1. Product profile
1.1 General description
Dual high-voltage switching diodes, encap sulated in small Surface-Moun ted
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
[1] When switched from IF= 10 mA to IR=10mA; R
L= 100 ; measured at IR=1mA.
BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010 Product data sheet
Table 1. Product overview
Type number Package Configuration
NXP JEDEC
BAV23A SOT23 TO-236AB dual common anode
BAV23C SOT23 TO-236AB dual common cathode
BAV23S SOT23 TO-236AB dual series
BAV23 SOT143B - dual isolated
High switching speed: trr 50 ns Low capacitance: Cd2pF
Low leakage current Small SMD plastic package
Repetitive peak reverse voltage:
VRRM 250 V
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IRreverse current VR= 200 V - - 100 nA
VRreverse voltage - - 200 V
trr reverse recovery time [1] --50ns
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 2 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAV23A
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
BAV23C
1 anode (diode 1)
2 anode (diode 2)
3 common cathod e
BAV23S
1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),
anode (diode 2)
BAV23
1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 2)
4 anode (diode 1)
12
3
006aab099
12
3
12
3
006aab034
12
3
12
3
006aaa763
12
3
21
34
006aab100
12
43
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 3 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Tabl e 4. Ordering information
Type number Package
Name Description Version
BAV23A - plastic surface-mounted package; 3 leads SOT23
BAV23C
BAV23S
BAV23 - plastic surface-mounted package; 4 leads SOT143B
Table 5. Marking codes
Type number Marking code[1]
BAV23A *V0
BAV23C *V9
BAV23S *V5
BAV23 *L3
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage -250V
VRreverse voltage - 200 V
IFforward current [1] -225mA
[2] -125mA
IFRM repetitive peak forward
current -625mA
IFSM non-repetitive peak forward
current square wave [3]
tp=1s-9A
tp= 100 s-3A
tp=10ms - 1.7 A
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 4 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj=25C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from IF= 10 mA to IR=10mA; R
L= 100 ; measured at IR=1mA.
Per device
Ptot total power dissipation Tamb 25 C[4] -250mW
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt - - 360 K/W
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage IF=100mA --1.0V
IF=200mA --1.25V
IRreverse current VR= 200 V - - 100 nA
VR=200V; T
j= 150 C - - 100 A
Cddiode capacitance f = 1 MHz; VR=0V --2pF
trr reverse recovery time [1] --50ns
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 5 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
(1) Tamb = 150 C
(2) Tamb =85C
(3) Tamb =25C
(4) Tamb =40 C
Based on square wave currents.
Tj=25C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Non-repetitive peak forwa rd current as a
function of pul se duration; maximum values
(1) Tamb = 150 C
(2) Tamb =85C
(3) Tamb =25C
(4) Tamb =40 C
Fig 3. Revers e current as a function of reverse voltage; typical values
VF (V)
0 1.61.20.4 0.8
006aab212
200
400
600
IF
(mA)
0
(1) (3)
(4)
(2)
mbg703
10
1
102
IFSM
(A)
10−1
tp (μs)
110
4
103
10 102
006aab213
102
IR
(μA)
VR (V)
0 250200100 15050
10
1
10−1
10−2
10−3
10−4
10−5
(4)
(1)
(2)
(3)
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 6 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
8. Test information
f=1MHz; T
amb =25C FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4. Diod e capacitance as a function of reverse
voltage; typical values Fig 5. Forward current as a function of ambient
temperature; derating curves
mbg447
04862 VR (V)
1.0
0.8
0.2
0.6
0.4
Cd
(pF)
Tamb (°C)
0 20015050 100
006aab214
100
200
300
IF
(mA)
0
(2)
(1)
(1) IR=1mA
Fig 6. Reverse recovery time test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 7 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 7. Package outline SOT23 (TO-236AB) Fig 8. Package outline SOT143B
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
04-11-16Dimensions in mm
3.0
2.8 1.1
0.9
2.5
2.1 1.4
1.2
1.7
1.9
0.48
0.38 0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quan tity
3000 10000
BAV23A SOT23 4 mm pitch, 8 mm tape and reel -215 -235
BAV23C
BAV23S
BAV23 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 8 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
11. Soldering
Fig 9. Reflow soldering footprint SOT23 (TO -2 36 AB)
Fig 10. Wave soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 9 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
Fig 11. Reflow soldering footprint SOT143B
Fig 12. Wave soldering footprint SOT143B
solder lands
solder resist
occupied area
solder paste
sot143b_fr
0.9
0.60.7
3.25
3
0.6
(3×)
0.6
(3×)
0.5
(3×)
0.7
(3×)
1
1.9
2
0.75 0.95
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot143b_fw
4.6
4.45
1.2
(3×)
1.425
(3×)
1.425
1
1.2
2.2
2.575
Dimensions in mm
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 10 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAV23_SER_7 20100319 Product data sheet - BAV23_SER_6
Modifications: •Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted
•Type numbers BAV23A and BAV23C added
•Table 5 “Marking codes”: updated
•Figure 6: adaptation of test condition to specified characteristics in Table 8
•Figure 9, 10, 11 and 12: updated
•Section 13 “Legal information”: updated
BAV23_SER_6 20080303 Product data sheet - BAV23S _5
BAV23_2
BAV23S_5 20011012 Product specification - BAV23 S _4
BAV23_2 19960917 Product specification - BAV23_1
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 11 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specificat ion — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect , incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
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contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconduct ors’ aggregate and cumulati ve liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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authorized or warranted to be suitable for use in medical, milit ary, aircraft,
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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third party
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suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
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Export control — This document as well as the item(s) described herein
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 12 of 13
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 March 2010
Document identifier: BAV23_SER_ 7
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Te st information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13