© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 600 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ600 V
V
GS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 1.4 A
IDM TC= 25°C, pulse width limited by TJM 2.1 A
IAR TC= 25°C 1.4 A
EAR TC= 25°C5mJ
EAS TC= 25°C75mJ
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 20 Ω
PDTC= 25°C50W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
Weight TO-220 4.0 g
TO-252 0.35 g
TO-251 0.4 g G = Gate D = Drain
S = Source TAB = Drain
DS99253E(10/05)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 25 µA 600 V
VGS(th) VDS = VGS, ID = 25 µA 3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±50 nA
IDSS VDS = VDSS 1µA
VGS = 0 V TJ = 125°C20µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 9.0 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
IXTP 1R4N60P
IXTU 1R4N60P
IXTY 1R4N60P
VDSS = 600 V
ID25 = 1.4 A
RDS(on) ≤≤
≤≤
≤ 9.0 ΩΩ
ΩΩ
Ω
TO-252 (IXTY)
G
S
(TAB)
TO-220 (IXTP)
D(TAB)
G
S
TO-251 (IXTU)
(TAB)
D
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, pulse test 0.7 1.1 S
Ciss 140 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 17 pF
Crss 2.4 pF
td(on) 10 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 16 ns
td(off) RG = 50 Ω (External) 25 ns
tf16 ns
Qg(on) 5.2 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 1.34 nC
Qgd 5.2 nC
RthJC 2.5 °C/W
RthCS (TO-220) 0.25 °C/W
RthCS (TO-251) 1.0 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 1.4 A
ISM Repetitive 4 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 1.5 A, -di/dt =100 A/µs 500 ns
VR=100 V, VGS= 0 V
TO-252 AA (IXTY) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
Pins: 1 - Gate 2,4 - Drain
3 - Source
TO-220 (IXTP) Outline
TO-251 (IXTU) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 BSC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
1. Gate
2. Drain
3. Source
4. Drain
© 2006 IXYS All rights reserved
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Fig. 2. Extended Output Characteristics
@ 25ºC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
7V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 5 10 15 20 25 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25ºC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0246810121416
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Tem perature
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
I
D
= 1.4A
I
D
= 0.7A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I
D
- Amperes
R
D S ( o n )
- Normalized
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Fig. 11. Capacitance
1
10
100
1000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
012345
Q
G
- NanoCoulombs
V
G S
- Volts
V
DS
= 300V
I
D
= 0.7A
I
G
= 10mA
Fig. 7. Input Admittance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
44.555.5 66.5 7
V
G S
- Volts
I
D
- Amperes
T
J
=125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
I
D
- Amperes
g f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.4 0.5 0.6 0.7 0.8 0.9 1
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Maxim um Transient Therm al
Resistance
0.1
1.0
10.0
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
R
( t h ) J C
-
º
C /
W
