1HN04CH Ordering number : ENA0925 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 1HN04CH General-Purpose Switching Device Applications Features * 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 100 20 V V ID 120 mA mA Drain Current (Pulse) IDP PW10s, duty cycle1% 480 Allowable Power Dissipation PD Mounted on a ceramic board (900mm20.8mm) 0.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 100 V VDS=100V, VGS=0V 1 A 10 A IGSS VGS(off) VGS=16V, VDS=0V VDS=10V, ID=100A 1.2 yfs RDS(on)1 VDS=10V, ID=60mA 100 6.1 8.0 RDS(on)2 Ciss ID=30mA, VGS=4V 7 9.8 VDS=20V, f=1MHz 19 pF Output Capacitance Coss VDS=20V, f=1MHz 2.6 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 1.3 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Marking : LB ID=60mA, VGS=10V 2.6 175 V mS Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 90507PE TI IM TC-00000810 No. A0925-1/4 1HN04CH Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ Unit max td(on) tr See specified Test Circuit. 13 See specified Test Circuit. 7.8 ns td(off) tf See specified Test Circuit. 87 ns Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD ns See specified Test Circuit. 60 ns VDS=50V, VGS=10V, ID=120mA VDS=50V, VGS=10V, ID=120mA 1.6 nC 0.25 nC VDS=50V, VGS=10V, ID=120mA IS=120mA, VGS=0V Package Dimensions 0.25 nC 0.83 1.2 V Switching Time Test Circuit unit : mm (typ) 7015A-004 VDD=50V VIN 10V 0V 0.6 2.9 0.15 1.6 2.8 0.2 D PW=10s D.C.1% 0.05 Rg G 1 0.6 ID=60mA RL=833 VOUT VIN 3 2 0.95 1 : Gate 2 : Source 3 : Drain 1HN04CH P.G 50 S 0.9 0.2 0.4 SANYO : CPH3 Rg=1.2k ID -- VDS 0V 5. 40 100 50 20 VGS=2.5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 12 10 8 60mA 6 4 2 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT12901 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT12900 RDS(on) -- Ta 16 Static Drain-to-Source On-State Resistance, RDS(on) -- 14 1.0 Gate-to-Source Voltage, VGS -- V Ta=25C ID=30mA 0.5 IT12899 RDS(on) -- VGS 16 Static Drain-to-Source On-State Resistance, RDS(on) -- 150 --25C 8. 3.0V 60 Ta=75 C 0V Drain Current, ID -- mA 200 25C 10 .0V 80 VDS=10V 4 15 Drain Current, ID -- mA 100 ID -- VGS 250 .0V .0V 120 14 12 10 A 0m =3 I A V, D =4 60m S = G V , ID 0V =1 S VG 8 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT12902 No. A0925-2/4 2 100 7 5 5C --2 = C Ta 75 2 25 C 10 7 5 3 2 1.0 0.1 3 5 7 1.0 2 3 5 7 10 2 3 1.0 7 5 3 2 0 0.4 0.6 tf 3 2 td(off) 100 7 5 3 2 td(on) tr 10 7 5 3 1.0 f=1MHz Ciss 10 7 5 3 2 Coss 1.0 Crss 5 3 2 3 5 7 2 10 3 5 7 0 100 IT12905 10 20 30 40 50 60 VGS -- Qg 1.0 7 5 Drain Current, ID -- A 8 6 5 4 3 2 IDP=480mA 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 IT12907 PD -- Ta 0.7 D C 90 100 IT12906 2 Operation in this area is limited by RDS(on). 0.01 7 5 PW10s 1m s 1 10 0m 100s s 0m s op er at io n 3 2 0 ID=120mA 0.1 7 5 3 1 80 ASO 3 7 70 Drain-to-Source Voltage, VDS -- V VDS=50V ID=120mA 9 1.2 IT12904 7 Drain Current, ID -- mA 10 1.0 3 2 1000 7 5 0.8 Ciss, Coss, Crss -- VDS 5 VDD=50V VGS=10V 3 2 0.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 10 7 5 3 2 5 7 100 IT12903 SW Time -- ID 7 5 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 0.1 2 Drain Current, ID -- mA Allowable Power Dissipation, PD -- W VGS=0V Ta= 75C 3 3 IS -- VSD 1000 7 5 3 2 VDS=10V 25C --25 C yfs -- ID 1000 7 5 Source Current, IS -- mA Forward Transfer Admittance, yfs -- mS 1HN04CH (T a= 25 C ) Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V 2 3 IT12908 0.6 M ou nt 0.5 ed on ac er 0.4 am ic bo ar 0.3 d (9 00 m 0.2 m2 0. 0 8m m ) 0.1 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT12909 No. A0925-3/4 1HN04CH Note on usage : Since the 1HN04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice. PS No. A0925-4/4