File No. 268 URC Solid State Division RF Power Transistors 2N5070 Features: gain: 13 dB JEDEC TO-60 4.1307 RCA2N50708 is an epitaxial silicon n-p-n planar transistor of the overlay emitter-electrode construction. It is especially designed for linear applications to provide high power in class A or class B service. This device is intended for 2-to-30-MHz single-sideband power amplifiers operating from a 28-volt power supply. The inherent high-frequency capability of the overlay MAXIMUM RATINGS, Absolute-Maximum Values: Silicon N-P-N Overlay Transistor For High-Frequency Single-Sideband Communications Equipment Suitable for class A or class B amplifiers m 25 W PEP output min. at 30 MHz with ni 40% min., IMD: 30 dB max. m= Low thermal resistance structure together with individually ballasted emitter sites makes it possible to forward-bias the device into the active region without incurring thermal instability. The emitter pin is common to the case to minimize lead inductance. Formerly RCA Dev. No. TA2793. *COLLECTOR-TO-BASE VOLTAGE ......-. 0-0 cece eee renee VcBo 65 v COLLECTOR-TO-EMITTER VOLTAGE: With base-emitter junction reverse-biased (Vge) =-1.5V ......- Vcev 65 v With external base-to-emitter resistance (Rpg) = 5Q .......-..- VCER 40 Vv * With base open ...... 2. eee cece eee eee ete eeeees VcEO 30 Vv *EMITTER-TO-BASE VOLTAGE... 02. ec eee eee eee eee eee VERO 4 Vv *COLLECTOR CURRENT: Ic Continuous 2.6.2... ee ene e eens 3.3 A | 10 A *CONTINUOUS BASE CURRENT ..........00e cee neceeeeees Ip j *TRANSISTOR DISSIPATION: Py At case temperatures up to 25C . 0... ke eee eee eee eee 70 WwW At case temperatures above 25C ...... ec cece cee eee eee See Fig. 2 *TEMPERATURE RANGE: Storage and operating (junction) ........-..-.02 0c eee eee eee ~65 to 200 c *LEAD TEMPERATURE (During soldering): At distances > 1/32 in. (0.8 mm) from insulating wafer for JOS Max. occ cece cece tee eee eee eee teeta ee 230 C *In accordance with JEDEC registration data 100 6-72File No. 268 2N5070 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25 C unless otherwise specified TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS Vdc mA de Vcs | Vce | Vee lE Ip Ic MIN. MAX. Collector Cutoff Current: With base-emitter junction reverse-biased t | 60 -1.5 _ 10 At Tc = 150C CEV 60 | -1.5 - 10 | a With emitter open IcBo 60 0 _ 10 With base open lcEO 30 0 - 5 Emitter Cutoff Current leBo 4 _ 10 mA Collector-to-Emitter Sustaining Voltage: With base-emitter junction -1.5 200? 65 - reverse-biased Veev (sus) Vv With base open VcEolsus) 0 | 2008 30 - With external base-to-emitter 2004 4 - resistance (RgF) = 52 Voer|sus) Emitter-to-Base 0 - Vv Breakdown Voltage V(BR)EBO ' 4 DC Forward Current h 5 3000 10 100 Transfer Ratio FE 5 1000 | 20 - Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer hfe! 18 1000 2 ~ Ratio (f = 50 MHz) Output Capacitance (f = 1 MHz) Cob 30 0 - 85 pF Available Amplifier Signal Input Power 1.25 Ww (See Fig. 8) Pi - PEP 2g = 50, Py = 25 WIPEP) 1 = 30 MHz, fg = 30.001 MHz Intermodulation Distortion ZG = 50Q, Py = 25 W(PEP) IMD - 30 dB #1 = 30 MHz, fg = 30.001 MHz Collector Efficiency Zg = 50, Py = 25 W(PEP) 7c 40 _ % 1 = 30 MHz, fg = 30.001 MHz Thermal Resistance | o Junction-to-Case ReJc ~ 25 c/w *In accordance with JEDEC registration data format Pulsed through a 25-mH inductor; duty factor = 50% 1012N5070 File No. 268 COLLECTOR SUPPLY VOLTAGE (Voc) = 28 V FREQUENCIES (TWO-TONE) = 30 MHz, 30.001 MHz 0} COLLECTOR QUIESCENT CURRENT (icq) = 20 mA CASE TEMPERATURE (Tc) = 25 C OR UP TO 75 C r--] os 1 Ss = z 2 = a o 6 2 a z Ss E < a > a Ss = = wo 5 z MAXIMUM TRANSISTOR DISSIPATION (Py) W RF POWER OUTPUT (Poyr) - W (PEP) 250 92LS-1B77RI CASE TEMPERATURE (Tc) - C 92Ls-1as2R2 Fig. tTypical intermodulation distortion vs. rf power output. Fig. 2Dissipation derating chart. 