TELEDYNE COMPONENTS 266 D @@ 491740c OO0b44e 3 mf T-29-25 _ TlOoyleldA\ ZZ VPOIO04, VPOIO6 SEMICONDUCTOR VPOIO9 P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION _TO-226AA (TO-92) Plastic Package VPO104N3 - VPOTOBN3 VPOI09N3 Sorted Chips In Watfie Pack VPO104ND VPO106ND VPO109ND Deacription. ~40V, 8.0 ohm -60V, 8.0 ohm. -90V, 8.0 ohm FEATURES APPLICATIONS M@ Gate Standoff Voltage, +40V min m@ Complementary Voltage and Current Drivers @ Low Output and Transfer Capacitances @ Line Drivers @ Extended Safe Operating Area @ Pulse Amplifiers @ Complementary N-Channel Devices Available @ Solid-State Relays ABSOLUTE MAXIMUM RATINGS (1, = +25C unless otherwise specified) Drain-Source Voltage Continuous Device Dissipation VPOI04 cocci cece c ete eset e ete en eee nen ene -40V TA= +25C To = + 25C VPOTOS cic c cece c eect e ete eee eee eteeaeeeens -60V TO-92(N3)pkg. 0.30W 1.0W VPOTOD coe cece nce c ec ete enter en eeneeene ~90V Linear Derating Factor Drain-Gate Voltage (Vgs = 0) Ta= +25C To= + 25C VPOIOS coc ccc cece cee cee e eet e rent eenee -40V TO-92(N3)pkg. 3.0mMWIPC 10mMWIPG Ai 1: -60V Operating Junction and Storage Temperature VPOTOD ricci e cece tee eter ete een een n eens -90V Range 2... cc ces cca cere terteeence -55C to + 150C Gate-Source Voltage 0... cece cece seer nena + 40V Lead Temperature (1/16" from mounting surface Continuous Drain Current for 30SEC.) cise ee eee cccenscaesencaneeoes + 260C Ta= +25C To= + 25C TOQ-92(N3)pkg. ~14A ~.26A Peak Pulsed Drain Currant ....ccc cece cece cera eee -0.54 PIN CONFIGURATION PACKAGE DIMENSIONS CHIP CONFIGURATION (10-92) TO-226A (See Package 5) Drain t.. { Gate ; | _! Source Sa BD Dimensions: .054 x .054 x .020 in. Ail dimensions in inches and (millimeters) Drain Is backside contact 3-149 0-88-6 4283 E-08 oe. : = > 7 7 = TELEDYNE COMPONENTS 26E D MM 8917602 OO0L483 5 ma | TORAZ T-29-25 VPO1O4, VPOIOS SEMICONDUCTOR VPOIO9 | ELECTRICAL CHARACTERISTICS (Ta = + 25C unless otherwise specified) | Draln-Source . -60 Ip =-1.0MA, Vag =0 Ast Drain-Source = Off Leakage Current MIN CONDITIONS Ves =0 + Vos =0 st Gate-Source . . R . Vos=Vas, lp =-1.0mA Threshotd Draln-Source =-0.1A On = On Draln Current . E . , 5 , Vos = Gate-Body Vi (Note } Vos = -25V, Ip = -0.5A Source-Drain . . Igp =-1.0A, Vag =0 Common-Source Common-Source Vps = -28V Ves =0 Common-Source f=1MHz Reverse Transfer Time 5. ; . Vpp = -28V, Vejon) = -10V urn A = =512 NOTE 1: Pules Test, S0uSec, 1% Duty Cycle 3-150 4284 E-09 COeee nee a Tne TELEDYNE COMPONENTS C6E D MM 85917602 GOokYSsy 7 = TOoEAZ VPOIO4, VPO106 SEMICONDUGTOR T=29~25 VPO1O9 TYPICAL PERFORMANCE CHARACTERISTICS (Ta = + 25C unless otherwise specified) DRAIN-SOURCE ON RESISTANCE GATE-SOURCE VOLTAGE ON VOLTAGE CHARACTERISTICS 4 -7.0 . @ Ip = -0.5A = 12/-PULSE TEST ~ 6.0 & 80uSec 2 & 1% DUTY CYCLE 3s . Ss 10 J -5.0 yo - . a 3 g ~~ =z 380 S -4.0 J z \ o \ ~~] 2 9 3 =-0. ; 60 | B -30 Ip=-0.6A 5 Axe gs B 40 = ~ a -20 Ip=-0.14[ a I Tas + 26C 8 | & 2, -1,0 |. PULSE TESTS aR 20 80uSec \ f 1% DUTY CELE 0 2.0 -40 -6.0 -80 -10 -12 0-14 0 -20 -40 -60 -80 -10 ~12 14 VasgGate-Source Voitage(Valts) Ves~Gate-Source Voitage(Volts) a. ON DRAIN CURRENT FORWARD TRANSCONDUCTANCE oe VS vVs : GATE SOURCE VOLTAGE ON DRAIN CURRENT : 1.4 350 - Vog = -25V e -1,3 |. PULSE TESTS. 2 300 . es 80:.Sec Laem _ 1% DUTY CYCLE E a < -1.0 4 280 Le * 2 & J o oO g -08 3 200 y Qo e . & 8 / 5 06 Ta= +25C E 160 12 $ 2 - b -6.4 f $ 100 Vos = -25V a J eg t= 1KHz 6.2 J | 50 PULSE TEST___| a BOuSec = | 7s - Ta= +125C 1% DUTY CYCLE - : Dt f ! | | 0 -10 -20 -30 ~-40 -5.0 -60 -7.0 0 02 -04 -06 -08 -1.0 -12 -1.4 Vas~Gate-Source Voltage(Volts) IpDrain Current(Amps) 3-151 4285 E~10 Foo ee