VEMD5080X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 19-Jan-17 1Document Number: 84386
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD5080X01 is a high speed and high sensitive PIN
photodiode with enhanced sensitivity for visible light. It is a
low profile surface-mount device (SMD) including the chip
with a 7.5 mm2 sensitive area detecting visible and near
infrared radiation.
FEATURES
Package type: surface-mount
Package form: top view
Dimensions (L x W x H in mm): 5 x 4 x 0.9
Radiant sensitive area (in mm2): 7.5
AEC-Q101 qualified
Enhanced sensitivity for visible light
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 65°
Floor life: 72 h, MSL 4, according to J-STD-020
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
High speed photo detector
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm)
VEMD5080X01 45 ± 65 350 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5080X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5080X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR20 V
Power dissipation Tamb 25 °C PV215 mW
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +110 °C
Storage temperature range Tstg -40 to +110 °C
Soldering temperature According to reflow solder profile Fig. 8 Tsd 260 °C
Thermal resistance junction / ambient RthJA 350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM 2 kV
VEMD5080X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 19-Jan-17 2Document Number: 84386
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF-0.91.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 20 - - V
Reverse dark current VR = 10 V, E = 0 Iro - 0.2 10 nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD-80-pF
VR = 3 V, f = 1 MHz, E = 0 CD-3040pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo- 320 - mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo --3.0-mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik-45-μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk -0.1-%/K
Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 33 45 53 μA
Ee = 0.2 mW/cm2, λ = 525 nm, VR = 5 V Ira 3.1 5.0 6.6 μA
Angle of half sensitivity ϕ 65-deg
Wavelength of peak sensitivity λp- 950 - nm
Range of spectral bandwidth λ0.1 - 350 to 1100 - nm
Rise time VR = 10 V, RL = 1 kΩ, λ = 830 nm tr-70-ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 830 nm tf-70-ns
0.1
1
10
100
1000
020406080100
Iro - Reverse Dark Current (nA)
Tamb - Ambient Temperature (°C)
VR= 10 V
0.8
0.9
1.0
1.1
1.2
-40-200 20406080100
Ira rel - Relative Reverse Light Current
Tamb - Ambient Temperature (°C)
Ee= 1 mW/cm2
λ= 950 nm
VR= 5 V
VEMD5080X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 19-Jan-17 3Document Number: 84386
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Sensitivity vs. Angular Displacement
0.1
1
10
100
0.01 0.1 1
Ira - Reverse Light Current (μA)
Ee- Irradiance (mW/cm2)
VR= 5 V, λ= 950 nm
0.1
1
10
100
0.1 1 10 100
Ira - Reverse Light Current (μA)
VR- Reverse Voltage (V)
0.01 mW/cm2
0.05 mW/cm2
0.1 mW/cm2
0.5 mW/cm2
1.0 mW/cm2
λ= 950 nm
0
10
20
30
40
50
60
70
80
90
0.001 0.01 0.1 1 10
Cp- Capacitance (pF)
VR- Reverse Voltage (V)
f = 1 MHz, E = 0
0
0.2
0.4
0.6
0.8
1.0
400 500 600 700 800 900 1000 1100
S(λ)rel - Relative Spectral Sensitivity
λ- Wavelength (nm)
0.4 0.2 00.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
Srpel - Relative Sensitivity
VEMD5080X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 19-Jan-17 4Document Number: 84386
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
1
1
5.2
1
Center of device
Recommended footprint
4.1
Optical
window
Top view
Bottom view
Detail X ( 20 : 1 )
0.2
0.1
4
5
2.1
1.8
3
3
Optical
center
1.8
Detail X
0.9 ± 0.15
Tie bar, electrically connected to cathode
0.8 1.2
0.9
1.2
2.5
0.8
0.6 (4 x)
3.1
Exposed pad
(cathode)
0.4 (4 x)
2
2
Cathode
0.6
NC
Anode
0.65
0.8
Drawing- No.: 6.550-5329.01-4
Issue: 3; 11.11.2016
Not indicated tolerances ± 0.1 Technical drawings
according to DIN
specication
VEMD5080X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 19-Jan-17 5Document Number: 84386
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS in millimeters
Drawing-No.: 9.800-5129.01-4;
Issue: 1; 20.07.2015
X
B-B ( 2 : 1 )
X
B
B
Reel-design is reperesentative for different types
Unreel direction
Label posted
here
0.3
1.42
Ø 1.5
Ø 1.55
8
2
1.75
5.5
Anode
VEMD5080X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 19-Jan-17 6Document Number: 84386
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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