10] CASE TEMPERATURE (Tc)=100e fs Tt dT | = | NOTE! Tyg IS DETERMINED BY _| FREQUENCIES (TWO-TONE) =30 MHz , 30.001 MHz t Use OF INFRARED QUIESCENT COLLECTOR CURRENT +20 mA 4 TECHNIQUE 50{/CASE TEMPERATURE (Te) = 25C tT 4}- Ig MAX. e a a NX oO EQ HOT=SPOT TEMPERATURE > & (Tyg) #200C 2 So 5 f = ire 5s > 5 B S 4 5 a 4 rr 3 ceo 3 LIMITED 5 ou 1 0 100 COLLECTOR-TO-EMITTER VOLTAGE (Vop)V OUTPUT POWER (Pog) W(PEP) 92CS-19139 92LS: !8BORE Fig. 4Typical collector efficiency vs. rf Fig. 3-Safe operation with de forward bias. power output, FREQUENCIES (TWO-TONE) = 30 MHz, 30.001 MHz COLLECTOR QUIESCENT CURRENT (Iq)= 20mA = IMD = 30 dB CASE TEMPERATURE (Tc) = 25C COLLECTOR SUPPLY VOLT: (Voc) = 2 FREQUENCIES (TWO-TONE) = 30 MHz, 30.001 MHz COLLECTOR QUIESCENT CURRENT (ig) = 20 mA ul o 2 = = I a. a 2 < 8 2 OE = = 3 | Ss ~ 1 e 5 Ee o E So SOE =z Ee a 6 z = 5 6 E z = E & S > s oe ao S & 6 = Gi 6S =x = a 5S = o ww oe iog 2102 10 40 60 a0 100 120 140 CASE TEMPERATURE (Tc) - C COLLECTOR SUPPLY VOLTAGE (Vec) + 92LS-1881RI 92LS-18B3R2 Fig. 5Typical rf power output and inter- modulation distortion vs. case tem- Fig. GTypical rf power output vs. collector perature. supply voltage. 102File No. 268 ty: Lo: L3: Cy: Co: C3: Yep (NOTE I) (NOTE 2) fe Ry 4 2N5070 COLLECTOR SUPPLY VOLTAGE (Vcc) *28V 8] CASE TEMPERATURE (To) = 25C 4 e f 100 > 8 8 6 Bb o4 = Ww & ge 2 & 10 8 go 6 a aqdo4 oO 0.3 0.4 05 0.6 07 0.8 0.9 10 BASE-TO-EMITTER VOLTAGE (Vge)-V 92LS~ 2153RI Fig. 7Typical transfer characteristics. Note 1: Adjust Vpp for a collector quiescent current of 3T No. 12 wire, 1/4 in. (6.35 mm) ID, 1/2 in. {12.7 mm) tong 6T No. 14 wire, 3/8 in. (9.52 mm} 1D, 3/4 in. (19.05 mm} long 5T No. 10 wire,3/4 in. (19.05 mm) 1D, 3/4 in. (19.05 mm) long 140-680 pF, Arco 468 or equivalent 170-780 pF, Arco 469 or equivalent 0.05 nF, ceramic Ry: Ro: RFC: 921.5-1878R3 : 0.1 wF, ceramic : 1000 pF feedthrough : 24-200 pE Arco 425 or equivalent + 32-250 pF Arco 426 or equivalent 19,6W 500, 25 W 350 Ferrite choke, Ferroxcube #VK200 01-03B or equivalent 20 mA with no rf input signal. Note 2: Impedance measurements are made at transistor socket Pins. Single-Sideband Suppressed-Carrier Service Peak envelope conditions for a signal having a min- imum peak-to-average power ratio of 2. Test Operation in test circuit shown, with Two-Tone Modutation, at T = 30 C, and at 30 MHz. Collector Supply Voltage Collector Bias Current RF Power Output: Average Peak Envelope... 2... ....0.0 000 ce pees Intermodulation Distortion Collector Efficiency... ........0...0.2222006 @Referenced to either of the two tones and without the use of feedback to enhance linearity. Fig. 8Linear rf amplifier circuit for power output test at 30 MHz, 1032N5070 File No. 268 DIMENSIONAL OUTLINE JEDEC TO-60 INCHES MILLIMETERS | 4166 : symBot] MIN. | MAX. | MIN. | MAX. A | 0215 | 0.320 | 5.46 | 38.13 | - Ay - lows | - 4.19 2 b | 0.030 | 0.046 | 0.762] 1.17 4 ~ ed =| 0.360 | 0.437 | 9.14 | 11.10 2 @D, | 0.320 | 0.360 | 813 | 9.14 | 0.424 | 0.437 | 10.77 | 11.10 e 0.185 | 0.215 | 4.70 | 5.46 e, [0.090 | 0110 | 229 | 2.79 F {0.090 | 0.135 | 229 | 3.43 1 J 0.395 | 0.480 | 9.02 | 12.19 om | 0.163 | 0.189 | 4.14 | 4.80 N | 0.375 | 0455 | 953 | 11.56 J Ny - |o078 ) - 1.98 ow | 0.1658 | 0.1697] 4.212} 4310] 3,5 NOTES: 4, Dimension does not include sealing flanges Brae 2. Package contour optional within dimensions specified 3. Pitch diameter 10-32 UNF 2A thread (coated) 4. Pin spacing perimts insertion in any socket having a pin-circte diameter of 0.200 in. (5.08 mm) and con- tacts which will accommodate pins with a diameter of 0.030 in. (0.762 mm) min., 0.046 in. (1.17mm) max. 5. The torque applied to a 10-32 hex nut assembled on the 92C8-18019 thread during instaltation should not exceed 12 inch- _ junds. TERMINAL CONNECTIONS pe Pin No. 1 Emitter Pin No. 2 Base Pin No. 3 Collector 104