Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 FEATURES MARKING PINNING e Small plastic SMD package pl asi Pp g TYPE NUMBER MARKING PIN DESCRIPTION e High switching speed: max. 4 ns CODE 1 anode (a1) e Continuous reverse voltage: PMBD2837 pAS 2 anode (a2) max. 30 V and 50 V respectively PMBD2838 pA6 3 common cathode Repetitive peak reverse voltage: max. 35 V and 75 V respectively e Repetitive peak forward current: max. 450 mA. 2 APPLICATIONS e High-speed switching in e.g. 2 1 surface mounted circuits. nm 3 DESCRIPTION L_I3 Top view MAM 108 The PMD2837, PMD2838 consist of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in smalt plastic SMD SOT23 packages. 1996 Sep 18 Fig.1 Simplified outline (SOT23) and symbol. 1-251Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode Vrrm repetitive peak reverse voltage PMBD2837 ~ 35 =|V PMBD2838 ~ 75 =\V Va continuous reverse voltage PMBD2837 ~ 30 IV PMBD2838 - 50 |V lr continuous forward current single diode loaded; see Fig.2; - 215 mA note 1 double diode loaded; see Fig.2; - 125 (mA note 1 leRM repetitive peak forward current 450 |mA lesm non-repetitive peak forward current | square wave; T; = 25 C prior to surge; see Fig.4 t=1ps - 4 |A t=1ms - 1 A t=1s - 0.5 \A Prot total power dissipation Tamp = 25 C; note 1 - 250 | mW Tstg storage temperature -65 +150 C T junction temperature - 150 |(C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 1-252Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS | min. | MAX. | UNIT Per diode Ve forward voltage see Fig.3 le=1mA ~ 715 mV Ip =10mA - 855 mV lp = 50 mA - 1 Vv Ip = 150 mA ~ 1.25 |V In reverse current see Fig.5 PMBD2837 Vra=30V = 100 nA Vr = 30 V; Tj = 150 C ~ 40 pA PMBD2838 Vra=50V - 100 nA Vr = 50 V; Tj = 150C - 50 pA Cy diode capacitance f= 1 MHz; Vp = 0; see Fig.6 - 2.5 |pF tr reverse recovery time when switched from I; = 10 mA to - 4 ns In = 10 mA; Ry = 100 Q; measured at I; = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ir = 10 mA; - 1.75 |V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Rit j-tp thermal resistance from junction to tie-point 360 K/W Rihj-a thermal resistance from junction to ambient | note 1 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 1-253Sia By a toes AE ot Philips. Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 GRAPHICAL DATA IF (mA) 200 single diode loaded double diode loaded 9 100 200 Tamb (C) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 'F (mA) 200 Ve (V) 2 (1) T= 150 C; typical vatues. (2) T, = 25 C; typical values. (3) T; = 25 C; maximum values. Fig.3 Forward current as a function of forward voltage. 'FoM (A) 1071 1 10 Based on square wave currents. T; = 25 C prior to surge. 107 10% 104 ty (us) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 1 - 254Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 MBG375 108 ly (nA) 100 7 C) 200 (1) VR = 50 V; maximum values. (2) Vp = 50 V; typical values. (3) Vp = 30 V; typical values. Fig.5 Reverse current as a function of junction temperature. MBG446 0.8 (pF) 0.6 0.4 0.2 Vay) 8 f= 1 MHz; T; = 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 18 1-255Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 tr tp Fig.8 Forward recovery voitage test circuit and waveforms. | 10% 27 =50Q I +1 t As L _y | SAMPLING F " t Tq TTT OSCILLOSCOPE V=VatipxAg R= 50 0 {4 1 | | Va 90% qd) MGAB6T input signal output signal (1) Ip=1 mA, Fig.7 Reverse recovery voltage test circuit and waveforms. ~. ka 450 0 V oo 90% t Aig= 60 2 OSCILLOSCOPE Vir J | R,=50 2 10% MGAg8Z rd t ty tp1 input output signal signal 1996 Sep 18 1- 256