MMBT2222A - Rectron Semiconductor Inc.

FEATURES

* Epitaxial planar die construction

*Complementary PNP Type available(MMBT2907A)

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

MMBT2222A

2007-5

ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )

MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )

Notes:

CHARACTERISTICS SYMBOL UNITS

417

oC/WThermal Resistance Junction to Ambient

RATINGS

Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25oC

Max. Operating Temperature Range

Storage Temperature Range

SYMBOL

PD

TJ

TSTG

R qJA

VALUE

MAX.

-

TYP.

-

MIN.

UNITS

mW300

1. Alumina=0.4*0.3*0.024in. 99.5% alumina.

2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)".

150

-55 to +150

oC

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(NPN)

Dimensions in inches and (millimeters)

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

1

3

BASE

EMITTER

COLLECTOR

2

1

3

2

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.047(1.20)

0.055(1.40)

ELECTRICAL CHARACTERISTICS

(@TA=25OC unless otherwise noted)

OFF CHARACTERISTICS

ON CHARACTERISTICS

SMALL-SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

Chatacteristic

Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)

Collector-Base Breakdown Voltage (IC= 10mAdc, IE= 0)

Emitter-Base Breakdown Voltage (IE= 10mAdc, IC= 0)

Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc

Collector Cutoff Current (VCB= 60Vdc, IE= 0)

(VCB= 60Vdc, IE= 0, TA= 125OC)

Emitter Cutoff Current (VEB= 3.0Vdc, IC= 0)

Base Cutoff Current (VCE= 60Vdc, VEB(off)= 3.0Vdc

DC Current Gain (IC= 10mAdc, VCE= 10Vdc, TA= -55OC)

Collector-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc)

(IC= 500mAdc, VCE= 10Vdc) (1)

V(BR)CEO 40 - Vdc

V(BR)CBO 75 - Vdc

V(BR)EBO 6.0 - Vdc

ICEX

ICBO

IEBO

IBL

- 0.1

- 0.01

-

10

0.1

20

uAdc

Vdc

uAdc

nAdc

fT300 - MHz

hFE

35 -

-

40 -

VCE(sat)

-0.3

- 1.0

uAdc

Symbol Min Max Unit

(IC= 500mAdc, IB= 50mAdc)

Base-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc)

Current-Gain-Bandwidth Product (2) (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)

Cibo - 25 pF

rb,Cc

td

tr

ts

tf

- 150 ps

NF -

-

4.0

ns

dB

ns

hie

2.0 8.0

0.25 1.25

k

W

hre

- 8.0

- 4.0

X 10-

4

hfe

50 300

75 375

-

hoe

5.0 35

25 200

225

60

10

25

umhos

Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)

Input Impedance (IC= 1.0mAdc, VCE=10Vdc, f=1.0kHz)

Voltage Feedback Ratio (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)

Small-Signal Current Gain (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)

Output Admittance (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)

Collector Base Time Constant (IE= 20mAdc, VCB= 20Vdc, f= 31.8MHz)

Noise Figure (IC= 100mAdc, VCE= 10Vdc, RS= 1.0k

W

, f= 1.0kHz)

(VCC= 30Vdc, VBE(off)= -0.5Vdc, IC= 150mAdc, IB1= 15mAdc)

(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)

(IC= 10mAdc, VCE=10Vdc, f=1.0kHz)

(IC= 10mAdc, VCE=10Vdc, f= 1.0kHz)

(IC= 10mAdc, VCE= 10Vdc, f= 1.0kHz)

VdcVBE(sat)

0.6 1.2

-2.0

(IC= 500mAdc, IB= 50mAdc)

Delay Time

Rise Time

Storage Time

Fall Time

NOTES : 1. Pulse Test: Pulse Width<300ms,Duty Cycle<2.0%

2. fT is defined as the frequency at which |hfe| extrapolates to unity

- -

RATING AND CHARACTERISTICS CURVES ( MMBT2222A )

5.0 7.0 10 20 30 50 70 100 200 300 500

Figure 3.Turn-On Time

IC,CLLECTOR CURRENT (mA)

Figure 4.Turn-Off Time

IC,CLLECTOR CURRENT (mA)

5.0 7.0 10 20 30 50 70 100 200 300 500

20

30

10

7.0

5.0

2.0

3.0

200

100

70

50

t,TIME (ns)

50

70

30

20

10

5.0

7.0

500

300

200

100

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB,BASE CURRENT (mA)

Figure 2. Collector Saturation Region

hFE, DCCURRENT GAIN

01 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0k

IC,CCLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

0.8

0.6

0.4

0.2

0

VCE, COLLECTOR-EMITTER VOLTAGE (V)

1.0

200

300

500

700

1000

50

30

20

10

100

70

t

r

@V

CC

=30V

t

d

@V

EB

(off)=2.0V

t

d

@V

EB

(off)=0

V

CC

=30V

I

C

/I

B

=10

I

B1

=I

B2

T

J

=25OC

t's=ts-1/8tf

tf

I

C

/I

B

=10

T

J

=25OC

RATING AND CHARACTERISTICS CURVES ( MMBT2222A )

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5000.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k

IC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA)

Figure 10.Temperature CoefficientsFigure 9."On" Voltages

+0.5

-2.5

-2.0

-1.5

-1.0

-0.5

0

COEFFICIENT (mV/OC)

0

0.2

0.4

0.6

0.8

1.0

V, VOLTAGE (V)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 1000.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 7.Capacitances Figure 8.Currunt-Gain Bandwidth Product

2.0

3.0

5.0

7.0

10

20

CAPACITANCE (PF)

T, CURRENT-GAINBANDWIDTHPRODUCT (MHz)

50

70

300

500

100

200

NT, NOISE FIGURE (dB)

6.0

10

8.0

0

4.0

2.0

30

50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

f, FREQUENCY (KHz) RS,SOURCE RESISTANCE (OHMS)

Figure 5.Frequency Effects Figure 6.Source Resistance Effects

NF, NOISE FIGURE (dB)

6.0

10

8.0

0

4.0

2.0

IC=1.0mA,RS=150W

500uA,RS=200W

100uA,RS=2.0KW

50uA,RS=4.0KW

RS=OPTIMUM

SOURCE

RESISTANCE

IC=

50uA

100uA

500uA

1.0mA

f=1.0KHz

VCE=20V

TJ=25

O

C

Ceb

C

b

TJ=25

O

C

VBE(sat)@IC/IB=10

VBE(on)@VCE=10V

VCE(sat)@IC/IB=10

1.0V

R

q

VC for VCE(sat)

RqVB for VBE

Rectron Inc reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet-

ers which may be included on RECTRON data sheets and/ or specifications ca-

n and do vary in different applications and actual performance may vary over ti-

me. Rectron Inc does not assume any liability arising out of the application or

use of any product or circuit.

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