TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/562
T4-LDS-0113 Rev. 2 (101520) Page 1 of 3
DEVICES LEVELS
2N6804 JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS -100 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 -11 Adc
Continuous Drain Current
T
C = +100°C ID2 -7 Adc
Max. Power Dissipation
T
C = +25°C Ptl 75
(1) W
Drain to Source On State Resistance Rds(on) 0.3
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = -7A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS -100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -0.25mA
VDS ≥ VGS, ID = -0.25mA, Tj = +125°C
VDS ≥ VGS, ID = -0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, T
j
= +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
IDSS1
IDSS2
-25
-0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = -10V, ID = -7A pulsed
VGS = -10V, ID = -11A pulsed
Tj = +125°C
VGS = -10V, ID = -7A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.3
0.36
0.55
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = -11A pulsed VSD -4.7 Vdc
2N6804
TO-204AA (TO-3)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0113 Rev. 2 (101520) Page 2 of 3
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
Qg(on)
Qgs
Qgd
nC
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = -10V, ID = -11A
VDS = -80V
29
7.1
21
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = -11A, VGS = -10Vdc,
Gate drive impedance = 7.5Ω,
VDD = -35Vdc
td(on)
tr
td(off)
tf
60
140
140
140
ns
Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ -50V,
IF = -11A trr 250 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0113 Rev. 2 (101520) Page 3 of 3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane.
Measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a
.930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch
(0.15 mm) convex overall.
5. Mounting holes shall be deburred on the seating plane side.
6. Drain is electrically connected to case.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions of transistor (TO-204AA).
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
CH .250 .360 6.35 9.15 3
LD .038 .043 0.97 0.110
CD .875 22.23
PS .420 .440 10.67 11.18 3
PS1 .205 .225 5.21 5.72 3
HT .060 .135 1.52 3.43
LL .312 .500 7.92 12.70
LL1 .050 1.27
MHD .151 .161 3.84 4.09
MHS 1.177 1.197 29.90 30.40
HR .495 .525 12.57 13.34
HR1 .131 .188 3.33 4.78
s1 .655 .675 16.64 17.15
