INTERSIL FEATURES 2N4044, 2N4045, 2N4100, 2N4878, 2N4879, 2N4880 Dual Monolithic Matched NPN Silicon Planar @ High Gain At Low Current hee 2 200 @ 10 uA @ Low Output Capacitance Cobo @ hee Match hee, HEED < 10% Tight Vee Tracking < 0.8 pF A (Vge, ~ Vpeg) <3 HVC -85C to +125C e Dielectrically isolated matched pairs for differential amplifiers. ABSOLUTE MAXIMUM RATINGS @ 25C {unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation To-71 -65C to +200C +200C TO-78 ONE SIDE | BOTH SIDES ONE 'S!DE | BOTH SIDES Total Dissipation at 25C tt Case Temperature 0.3 Wart 0.5 Wa 0.4 Watt 0.75 Watt Derating Factor 1.7mwi 2.9mwhC 2.3miv/c | 4.3mw?C 2N4044 2N4100 2N4045 2N4878 2N4879 2N4880 Transistors PIN CONFIGURATION TO-71 TO-78 CHIP TOPOGRAPHY 4000 by. ---O21.__4f 025 [COLLECTOR =2 .0030 0030 ft F-COLLECTOR =1 O15 5 q TYP.2PLACES p049" 0040 * 4 [BASE =2 Verso Collector to Base Voltage 60 Vv 55 V 45V TYP. 2 PLACES .0030 Vceo Collector to Emitter Voltage 60V 55V 45v EMITTER <2 ooag OA Veso Emitter to Base Voltage (Note 2) 7V 7 TV BASE =1 TYP. 2PLACES .0030 py), Veco Collector to Collector Voltage 100 V 100 V 100 v EMITTER =i 0040 ' Collector Current TOA 10mA 10mA ORDERING INFORMATION TO-78 TO-71 WAFER DICE 2N4044 2N4044/w 2N4044/0 2N4045 2N4045/w 2N4045/D | 2N4100 2N4100/W 2N4100/0 2N4878 2N4879 2N4880 ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) \ 2N4044 2N4100 2N4045 PARAMETER 2N4878 2N4879 2N4880 UNIT TEST CONDITIONS MIN | MAX | MIN | MAX | MIN | MAX hee OC Current Gain 200 | 600 | 150 | 600 80 | 800 I = 10 vA, Vog = 5V hre DC Current Gain 225 175 100 [le = 1.0 mA, Voce =5V hrel-55C) DC Current Gain 75 80 30 I = 10 HA, VcE =5 V VBE(on} Emitter-Base On Voltage 07 0.7 0.7 Vv Ic = 10 pA, Voce = 5 V VCE (sat) Collector Saturation Voltage 0.35 0.35 0.35 Vv I = 1.0 mA, Ig = 0.1 mA IcBo Collector Cutoff Current 0.1 0.1 Q.t nA. | le =0, Veg = 45 V,30 VV" tcBO(+150C) Collector Cutoff Current 0.1 0.1 0.1 uA | te =0, Veg = 45 V, 30 V* lego Emitter Cutoff Current 0.1 0.1 0.1 nA }ic=0, VEeRBtSV Cobo Output Capacitance 0.8 0.8 0.8 pF le =0,Vcp=5V 1-622N4044, 2N4045, 2N4100, 2N4878, 2N4879, 2N4880 ELECTRICAL CHARACTERISTICS (25C: unless otherwise noted) 2N4044 2N4100 2N4045 PARAMETER 2N4878 2N4879 2N4880 UNIT TEST CONDITIONS NIN | MAX | MIN | MAX | MIN | MAX Emitter Transition Cre Capacitance 1 1 1 pF | lo = 0, Veg = 0.5V Collector to Collector Coy, Ce Capacitance 0.8 0.8 0.8 | PF | Vcc =0 Coliector to Collector Ic4, Co Leakage Current 5 5 5 pA | Voc = + 100V Collector to Emitter Voeo(sust) Sustaining Voitage 60 55 45 V_ Lig = 1mA, Ig = 0 Current Gain Bandwidth tr Product 200 150 150 MHz | ig = 1mA, Voge = 10V Current Gain Bandwidth ft Product 20 15 15 MHz | I = 104A, Voce = 10V Io = 10pA, V, = 5V|f =1kHz NF Narrow Band Noise Figure 2 3 3 dB a 10 kohme BW=200 Hz iG = f = Collector Base Breakdown BVcBo Voltage 60 55 45 Vv Ico = 10uA, lp = 0 Emitter Base Breakdown BYeBo Voitage 7 7 7 Vv le = 10nA, Io = 0 MATCHING CHARACTERISTICS (25C unless otherwise noted) DC Current Gain Ratio Io = 104A to 1mA, hee, rE, (Note 3) 09 | 1 | 0.85 os | 1 Vor = 5V Base Emitter Voitage \Vee,-Veegl Differential 3 5 5 mV | Io = 10x, Vog = 5V [Ip4-tpol Base Current - _ Pe Differential | 8 10 25 | MA | Ic = 10uA, Vee = SV Base Current Ig = 104A, |A(Vee,-VBe,)|/C Differential Voge = 5V Voltage Differential 3 5 10 =| wvic Change with . Ta= 55C Temperature . to +125C . Io = 10pA, Allg,-lg,)|/C Base Current _ Alley lee Differential 03 os 1 laarc Voce = 5V Change with . . Ta= 55C Temperature to +126C SMALL SIGNAL CHARACTERISTICS PARAMETER VALUES UNIT TEST CONDITIONS hip Input Resistance 28 ohms Io = 1MA, Vog = SV hr Voltage Feedback Ratio : 43 x 10-4 Io = 1MA, Vop = 5V Ne Small Signai Current Gain 250 Io = IMA, Vog = 5V hop Output Conductance 0.6 x 10-mhos Ico = IMA, Vog = 5V Ne Input Resistance 9.6 k ohms Ic = IMA, Vop = 5V Nre Voltage Feedback Ratio 4.2 _x 1074 (Ic = 1MA, Vop = 5V Noe Output Conductance 12 mhos ig = IMA, Vog = 5V NOTES: 1. These ratings are limiting values above which the serviceability of arly semiconductor device may be impaired. 2. The reverse base-to-enter voltage must never exceed //.0 volts and the reverse base-to-emitter current must never exceed 10 zamps. 3. The lowest of two hr_ readings Is taken as hee, for purposes of this ratio. 1-63