Unit Param VR Va 6 V Continuous forward current Ir 20 mA Surge forward current, FSM() 1.5 A Max. power dissipation, f< 10 ps Prot 30 mw Output Circuit Parameter Symbol | BRT | BRT | BRT | Unit 11 12 13 Repetitive peak off-state voltage VoRM 400 |600 | 800 |v RMS on-state current rams _| 300 mA Single cycle surge current (50 Hz) ASM() 3 A Max. power dissipation Prot 600 mw Semiconductor Group 590SIEMENS BRT 11, BRT 12, BRT 13 Characteristics at Tj = 25 C, unless otherwise specified. Input Circuit Parameter Symbol Values Unit min. | typ. | max. Forward Voltage, = 10 mA Ve - 1.717 1.35 1V Reverse current, Va =6V Ip - - 10 |yA Thermal resistance 1) Ping - - 750 | K/AV junction - ambient Electrical Characteristics Parameter Symbol Values Unit min. | typ. | max. Critical rate of rise of off-state voitage dwidty kV/ps Vp = 0.67 Vor Fj = 25 C 10 - - Tj =80C 5 - - Critical rate of rise of voltage at current dWidberg commutation Vp = 0.67 Vor, ddfrg < 15 A/ms 7) = 25 C 10 - - T, = 80C 5 - - Critical rate of rise of on-state current didt, 8 - Alus Pulse current lp 2 1A fh <5 us, f= 100 Hz, djp/dts< 8 A/us On-state voltage, 4 = 300 mA Vy 2.3 |V Off-state current, To = 100C , Vor I - 0.5 | 100 ;pA Holdin current, Vp = 10 V ly go | 500 Thermal resistance 2) Ainga 125 | K/AV junction - ambient Semiconductor Group 591SIEMENS BRT 11, BRT 12, BRT 13 Response Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Trigger current Iry mA Vp =10V type H 0.4 - 2.0 type M 0.4 - 3.0 Trigger current temperature gradient AleqfAT] - 7 14 | pA/K Capacitance between input and output circuit Cio - |. 2 |pF Va = OV, f= 1 kHz 1) Test AC voltage in acc. with DIN 57883, June 1980. 2) Static air, SITAC soldered in pcb or base plate. 3) The SITAC switch is soldered in pcb or base plate. 4) | Thermocouple measurement has to be performed potentially separated to A1 _ and A2. The measuring junction should be as near as possible at the case. Semiconductor Group 592SIEMENS BRT 11, BRT 12, BRT 13 Package Outline P-DIP-6 6 4 GPp05022 yd 3 , Q.1Smax 1) ~ Clearance/creepage distance / 7592) 7.2min for SIPMOS Devices Index Marking 2) 8.79.2 for SIPMOS Devices Option 6 my B75. 8 7.8 p94 [= skins yess: t#| el 5 ra Fin = os iTiat 4 ACT ry om Pe ose 4 925" 254] | | SPH le =! 10.16202 GPODSSES: -Clearance-/creepage distance 8.0 min. Option 7 e) Bog pe, ~ 7.62 p= Imin 65 | ot) 6.5 9.2} & &t 2 + st a 2 Lo ' 7 8.0min rs , wel 84min 24min st 10.3max ke PD0S356 -Clearance-/creepage distance 8.0 min. Dimensions in mm Clearance and creepage distances must be taken into account for the soider pow! design. Semiconductor Group 593SIEMENS BRT 11, BRT 12, BRT 13 Characteristics at Tj = 25C, unless otherwise specified. Typical input characteristics fr = (VF) 102 BRT tt /12/t3 sicooot 10 io"! 0.9 1.0 1, Vv 42 Current reduction Ams = f(Ta) Pinua = 125 KW) BRT 1 au 125K/W) sicagoas 400 Ap MSA 300 200 100 0 20 40 60 80 "C 100 |, Semiconductor Group Typical output characteristics f= #(V) 193 8! s1c00002 i omA 10? 10! 10 Current reduction Arams = f(Tpins) Ai-pins = 16,5 KAW 4) BRT 11 (Rars-ones= 16.5 K/W) $1C00004 400 f TRWS A 300 200 100 30 60 70 80 90 C 100 Tews 594SIEMENS BRT 11, BRT 12, BRT 13 Typ trigger delay time igg = f( fF / IFT25 C) Power dissipation for 40 ... 60 Hz Vb = 200 V line operation Pot = (rams) 1032 1C00005 oem tt si000007 Fa W 05 0.4 Iga S 10? 0.3 to! 0.2 0.1 10 0.0 1 5 10 5 10? 0 400 200 mA 300 > If Frrasec > fins Typ. off-state current fp = f(T) Pulse trigger current /Ftn = f( IF) Vp = 800 V FTN Normalized to rr referring to bir 2 Ime Von = 220 V, f = 40... 60 Hz typ. 103 @ SICO0008 19 sicadooa ro 107! ; 0 2 840 6H BOK 100 10" 5 10 us 10 _. y _ fur Semiconductor Group 595