ST180SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 200 A FEATURES * Center amplifying gate * International standard case TO-209AB (TO-93) RoHS * Hermetic metal case with ceramic insulator COMPLIANT (Also available with glass-metal seal up to 1200 V) * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling * Lead (Pb)-free TO-209AB (TO-93) * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY * DC motor controls IT(AV) 200 A * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 200 A 85 C 314 A 50 Hz 5000 60 Hz 5230 50 Hz 125 60 Hz 114 A ITSM I2 t VDRM/VRRM Typical tq TJ kA2s 400 to 2000 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST180S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 Document Number: 94397 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 30 www.vishay.com 1 ST180SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 200 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS 180 conduction, half sine wave I2t 85 C t = 10 ms 5000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing A 314 t = 10 ms I2 t UNITS 200 DC at 76 C case temperature t = 8.3 ms Maximum I2t for fusing VALUES No voltage reapplied 100 % VRRM reapplied No voltage reapplied 5230 Sinusoidal half wave, initial TJ = TJ maximum 4400 125 114 88 100 % VRRM reapplied 1250 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.08 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.14 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.14 Ipk = 570 A, TJ = 125 C, tp = 10 ms sine pulse 1.75 VTM Maximum holding current IH Maximum (typical) latching current IL kA2s 81 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 4200 600 TJ = TJ maximum, anode supply 12 V resistive load 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94397 Revision: 11-Aug-08 ST180SPbF Series Phase Control Thyristors (Stud Version), 200 A Vishay High Power Products TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range SYMBOL TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs DC operation 0.105 Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) C K/W Mounting torque, 10 % Approximate weight N*m (lbf in) 280 Case style See dimensions - link at the end of datasheeet g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.015 0.012 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94397 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST180SPbF Series Vishay High Power Products Phase Control Thyristors Maximum Allowable Case Temperature (C) 130 ST180S Series RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 30 100 60 90 120 90 180 80 0 40 80 120 160 200 240 130 ST180S Series R thJC (DC) = 0.105 K/ W 120 110 Conduc tion Period 100 90 30 80 60 90 120 180 DC 70 0 50 100 150 200 250 300 350 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 W K/ K/ W K/ W ta el -D RMSLimit 0.4 K/ W 150 Conduc tion Angle 0.5 K/ W 0.8 K/ W 1.2 K /W 100 ST180SSeries TJ = 125C 50 R 200 08 0. 0.3 K/ W = 0. 2 W K/ 250 0. 16 A hS Rt 180 120 90 60 30 300 1 0. Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) (Stud Version), 200 A 0 0 40 80 120 160 200 240 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 500 DC 180 120 90 60 30 450 400 350 300 R 0. 1 0. 16 250 RMSLimit 200 Conduction Period 150 100 ST180SSeries TJ = 125C 50 th SA = K/ W 0. 08 K/ W 0.2 K/ W 0.3 K/ W 0.4 K/ W 0.5 K/ W 0.8 K /W K/ W -D el ta R 1.2 K/ W 0 0 40 80 120 160 200 240 280 320 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94397 Revision: 11-Aug-08 ST180SPbF Series 4800 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 200 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 4400 Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4000 3600 3200 2800 2400 ST180SSeries 2000 1 10 100 Vishay High Power Products 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduction May Not Be Maintained. Initial TJ = 125C 4500 No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST180SSeries 2000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25C TJ = 125C 1000 ST180SSeries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 ST180S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94397 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST180SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 200 A Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) VGD IGD 0.1 0.001 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, = 4ms = 2ms = 1ms = 0.66ms (a) (1) Device: ST180S Series 0.01 tp tp tp tp Tj=-40 C 1 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (2) (3) (4) Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 18 0 S 20 P 0 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4"-16UNF2A threads 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 8 - V = Glass-metal seal (only up to 1200 V) 9 - Lead (Pb)-free None = Ceramic housing (over 1200 V) Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95082 For technical questions, contact: ind-modules@vishay.com Document Number: 94397 Revision: 11-Aug-08 Outline Dimensions www.vishay.com Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) 7) MI N. 4 (0.16) MAX. 19 (0.75) MAX. (0. 3 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.0006 s.i.) Red cathode White gate Red shrink 38.5 (1.52) MAX. 16 (0.63) MAX. White shrink 220 (8.66) 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) 10 (0.39) 22 Flexible leads C.S. 25 mm2 (0.039 s.i.) ( 0. 86 )M 9.5 4.3 (0.17) DIA. IN . Glass metal seal Fast-on terminals AMP. 280000-1 REF-250 28.5 (1.12) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. 19 (0.75) MAX. )M IN . 4 (0.16) MAX. 37 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.006 s.i.) Red cathode White gate White shrink 16 (0.63) MAX. 38.5 (1.52) MAX. Red shrink . IN (0. 22 220 (8.66) 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) 10 (0.39) Flexible leads C.S. 25 mm2 (0.039 s.i.) 86 9.5 (0. 4.3 (0.17) DIA. )M Ceramic housing 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. Note (1) For metric device: M16 x 1.5 - length 21 (0.83) maximum Revision: 05-Mar-12 Document Number: 95082 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000