BLF888EU - AMPLEON - Datasheet.Live

1. Product profile

1.1 General description

A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter

applications which operates at 150 W DVB-T average power. The excellent ruggedness of

this device makes it ideal for digital and analog transmitter applications.

[1] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

Designed for asymmetric Doherty operation

Very high efficiency enabling air cooled high power transmitters

Integrated ESD protection

Excellent ruggedness

High power gain

Excellent reliability

Easy power control

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

Broadcast transmitter applications in the UHF band

Digital broadcasting

BLF888E; BLF888ES

UHF power LDMOS transistor

Rev. 2 — 30 August 2016 Product data sheet

Table 1. Application information

RF performance at VDS = 50 V in an asymmetrical Doherty application.

Test signal f PL(AV) GpDIMDshldr PAR

(MHz) (W) (dB) (%) (dBc) (dB)

DVB-T (8k OFDM) 470 to 608 150 17 52 38 8 [1]

600 to 700 150 17 50 38 8 [1]

650 to 790 150 15 49 38 8 [1]

Product data sheet Rev. 2 — 30 August 2016 2 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLF888E (SOT539A)

1 drain1 (peak)

2 drain2 (main)

3 gate1 (peak)

4 gate2 (main)

5source [1]

BLF888ES (SOT539B)

1 drain1 (peak)

2 drain2 (main)

3 gate1 (peak)

4 gate2 (main)

5source [1]

sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLF888E - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A

BLF888ES - earless flanged balanced ceramic package; 4 leads SOT539B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS(amp)main main amplifier drain-source voltage - 104 V

VDS(amp)peak peak amplifier drain-source voltage - 120 V

VGS(amp)main main amplifier gate-source voltage 0.5 +11 V

VGS(amp)peak peak amplifier gate-source voltage 6+11V

Tstg storage temperature 65 +150 C

Tjjunction temperature [1] -225C

Product data sheet Rev. 2 — 30 August 2016 3 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

5. Thermal characteristics

[1] Measured under DC test conditions, with peak section off.

[2] Measured in an ultra-wide Doherty application, using DVB-T (8k OFDM) signal, PAR (of output signal) at

0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

6. Characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to

case

Tcase =90C; VDS =50V;

IDS = 3 A (main); IDS = 0 A (peak)

[1] 0.29 K/W

Tcase =90C; VDS =50V;

PL= 150 W; PAR = 8 dB

[2] 0.19 K/W

Table 6. DC characteristics

Tj=25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Main device

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 2.4 mA 104 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 240 mA 1.25 1.75 2.25 V

IDSS drain leakage current VGS =0V; V

DS =50V - - 2.8 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V

-38- A

IGSS gate leakage current VGS =10V; V

DS = 0 V - - 280 nA

RDS(on) drain-source on-state resistance VGS =V

GS(th) +3.75 V;

ID=8.5A

-120- m

Peak device

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 3.6 mA 125 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 360 mA 1.33 1.83 2.33 V

IDSS drain leakage current VGS =0V; V

DS =50V - - 2.8 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V

-57- A

IGSS gate leakage current VGS =10V; V

DS = 0 V - - 280 nA

RDS(on) drain-source on-state resistance VGS =V

GS(th) +3.75 V;

ID= 12.6 A

-90- m

Table 7. AC characteristics

Tj=25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Main device

Ciss input capacitance VGS = 0 V; VDS =50V; f=1MHz - 210 - pF

Coss output capacitance VGS = 0 V; VDS =50V; f=1MHz - 67 - pF

Crss reverse transfer capacitance VGS = 0 V; VDS =50V; f=1MHz - 1.35 - pF

Product data sheet Rev. 2 — 30 August 2016 4 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

7. Test information

7.1 Ruggedness in Doherty operation

The BLF888E and BLF888ES are capable of withstanding a load mismatch corresponding

to VSWR 40 : 1 through all phases under the following conditions: VDS =50 V;

f = 550 MHz at rated load power.

