ST180S16P0PBF - Vishay Presicion Group

Document Number: 94397 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 1

Phase Control Thyristors

(Stud Version), 200 A

ST180SPbF Series

Vishay High Power Products

FEATURES

• Center amplifying gate

• International standard case TO-209AB (TO-93)

• Hermetic metal case with ceramic insulator

(Also available with glass-metal seal up to 1200 V)

• Compression bonded encapsulation for heavy duty

operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IT(AV) 200 A

TO-209AB (TO-93)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IT(AV)

200 A

TC85 °C

IT(RMS) 314 A

ITSM

50 Hz 5000

60 Hz 5230

I2t

50 Hz 125

kA2s

60 Hz 114

VDRM/VRRM 400 to 2000 V

tqTypical 100 µs

TJ- 40 to 125 °C

VOLTAGE RATINGS

TYPE

NUMBER

VOLTAGE

CODE

VDRM/VRRM, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

IDRM/IRRM MAXIMUM

AT TJ = TJ MAXIMUM

ST180S

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

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2Revision: 11-Aug-08

ST180SPbF Series

Vishay High Power Products Phase Control Thyristors

(Stud Version), 200 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

at case temperature IT(AV) 180° conduction, half sine wave 200 A

85 °C

Maximum RMS on-state current IT(RMS) DC at 76 °C case temperature 314

Maximum peak, one-cycle

non-repetitive surge current ITSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

5000

t = 8.3 ms 5230

t = 10 ms 100 % VRRM

reapplied

4200

t = 8.3 ms 4400

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

125

kA2s

t = 8.3 ms 114

t = 10 ms 100 % VRRM

reapplied

t = 8.3 ms 81

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2√s

Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.08 V

High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.14

Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.18 mΩ

High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 1.14

Maximum on-state voltage VTM Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse 1.75 V

Maximum holding current IHTJ = TJ maximum, anode supply 12 V resistive load 600 mA

Maximum (typical) latching current IL1000 (300)

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise

of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs

TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Typical delay time td

Gate current 1 A, dIg/dt = 1 A/µs

Vd = 0.67 % VDRM, TJ = 25 °C 1.0

µs

Typical turn-off time tq

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,

VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise

of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = TJ maximum, rated VDRM/VRRM applied 30 mA

Document Number: 94397 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 3

ST180SPbF Series

Phase Control Thyristors

(Stud Version), 200 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

VALUES UNITS

TYP. MAX.

Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10 W

Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A

Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp ≤ 5 ms 20 V

Maximum peak negative gate voltage - VGM 5.0

DC gate current required to trigger IGT

TJ = - 40 °C

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

180 -

mATJ = 25 °C 90 150

TJ = 125 °C 40 -

DC gate voltage required to trigger VGT

TJ = - 40 °C 2.9 -

TJ = 25 °C 1.8 3.0

TJ = 125 °C 1.2 -

DC gate current not to trigger IGD

TJ = TJ maximum

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated VDRM anode to

cathode applied

10 mA

DC gate voltage not to trigger VGD 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction

temperature range TJ- 40 to 125 °C

Maximum storage temperature range TStg - 40 to 150

Maximum thermal resistance,

junction to case RthJC DC operation 0.105

K/W

Maximum thermal resistance,

case to heatsink RthC-hs Mounting surface, smooth, flat and greased 0.04

Mounting torque, ± 10 %

Non-lubricated threads 31

(275) N · m

(lbf ⋅ in)

Lubricated threads 24.5

(210)

Approximate weight 280 g

Case style See dimensions - link at the end of datasheeet TO-209AB (TO-93)

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION TEST CONDITIONS UNITS

180° 0.015 0.012

TJ = TJ maximum K/W

120° 0.019 0.020

90° 0.025 0.027

60° 0.036 0.037

30° 0.060 0.060

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94397

4Revision: 11-Aug-08

ST180SPbF Series

Vishay High Power Products Phase Control Thyristors

(Stud Version), 200 A

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - On-State Power Loss Characteristics

Fig. 4 - On-State Power Loss Characteristics

100

110

120

130

0 40 80 120 160 200 240

Maximum Allowable Case Temperature (°C)

30° 60°

90°

120°

180°

Average On-state Current (A)

