1HN04CH
No. A0925-1/4
Features
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID120 mA
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 480 mA
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 0.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 100 V
Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 1.2 2.6 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=60mA 100 175 mS
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=60mA, VGS=10V 6.1 8.0 Ω
RDS(on)2 ID=30mA, VGS=4V 7 9.8 Ω
Input Capacitance Ciss VDS=20V, f=1MHz 19 pF
Output Capacitance Coss VDS=20V, f=1MHz 2.6 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 1.3 pF
Marking : LB Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0925
90507PE TI IM TC-00000810
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
1HN04CH N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
1HN04CH
No. A0925-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise T ime trSee specified Test Circuit. 7.8 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 87 ns
Fall T ime tfSee specified Test Circuit. 60 ns
Total Gate Charge Qg VDS=50V, VGS=10V, ID=120mA 1.6 nC
Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=120mA 0.25 nC
Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=120mA 0.25 nC
Diode Forward Voltage VSD IS=120mA, VGS=0V 0.83 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7015A-004
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
21
3
0.95
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=60mA
RL=833Ω
Rg
VDD=50V
VOUT
1HN04CH
VIN
10V
0V
VIN
Rg=1.2kΩ
ID -- VDS ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °C
Drain Current, ID -- mA
250
50
150
100
200
0
0
40
20
80
60
100
120
0
1.00.80.60.1 0.2 0.4 0.90.70.3 0.5
IT12899
0 1.00.5 2.0 3.01.5 2.5 3.5 4.0 4.5 5.0
IT12900
IT12902
02468 1610 12 14
IT12901
16
0
4
2
8
12
6
10
14
Ta=
75
°
C
--2
5°C
Ta=25°C
VGS=2.5V
VDS=10V
--60
0
10
12
14
4
8
6
2
16
--40 --20 0 20 40 60 80 100 120 140 160
VGS=4V, ID=
3
0mA
VGS=10V, ID=60mA
10.0V
60mA
ID=30mA
4.0V
5
.0V
8.0V
15.0V
3.0V
25°C
1HN04CH
No. A0925-3/4
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
VGS -- Qg
SW Time -- IDCiss, Coss, Crss -- VDS
⏐
y
fs⏐ -- IDIS -- VSD
Drain Current, ID -- mA
Switching Time, SW Time -- ns
Drain Current, ID -- mA
Forward T ransfer Admittance, ⏐
y
fs⏐ -- mS
Diode Forward Voltage, VSD -- V
Source Current, IS -- mA
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
0 0.2 0.6 1.00.4 0.8 1.61.41.2
0
1
2
6
4
3
7
8
9
5
10
IT12907
3
7
10
5
5
3
2
7
7
1000
5
5
3
2
7
100
3
2
IT12905
IT12903
1.0 10
23 5 27100
357 0 1020304050 8060 70 90 100
1.0
5
3
3
3
7
2
2
10
5
7
5
IT12906
IT12904
0 0.40.2 0.6 0.8 1.0 1.2
0.1
1.0
7
5
3
2
2
10
7
5
3
2
100
7
5
3
2
1000
7
5
3
VGS=0V
--25
°
C
25°C
Ta=
75°C
td(on)
td(off)
tf
tr
VDD=50V
VGS=10V
Ciss
Coss
Crss
0.1
1.0 1.0
23 57 2 10
357 2 100
357
10
7
5
3
2
2
1000
7
5
3
2
100
7
5
3
VDS=10V
Ta= --25°
C
IT12908
IT12909
25°
C
f=1MHz
0 20 40 60 80 100 120 140 160
0
0.4
0.3
0.2
0.1
0.7
0.5
0.6
2
3
5
7
2
3
5
7
3
2
0.1
5
7
1.0
0.01
0.001 2 3 57 2 3 57 2 3 57 2 3
0.1 1.0 10 100
Operation in this area
is limited by RDS(on).
IDP=480mA
ID=120mA
100ms
10ms
1ms
PW≤10µs
DC operation (Ta=25°C)
100µs
VDS=50V
ID=120mA
75°
C
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
Mounted on a ceramic board (900mm
2
✕0.8mm)
1HN04CH
No. A0925-4/4
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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intellctual property rights which has resulted from the use of the technical information and products mentioned
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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PS
Note on usage : Since the 1HN04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of September, 2007. Specifications and information herein are subject
to change without notice.
