2SK4123LS Ordering number : ENA0826 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4123LS General-Purpose Switching Device Applications Features * * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V IDc*1 IDpack*2 Drain Current (DC) Drain Current (Pulse) IDP Limited only by maximum temperature SANYO's ideal heat dissipation condition PW10s, duty cycle1% 18 A 12.4 A 66 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *3 EAS 412 mJ Avalanche Current *4 IAV 18 A Tc=25C (SANYO's ideal heat dissipation condition) *1 Shows chip capability *2 Package limited *3 VDD=99V, L=2mH, IAV=18A *4 L2mH, single pulse Marking : K4123 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70407QB TI IM TC-00000776 No. A0826-1/4 2SK4123LS Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=360V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=30V, VDS=0V VDS=10V, ID=1mA yfs RDS(on) VDS=10V, ID=9A Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions min typ Unit max 450 V 100 A 100 nA 5 V 0.34 3 4.5 9 S Input Capacitance Ciss ID=9A, VGS=10V VDS=30V, f=1MHz Output Capacitance Coss VDS=30V, f=1MHz Reverse Transfer Capacitance Crss pF td(on) VDS=30V, f=1MHz See specified Test Circuit. 60 Turn-ON Delay Time 28 ns Rise Time tr td(off) See specified Test Circuit. 97 ns See specified Test Circuit. 140 ns tf See specified Test Circuit. 56 ns Turn-OFF Delay Time Fall Time 0.26 1200 pF 280 pF Total Gate Charge Qg nC Qgs VDS=200V, VGS=10V, ID=18A VDS=200V, VGS=10V, ID=18A 47.2 Gate-to-Source Charge 7.8 nC Gate-to-Drain "Miller" Charge Qgd VDS=200V, VGS=10V, ID=18A 28.4 Diode Forward Voltage VSD IS=18A, VGS=0V nC 0.9 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=200V L 10V 0V 50 RG ID=9A RL=22.2 VIN D VOUT PW=10s D.C.0.5% 2SK4123LS 10V 0V 50 VDD G 2SK4123LS P.G RGS=50 S No. A0826-2/4 2SK4123LS ID -- VDS 50 55 Tc=25C 15V 45 50 10V Tc= --25C 25C 45 Drain Current, ID -- A 40 Drain Current, ID -- A ID -- VGS VDS=20V 35 30 8V 25 20 15 10 75C 35 30 25 20 15 10 VGS=5V 5 40 6V 5 0 0 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 0 4 6 8 10 12 14 15 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 1.4 2 IT12587 IT12588 RDS(on) -- Tc 0.8 1.2 1.0 1.8 0.6 Tc= --25C 0.4 25C 75C 0.2 7.5 8.0 8.5 9.0 9.5 Gate-to-Source Voltage, VGS -- V 5 = Tc 3 5C --2 75 C 2 1.0 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 td(off) 100 tf 5 td(on) 3 75 100 125 150 IT12590 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.6 0.8 1.0 1.2 1.4 IT12592 Ciss, Coss, Crss -- VDS f=1MHz 5 3 Ciss, Coss, Crss -- pF 3 50 10 7 5 7 5 7 25 Diode Forward Voltage, VSD -- V 7 tr 0 VGS=0V IT12591 VDD=200V VGS=10V 2 --25 IS -- VSD 0.01 0.2 4 5 SW Time -- ID 2 0.1 3 2 7 3 0.1 A Case Temperature, Tc -- C Source Current, IS -- A Forward Transfer Admittance, yfs -- S C 25 =1 S =9 , ID 0V 0.2 5 2 7 VG 0.3 IT12589 VDS=10V 10 0.4 0 --50 10 yfs -- ID 3 0.5 --25C 7.0 0.6 25C 6.5 0.7 Tc=7 5C 0 6.0 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- ID=9A 2 Ciss 1000 7 5 Coss 3 2 100 Crss 7 2 5 10 0.1 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT12593 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12594 No. A0826-3/4 2SK4123LS VGS -- Qg 10 VDS=200V ID=18A 8 7 6 5 4 3 1 0 10 20 30 40 Total Gate Charge, Qg -- nC 50 IDpack(*2)=12.4A DC 1.0 7 5 3 2 1.5 1.0 0.5 1m 10 ms 0m s era tio n s s s op Operation in this area is limited by RDS(on). *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 2 3 5 7 IT12596 PD -- Tc 45 2.0 10 0 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 7 5 3 2 IT12595 PD -- Ta 2.5 10 10 IDc(*1)=18A 0.1 7 5 3 Tc=25C 2 Single pulse 0.01 0.1 2 3 5 7 1.0 2 0 PW10s IDP=66A 100 7 5 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 2 40 35 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT12574 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT12597 Note on usage : Since the 2SK4123LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. PS No. A0826-4/4