Semiconductor Group 1 Nov-26-1996
BCR 35PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R1=10kΩ, R2=47kΩ)
Tape loading orientation
Type Marking Ordering Code Pin Configuration Package
BCR 35PN WUs Q62702-C2495 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 50 V
Collector-base voltage
V
CBO 50
Emitter-base voltage
V
EBO 6
Input on Voltage
V
i(on) 20
DC collector current
I
C 100 mA
Total power dissipation,
T
S = 115°C
P
tot 250 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 275 K/W
Junction - soldering point
R
thJS ≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Nov-26-1996
BCR 35PN
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 100 µA,
I
B = 0
V
(BR)CEO 50 - - V
Collector-base breakdown voltage
I
C = 10 µA,
I
B = 0
V
(BR)CBO 50 - -
Collector cutoff current
V
CB = 40 V,
I
E = 0
I
CBO - - 100 nA
Emitter cutoff current
V
EB = 6 V,
I
C = 0
I
EBO - - 167 µA
DC current gain
I
C = 5 mA,
V
CE = 5 V
h
FE 70 - - -
Collector-emitter saturation voltage 1)
I
C = 10 mA,
I
B = 0.5 mA
V
CEsat - - 0.3 mV
Input off voltage
I
C = 100 µA,
V
CE = 5 V
V
i(off) 0.5 - 1 V
Input on Voltage
I
C = 2 mA,
V
CE = 0.3 V
V
i(on) 0.5 - 1.4
Input resistor
R
1 7 10 13 kΩ
Resistor ratio
R
1/
R
2 0.19 0.21 0.24 -
AC Characteristics for NPN Type
Transition frequency
I
C = 10 mA,
V
CE = 5 V,
f
= 100 MHz
f
T
- 150 - MHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 2 - pF
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 3 Nov-26-1996
BCR 35PN
NPN TYPE
DC Current Gain
h
FE =
f (I
C)
V
CE = 5V (common emitter configuration)
10 -1 10 0 10 1 mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat =
f
(
I
C),
h
FE = 20
0.0 0.2 0.4 0.6 V 1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage
V
i(on) =
f
(
I
C)
V
CE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off) =
f
(
I
C)
V
CE = 5V (common emitter configuration)
0.0 0.5 1.0 V 2.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Semiconductor Group 4 Nov-26-1996
BCR 35PN
PNP TYPE
DC Current Gain
h
FE =
f (I
C)
V
CE = 5V (common emitter configuration)
10 -1 10 0 10 1 mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat =
f
(
I
C),
h
FE = 20
0.0 0.2 0.4 0.6 V 1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage
V
i(on) =
f
(
I
C)
V
CE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off) =
f
(
I
C)
V
CE = 5V (common emitter configuration)
0.0 0.5 1.0 V 2.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Semiconductor Group 5 Nov-26-1996
BCR 35PN
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
020 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
A
T
S
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