Peak device

Ciss input capacitance VGS = 0 V; VDS =50V; f=1MHz - 315 - pF

Coss output capacitance VGS = 0 V; VDS =50V; f=1MHz - 105 - pF

Crss reverse transfer capacitance VGS = 0 V; VDS =50V; f=1MHz - 1.5 - pF

Table 8. RF characteristics

RF characteristics in Ampleon production test circuit, Tcase =25



C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

DVB-T (8k OFDM), Doherty operation

VDS drain-source voltage - 50 - V

IDq quiescent drain current peak section: VGS =1.3V

below VGS(th) (peak)

-600-mA

PL(AV) average output power f = 550 MHz - 150 - W

Gppower gain f = 550 MHz 15.8 17 - dB

Ddrain efficiency f = 550 MHz 48 52 - %

PAR peak-to-average ratio f = 550 MHz 7.2 7.8 - dB

Table 7. AC characteristics …continued

Tj=25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 2 — 30 August 2016 5 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

7.2 Test circuit

Printed-Circuit Board (PCB): Rogers 3006; r= 6.5 F/m; height = 0.635 mm; Cu (top/bottom metalization); thickness copper

plating = 29.6 m; Rogers 3010: r= 10 F/m; height = 0.254 mm

See Table 9 for a list of components.

Fig 1. Component layout for production RF test circuit

C24

C25

R12

C20

C21

C26

C22

C23

R10

R11

L3 L5

C12

C10

C13

C11

R1 R2

C14

80 mm

95 mm 95 mm

amp00021

Table 9. List of components

For test circuit see Figure 1.

Component Description Value Remarks

C1, C2 multilayer ceramic chip capacitor 51 pF [1] ATC 100B

C3 multilayer ceramic chip capacitor 11 pF [1] ATC 100B

C4 multilayer ceramic chip capacitor 13 pF [1] ATC 100B

C5, C6 multilayer ceramic chip capacitor 24 pF [1] ATC 100B

C7 multilayer ceramic chip capacitor 33 pF [1] ATC 100B

C8 multilayer ceramic chip capacitor 51 pF [2] ATC 100A

C9 multilayer ceramic chip capacitor 12 pF [1] ATC 100B

C10 multilayer ceramic chip capacitor 20 pF [1] ATC 100B

C11, C12 multilayer ceramic chip capacitor 43 pF [1] ATC 100B

C13, C14 multilayer ceramic chip capacitor 4.7 F

C20, C21 electrolytic capacitor 100 pF [1] ATC 100B

C22, C23 multilayer ceramic chip capacitor 4.7 F, 100 V

C25, C25 electrolytic capacitor 470 F, 6 3 V

C26 multilayer ceramic chip capacitor 47 pF [1] ATC 100B

L1, L2 inductor 10 nH Coilcraft

L3, L4 inductor 0.5 turn, D = 2 mm,

d=1mm

L5, L6 inductor 1 turn, D = 5 mm,

d=1mm

R1 chip resistor 90 

Product data sheet Rev. 2 — 30 August 2016 6 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

[1] American Technical Ceramics type 100B or capacitor of same quality

[2] American Technical Ceramics type 100A or capacitor of same quality

7.3 Graphical data

7.3.1 DVB-T in production test circuit

R2 chip resistor 265 

R3, R4 chip resistor 360 

R5 chip resistor 15 

R6 chip resistor 75 

R7 chip resistor 5 

R10, R11 wire resistor 1 

R12 shunt resistor 0.01 

Table 9. List of components …continued

For test circuit see Figure 1.

Component Description Value Remarks

VDS = 50 V; IDq = 600 mA; measured in a Doherty

production test circuit at 550 MHz.

VDS = 50 V; IDq = 600 mA; measured in a Doherty

production test circuit at 550 MHz.

Fig 2. Peak-to-average power ratio as a function of

output power; typical values

Fig 3. Drain efficiency as a function of output power;

typical values

amp00079

0 25 50 75 100 125 150 175 200

PL (W)

PAR

PARPAR

(dB)

(dB)(dB)

amp00080

0 25 50 75 100 125 150 175 200

PL (W)

ηD

(%)(%)(%)

Product data sheet Rev. 2 — 30 August 2016 7 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

VDS = 50 V; IDq = 600 mA; measured in a Doherty production test circuit at 550 MHz.

Fig 4. Power gain as a function of output power; typical values

amp00081

0 25 50 75 100 125 150 175 200

16.5

17.5

PL (W)

(dB)(dB)(dB)

Product data sheet Rev. 2 — 30 August 2016 8 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

8. Package outline

Fig 5. Package outline SOT539A

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT539A 12-05-02

10-02-02

0 5 10 mm

scale

w1AB

M M M

M M

w2C

UNIT A

11.81

11.56

0.18

0.10

31.55

30.94 13.72 9.53

9.27

17.12

16.10

10.29

10.03

4.7

4.2

ce U2

0.25

0.25 0.51

35.56

1.75

1.50

41.28

41.02

25.53

25.27

3.30

3.05

2.26

2.01

9.50

9.30

inches 0.465

0.455

0.007

0.004

1.242

1.218

31.52

30.96

1.241

1.219 0.540 0.375

0.365

0.674

0.634

0.405

0.395

0.185

0.165

0.010

0.010 0.0201.400

0.069

0.059

1.625

1.615

1.005

0.995

0.130

0.120

0.089

0.079

0.374

0.366

3.48

2.97

0.137

0.117

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

Product data sheet Rev. 2 — 30 August 2016 9 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

