PTB20157A NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20157A is designed for Class C, Common Base both CW and PEP Applications from 1.35 to 1.85 GHz. FEATURES INCLUDE: POUT 20 W Gain 6.0 dB min. Silicon Nitride Passivated OmnigoldTM Metalization System MAXIMUM RATINGS IC 6.0 A VCBO 50 V VEBO 4.0 V PDISS 75 W @ TC = 25 C TSTG -40 C to +150 C JC 2.33 C/W 1 = Collector 2 = Base 3 = Emitter NONE CHARACTERISTICS TC = 25 C SYMBOL TEST CONDITIONS BVCES IC = 50 mA BVCER IC = 50 mA BVEBO IE = 5.0 mA hFE VCE = 5.0 V RBE = 27 IC = 500 mA VCC = 22 V Pout = 20 W 50 V 50 V 4.0 V 20 Gpe c MINIMUM TYPICAL MAXIMUM UNITS f = 1.35 - 1.85 GHz 120 --- 6.0 7.0 dB 40 43 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. 10:1 --- REV. A 1/1