A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 50 mA 50 V
BVCER IC = 50 mA RBE = 27 Ω 50 V
BVEBO IE = 5.0 mA 4.0 V
hFE VCE = 5.0 V IC = 500 mA 20 120 ---
Gpe
c
VCC = 22 V Pout = 20 W f = 1.35 – 1.85 GHz
6.0
40
7.0
43
10:1
dB
%
---
NPN SILICON RF POWER TRANSISTOR
PTB20157A
DESCRIPTION:
The ASI PTB20157A is designed for
Class C, Common Base both CW and
PEP Applications from 1.35 to 1.85
GHz.
FEATURES INCLUDE:
POUT 20 W
Gain 6.0 dB min.
Silicon Nitride Passivated
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 6.0 A
VCBO 50 V
VEBO 4.0 V
PDISS 75 W @ TC = 25 °C
TSTG -40 °C to +150 °C
JC 2.33 °C/W
PACKAGE STYLE 320 2L FLG
1 = Collector 2 = Base 3 = Emitter
