BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
1 Version: I1804
200mW, 5% Tolerance SMD Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 75V
VZ tolerance selection of ± 5%
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Low voltage stabilizers or voltage references
Adapters
On-board DC/DC converter
MECHANICAL DATA
Case: SOD-323F
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 4.02 ± 0.5mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ 2.4-75 V
PD 200 mW
VF at IF=10mA 1 V
TJ Max. 150 °C
Package SOD-323F
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ IF=10mA VF 1 V
Power dissipation PD 200 mW
Junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +150 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 625 °C/W
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
2 Version: I1804
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE TEST
CURRENT
REGULAR IMPEDANCE
TEST
CURRENT
LEAKAGE
CURRENT
VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
V mA mA µA V
Min. Nom. Max. Max. Max. Max.
BZT52C2V4S Z0 2.28 2.40 2.52 5 100 564 1 45 1
BZT52C2V7S Z1 2.57 2.70 2.84 5 100 564 1 18 1
BZT52C3V0S Z2 2.85 3.00 3.15 5 100 564 1 9 1
BZT52C3V3S Z3 3.14 3.30 3.47 5 95 564 1 4.5 1
BZT52C3V6S Z4 3.42 3.60 3.78 5 90 564 1 4.5 1
BZT52C3V9S Z5 3.71 3.90 4.10 5 90 564 1 2.7 1
BZT52C4V3S Z6 4.09 4.30 4.52 5 90 564 1 2.7 1
BZT52C4V7S Z7 4.47 4.70 4.94 5 80 470 1 2.7 2.0
BZT52C5V1S Z8 4.85 5.10 5.36 5 60 451 1 1.8 2.0
BZT52C5V6S Z9 5.32 5.60 5.88 5 40 376 1 0.9 2.0
BZT52C6V2S ZA 5.89 6.20 6.51 5 10 141 1 2.7 4.0
BZT52C6V8S ZB 6.46 6.80 7.14 5 15 75 1 1.8 4.0
BZT52C7V5S ZC 7.11 7.50 7.86 5 15 75 1 0.9 5.0
BZT52C8V2S ZD 7.79 8.20 8.61 5 15 75 1 0.63 5.0
BZT52C9V1S ZE 8.65 9.10 9.56 5 15 94 1 0.45 6.0
BZT52C10S ZF 9.50 10 10.50 5 20 141 1 0.18 7.0
BZT52C11S ZG 10.45 11 11.55 5 20 141 1 0.09 8.0
BZT52C12S ZH 11.40 12 12.60 5 25 141 1 0.09 8.0
BZT52C13S ZJ 12.35 13 13.65 5 30 160 1 0.09 8.0
BZT52C15S ZK 14.25 15 15.75 5 30 188 1 0.045 10.5
BZT52C16S ZL 15.20 16 16.80 5 40 188 1 0.045 11.2
BZT52C18S ZM 17.10 18 18.90 5 45 212 1 0.045 12.6
BZT52C20S ZN 19.00 20 21.00 5 55 212 1 0.045 14.0
BZT52C22S ZP 20.90 22 23.10 5 55 235 1 0.045 15.4
BZT52C24S ZR 22.80 24 25.20 5 70 235 1 0.045 16.8
BZT52C27S ZS 25.65 27 28.35 2 80 282 0.5 0.045 18.9
BZT52C30S ZT 28.50 30 31.50 2 80 282 0.5 0.045 21.0
BZT52C33S ZU 31.35 33 34.65 2 80 306 0.5 0.045 23.0
BZT52C36S ZV 34.20 36 37.80 2 90 329 0.5 0.045 25.2
BZT52C39S ZW 37.05 39 40.95 2 130 329 0.5 0.045 27.3
BZT52C43S ZX 40.85 43 45.15 2 150 353 0.5 0.045 30.1
BZT52C47S ZY 44.65 47 49.35 2 170 353 0.5 0.045 33.0
BZT52C51S Z 48.45 51 53.55 2 180 376 0.5 0.045 35.7
BZT52C56S Z 53.20 56 58.80 2 200 400 0.5 0.045 39.2
BZT52C62S Z 58.90 62 65.10 2 215 423 0.5 0.045 43.4
BZT52C68S Z 64.60 68 71.40 2 240 447 0.5 0.045 47.6
BZT52C75S Z 71.25 75 78.75 2 255 470 0.5 0.045 52.5
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
3 Version: I1804
Notes:
1. The zener voltage (VZ) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK.
ORDERING INFORMATION
PART NO.
(Note 1)
PACKAGE PACKING
BZT52CxxxS RRG SOD-323F 3K / 7" Reel
BZT52CxxxS RR SOD-323F 3K / 7" Reel
BZT52CxxxS R9G SOD-323F 10K / 13" Reel
BZT52CxxxS R9 SOD-323F 10K / 13" Reel
Note:
1. "xxx" defines voltage from 2.4V (BZT52C2V4S) to 75V (BZT52C75S)
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
4 Version: I1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
Fig. 2 Zener Breakdown Characteristics
Fig. 3 Zener Breakdown Characteristics
Fig.4 Power Dissipation Curve
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
A
=25oC
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8 9 10 11 12
TA=25oC
0.01
0.1
1
10
100
15 25 35 45 55 65 75 85
0
100
200
300
0 50 100 150 200
Zener Current (mA)
Forward Voltage (V)
Zener Current (mA)
Zener Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Zener Voltage (V)
Forward Current (mA)
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
5 Version: I1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Capacitance
Fig.6 Effect of Zener Voltage on Impedence
1
10
100
1000
1 10 100
1V Bias
Bias at 50% of
VZ (Nom)
1
10
100
1000
1 10 100
IZ=5mA
IZ=20mA
IZ=1mA
Dynamic Impedence(Ohm)
Zener Voltage (V)
Zener Voltage (V)
Capacitance (pF)
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
6 Version: I1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-323F
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 1.15 1.35 0.045 0.053
B 2.30 2.80 0.091 0.110
C 0.25 0.40 0.010 0.016
D 1.60 1.80 0.063 0.071
E 0.80 1.10 0.031 0.043
F 0.05 0.25 0.002 0.010
DIM. Unit (mm) Unit (inch)
Typ. Typ.
A 0.63 0.025
B 0.83 0.033
C 1.60 0.063
D 2.86 0.113
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
7 Version: I1804
Notice
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