Conduction Angle

ST1 8 0 S Se r i e s

R (DC) = 0.105 K/ W

thJC

100

110

120

130

0 50 100 150 200 250 300 350

30° 60°

90°

120° 180°

Avera ge On-st at e Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

ST1 8 0 S Se r i e s

R (DC) = 0.105 K/ W

thJC

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R=0.0

/W-DeltaR

thS

0.1K/ W

0.16K

0.2K

0.3K

0.4K/W

0.5K/W

0.8K

1.2K/W

100

150

200

250

300

350

0 40 80 120 160 200 240

180°

120°

90°

60°

30°

RM S Lim it

Conduction Angle

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

ST1 8 0 S Se r i e s

T = 1 2 5 ° C

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R=0.08K

/W-DeltaR

thS

0.1K/W

0.16K

0.2K/W

0.3K/W

0.4K

0.5K

0.8K/ W

1.2K

100

150

200

250

300

350

400

450

500

0 40 80 120 160 200 240 280 320

180°

120°

90°

60°

30°

RM S Li m it

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

ST180S Se ries

T = 12 5 ° C

Document Number: 94397 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 5

ST180SPbF Series

Phase Control Thyristors

(Stud Version), 200 A Vishay High Power Products

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - On-State Voltage Drop Characteristics

Fig. 8 - Thermal Impedance ZthJC Characteristics

2000

2400

2800

3200

3600

4000

4400

4800

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Pea k Ha lf Sine Wave On-st ate Current (A)

Init ia l T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

ST1 8 0 S Se r i e s

At Any Rated Load Condition And With

Ra ted V Ap plied Follow ing Surge.

RRM

2000

2500

3000

3500

4000

4500

5000

5500

0.01 0.1 1

Pulse Tra in Dura t ion ( s)

Versus Pulse Train Duration. Control

Peak Half Sine Wave On-state Current (A)

Initial T = 125°C

No Volta g e Rea p p lied

Ra t e d V Re a p p l i e d

RRM

ST180S Series

Maximum Non Repetitive Surge Current

Of Conduction May Not Be Maintained.

100

1000

10000

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

T = 2 5 ° C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

ST1 8 0 S Se r i e s

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

ST1 8 0 S Se r i e s

Steady State Value

R = 0.105 K/ W

(DC Operation)

thJC

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6Revision: 11-Aug-08

ST180SPbF Series

Vishay High Power Products Phase Control Thyristors

(Stud Version), 200 A

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

0.1

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj = 2 5 ° C

Tj = 1 2 5 ° C

Tj = - 4 0 ° C

(1) (2) (3)

In st a n t a n e o u s G a t e C u r r e n t ( A )

Instantaneous Gate Voltage (V)

Rectangular gate pulse

a) Recommended load line for

b) Recommended load line for

<=30% ra ted di/ dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

D e v i c e : ST1 8 0 S Se r i e s

(4)

- Thyristor

- Essential part number

- 0 = Converter grade

- Lead (Pb)-free

- S = Compression bonding stud

- V = Glass-metal seal (only up to 1200 V)

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

- P = Stud base 3/4"-16UNF2A threads

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

None = Ceramic housing (over 1200 V)

Note: For metric device M16 x 1.5 contact factory

Device code

51 324

6789

ST 18 0 S 20 P 0 PbF-

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95082

Outline Dimensions

www.vishay.com Vishay Semiconductors

Revision: 05-Mar-12 1Document Number: 95082

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-209AB (TO-93)

DIMENSIONS in millimeters (inches)

Note

(1) For metric device: M16 x 1.5 - length 21 (0.83) maximum

Fast-on terminals

White shrink

Red shrink

Red cathode

Red silicon rubber

210 (8.26) ± 10 (0.39)

C.S. 0.4 mm2

(0.0006 s.i.)

90 (3.54) MIN.

4.3 (0.17) DIA.

19 (0.75) MAX.

38.5 (1.52)

MAX.

16 (0.63) MAX.

8.5 (0.33) DIA.

Glass metal seal

28.5 (1.12) MAX. DIA.

220 (8.66) ± 10 (0.39)

SW 32

C.S. 25 mm2

(0.039 s.i.)

Flexible leads

4 (0.16) MAX.

35 (1.38) MAX.

3/4"-16UNF-2A (1)

27.5 (1.08) MAX.

White gate

White shrink

Red shrink

Red cathode

Red silicon rubber

210 (8.26) ± 10 (0.39)

C.S. 0.4 mm2

(0.006 s.i.)

38.5 (1.52)

MAX.

220 (8.66) ± 10 (0.39)

Ceramic housing

90 (3.54) MIN.

4.3 (0.17) DIA.

19 (0.75) MAX.

8.5 (0.33) DIA.

35 (1.38) MAX.

3/4"-16UNF-2A (1)

27.5 (1.08) MAX. SW 32

27.5 (1.08) MAX. DIA.

White gate

16 (0.63) MAX.

AMP. 280000-1

REF-250

9.5 (0.37) MIN.

22 (0.86) MIN.

C.S. 25 mm2

(0.039 s.i.)

Flexible leads

4 (0.16) MAX.

9.5 (0.37) MIN.

22 (0.86) MIN.

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