36
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1908
–120
–120
–6
–8
–3
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1908
–10max
–10max
–120min
50min∗
–0.5max
20typ
300typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–120V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–3A
IC=–3A, IB=–0.3A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
VCC
(V)
–40
RL
(Ω)
10
IC
(A)
–4
VBB2
(V)
5
IB2
(A)
0.4
ton
(
µ
s)
0.14typ
tstg
(
µ
s)
1.40typ
tf
(
µ
s)
0.21typ
IB1
(A)
–0.4
2SA1908
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–8
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–350mA
–200mA
–150mA
–25mA
–100mA
–75mA
–50mA
I
B
=–10mA
0
–3
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–8A
–4A
–2A 0
–8
–6
–2
–4
0 –1.5–1.0–0.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.02 –0.1 –0.5 –1 –8–5
30
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
DC
Without Heatsink
Natural Cooling
100ms
10ms
–10–5 –50 –100 –150
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
0.02 0.10.05 0.5 1 5 8
0
20
10
30
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
0.2
0.5
4
1
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
80
60
40
20
3.5
005025 75 125100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –8
30
50
100
300
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
∗hFE Rank O(50to100), P(70to140), Y(90to180)
