© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ250 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C42A
IDM TC= 25°C, pulse width limited by TJM 110 A
IAR TC= 25°C42A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-220 4 g
TO-263 3 g
G = Gate D = Drain
S = Source TAB = Drain
DS99157E(12/05)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 250 V
VGS(th) VDS = VGS, ID = 250µA 3.0 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 84 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
TO-3P (IXTQ)
TO-220 (IXTP)
G
DS(TAB)
D(TAB)
G
S
IXTA 42N25P
IXTP 42N25P
IXTQ 42N25P
VDSS = 250 V
ID25 = 42 A
RDS(on) ≤≤
≤≤
≤ 84 mΩΩ
ΩΩ
Ω
TO-263 (IXTA)
GS
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 12 20 S
Ciss 2300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 430 pF
Crss 115 pF
td(on) 24 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 28 ns
td(off) RG = 10 Ω (External) 81 ns
tf30 ns
Qg(on) 70 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 nC
Qgd 37 nC
RthJC 0.42°C/W
RthCS (TO-3P) 0.21 °C/W
(TO-220) 0.25 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 42 A
ISM Repetitive 110 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A 200 ns
-di/dt = 100 A/µs
QRM VR = 100 V 2.0 µC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-263 (IXTA) Outline
© 2006 IXYS All rights reserved
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
110
0369121518212427
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
8V
9V
Fig. 3. Output Characte ristics
@ 125ºC
0
5
10
15
20
25
30
35
40
45
0123456789
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characte ristics
@ 25
º
C
0
5
10
15
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3 3.5 4
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 4. R
DS(on)
Norm alized to 0.5 I
D25
Value vs . Junction Tem pe rature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
I
D
= 42A
I
D
= 21A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
45
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs . I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
0 102030405060708090100110
I
D
- Amperes
R
D S ( o n )
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 10203040506070
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 125V
I
D
= 21A
I
G
= 10mA
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
44.555.5 66.577.5 88.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
3
6
9
12
15
18
21
24
27
30
0 102030405060708090
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
15
30
45
60
75
90
105
120
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS( on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 13. Maxim um Transient Therm al Resistance
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
1101001000
Pulse Width - milliseconds
R ( t h ) J C
- ºC / W
