2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) -10max A V IEBO VEB=-6V -10max A -6 V V(BR)CEO -8 A hFE -120min 50min V -3 A IC=-3A, IB=-0.3A -0.5max V PC 75(Tc=25C) W fT VCE=-12V, IE=0.5A 20typ MHz 150 C COB VCB=-10V, f=1MHz 300typ pF -55 to +150 C hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 RL () IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) -40 10 -4 -10 5 -0.4 0.4 0.14typ 1.40typ 0.21typ I B =-10mA 0 0 -1 -2 -3 -4 -4A 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 h FE - I C Temperature Characteristics (Typical) (V C E =-4V) 300 DC Curr ent Gain h FE Typ 100 50 -0.5 -1 125C 25C 100 -30C 50 30 -0.02 -5 -8 Transient Thermal Resistance 200 -0.1 -0.5 -0.5 4 1 0.5 -1 -5 -8 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T - I E Characteristics (Typical) -1.5 j-a - t Characteristics 0.2 -0.1 Collector Current I C (A) -1.0 Base-Emittor Voltage V B E (V) (V C E =-4V) 30 -0.02 0 Base Current I B (A) h FE - I C Characteristics (Typical) mp) -2A Collector-Emitter Voltage V C E (V) DC Curr ent Gain h FE -2 I C =-8A e Te -1 (Cas -2 -4 mp) -25mA -6 e Te -50mA -4 -2 Cas -7 5m A -6 C ( mA E (V C E =-4V) 125 -100 C Weight : Approx 6.5g a. Type No. b. Lot No. -8 Collector Current I C (A) A j - a (C/W) -1 m 50 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) -3 -2 A 3.35 1.5 I C - V BE Temperature Characteristics (Typical) -3 m 00 4.4 B V CE ( sat ) - I B Characteristics (Typical) 0.65 +0.2 -0.1 5.450.1 1.5 VCC (V) -8 0.8 2.15 5.450.1 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) 1.75 -30C Tstg mp) Tj o3.30.2 a b 16.2 IB VCE(sat) 3.0 IC=-50mA VCE=-4V, IC=-3A 3.45 0.2 e Te IC 5.50.2 (Cas VEBO 25C -120 15.60.2 23.00.3 VCEO 0.80.2 VCB=-120V V 5.5 ICBO -120 1.6 Unit VCBO External Dimensions FM100(TO3PF) (Ta=25C) 2SA1908 Unit 3.3 Symbol Conditions 2SA1908 9.50.2 Electrical Characteristics Absolute maximum ratings (Ta=25C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 80 -10 Typ -10 -50 -100 -150 Collector-Emitter Voltage V C E (V) Collector Curr ent I C (A) nk -0.1 -5 si 36 8 40 at Emitter Current I E (A) 5 Without Heatsink Natural Cooling he 1 -0.5 ite 0.5 -1 60 fin 0.05 0.1 s In 10 m s ith 20 0 0.02 DC -5 10 0m W Cut-o ff Fr eque ncy f T ( MH Z ) 10 Ma xim um Powe r Dissipat io n P C (W) -20 30 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(C) 125 150