Fig 6. Package outline SOT539B

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT539B

sot539b_po

12-05-02

13-05-24

Unit(1)

max

nom

min

4.7

4.2

11.81

11.56

31.55

30.94

31.52

30.96

9.5

9.3

9.53

9.27

1.75

1.50

17.12

16.10

3.48

2.97

10.29

10.03

0.25

Dimensions

Earless flanged balanced ceramic package; 4 leads SOT539B

0.18

0.10

1EE

13.72

FHH

25.53

25.27

2.26

2.01

32.39

32.13

U2w2

0.25

inches

max

nom

min

0.185

0.165

0.465

0.455

1.242

1.218

1.241

1.219

0.374

0.366

0.375

0.365

0.069

0.059

0.674

0.634

0.137

0.117

0.405

0.395

0.01

0.007

0.004

0.54

1.005

0.995

0.089

0.079

1.275

1.265

0.01

0 5 10 mm

scale

Dw2

1 2

3 4

Note

1. millimeter dimensions are derived from the original inch dimensions.

Product data sheet Rev. 2 — 30 August 2016 10 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

CCDF Complementary Cumulative Distribution Function

DVB-T Digital Video Broadcast - Terrestrial

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal-Oxide Semiconductor

MTF Median Time to Failure

OFDM Orthogonal Frequency Division Multiplexing

PAR Peak-to-Average Ratio

UHF Ultra High Frequency

VSWR Voltage Standing Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF888E_BLF888ES v.2 20160830 Product data sheet - BLF888E_BLF888ES v.1

Modifications: •Section 1.1 on page 1: section updated

•Table 1 on page 1: table updated

•Section 1.2 on page 1: text second list item updated

•Table 5 on page 3: table updated

•Table 6 on page 3: table updated

•Table 8 on page 4: table updated

•Section 7.1 on page 4: section updated

•Section 7.3 on page 6: section added

BLF888E_BLF888ES v.1 20160317 Objective data sheet - -

Product data sheet Rev. 2 — 30 August 2016 11 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’s aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

Ampleon product can reasonably be expected to result in personal injury,

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

terms and conditions of the respective agreement shall apply. Ampleon

hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 30 August 2016 12 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’ warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

uses the product for automotive applications beyond Ampleon’ specifications

such use shall be solely at customer’s own risk, and (c) customer fully

indemnifies Ampleon for any liability, damages or failed product claims

resulting from customer design and use of the product for automotive

applications beyond Ampleon’ standard warranty and Ampleon’ product

specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Licenses

12.5 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

13. Contact information

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

ICs with DVB-T or DVB-T2 functionality

Use of this product in any manner that complies with the DVB-T or the

DVB-T2 standard may require licenses under applicable patents of the

DVB-T respectively the DVB-T2 patent portfolio, which license is available

from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under

applicable patents of other parties.

BLF888E; BLF888ES
UHF power LDMOS transistor
© Ampleon Netherlands B.V. 2016. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 30 August 2016
Document identifier: BLF888E_BLF888ES
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’. 
Contents
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1  General description  . . . . . . . . . . . . . . . . . . . . .  1
2  Features and benefits. . . . . . . . . . . . . . . . . . . .  1
3  Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
Pinning information. . . . . . . . . . . . . . . . . . . . . .  2
Ordering information. . . . . . . . . . . . . . . . . . . . .  2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2
Thermal characteristics  . . . . . . . . . . . . . . . . . .  3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  3
Test information. . . . . . . . . . . . . . . . . . . . . . . . .  4
1  Ruggedness in Doherty operation  . . . . . . . . . .  4
2  Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  5
3  Graphical data  . . . . . . . . . . . . . . . . . . . . . . . . .  6
3.1  DVB-T in production test circuit  . . . . . . . . . . . .  6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  8
Handling information. . . . . . . . . . . . . . . . . . . .  10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . .  10
Revision history. . . . . . . . . . . . . . . . . . . . . . . .  10
Legal information. . . . . . . . . . . . . . . . . . . . . . .  11
1  Data sheet status . . . . . . . . . . . . . . . . . . . . . .   11
2  Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . .   11
3  Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .   11
4  Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
5  Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .  12
Contact information. . . . . . . . . . . . . . . . . . . . .  12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13