SILICON PLANAR NPN HIGH-CURRENT, GENERAL PURPOSE TRANSISTOR The BFX34 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies relay drivers, inverters. ABSOLUTE MAXIMUM RATINGS Vecso Collector-base voltage (I; = 0) 120 Vv VecEo Collector-emitter voltage (Ig = 0) 60 Vv VeBo Emitter-base voltage (Ic = 0) 6 Vv c Collector current 5 A Prot Total power dissipation at Tamp 25C 0.87 Ww at Tease < 25C 5 Ww Tsig, 1; | Storage and junction temperature ~55 to 200 C MECHANICAL DATA Dimensions in mm 77 7/76THERMAL DATA Rtn j-case Thermal resistance junction-case max 35 = C/N Rtn jamb Thermal resistance junction-ambient max 201 C/W ELECTRICAL CHARACTERISTICS (T,,,, = 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.! Unit lees Collector cutoff current (Vpe =0) | Vee = 60V 0.02 10; WA lego Emitter cutoff current (le = Q) Veg =4V 0.05 10; vA Vipr)cBo Coliector-base breakdown voitage | Ile = 5mA 120 Vv (le =0) Veceo (sus) _Collector-emitter sustaining voltage le = 100mA 60 Vv (lg = 0) Vipr) EBO Emitter-base breakdown voltage | le = 1mMA 6 Vv (tc = 0) Voce (sat) Collector-emitter saturation voltage Ic =5A lp =O0.5A 0.4 i| Vv Vee (sat) _ Base-emitter saturation voltage | Ic =5A Ip =O.5A 13 16] V hee DC current gain le = 1A Vee = 2V 100 - 1G =1.5A Vee = 0.6V 75 > le = 2A Vee = 2V! 40 80 150 _ fr Transition frequency Ig =O5A Vee =5V f = 20 MHz 70 ~=100 MHz CEBo Emitter-base capacitance lc= Veg = 0.5V f = 1MHz 300 500] pF Copo Collector-base capacitance lp =0 Veg = 10V f = 1MHz 40 100] pF ton Turn-on time lc =5A lg; =O0.5A 0.25 06) us tort Turn-off time lc =5A le, =-lgo =0.5A 06 1.2) ps *Pulsed: pulse duration = 300 us, duty cycle = 1% 78Output characteristics 2 o o it > a I - COLLECTOR CURRENT - Amp 2 nN Veg - COLLECTOR VOLTAGE - Volt DC current gain hee - DC PULSE CURRENT GAIN Ic - COLLECTOR CURRENT - mA Output characteristics bud 2 50.8 be =z 0.6 m m0. = QO a 20.4 oO iu) wd 80.2 2 lmA 0 Ig =O 0 0.2 : 0.6 Voge > COLLECTOR VOLTAGE : Volt Collector-emitter saturation voltage 10 Ic = Wg 01 0.01 0.1 Veg (sad - COLLECTOR SATURATION VOLTAGE - Volts Ic - COLLECTOR CURRENT - Amps.ASE SATURATION VOLTAGE - Voits 3 2 a ats Vee Ss 2 2 o N 2 2 Base~emitter saturation voltage fle = Dt 2 2 le - COLLECTOR CURRENT - Amps Emitter~base and collector-base capa- citances 1000 CAPACITANCE - pF 0.1 0.1 1 REVERSE BIAS VOLTAGE - Volts 10 1 High frequency current gain f = 20MHz npg - HIGH FREQUENCY CURRENT GAIN 9 5 0.0] 21 1 ic + COLLECTOR CURRENT - Amps. Safe operating areas we PERM SS RE EXTENSION CE Peeks OPERATION 1 r 1 t Ing Tgp Ml base 25C 100 80