Rev.5.00 Sep 07, 2005 page 1 of 7
2SK2586
Silicon N Channel MOS FET REJ03G1020-0500
(Previous: ADE-208-358C)
Rev.5.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
RDS(on) = 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1. Gate
2. Drain
(Flange
)
3. Source
D
G
S
123
2SK2586
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID*2 60 A
Drain peak current ID(pulse)*1 240 A
Body to drain diode reverse drain current IDR*2 60 A
Avalanche current IAP*3 45 A
Avalanche energy EAR*3 174 mJ
Channel dissipation Pch*2 125 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 7 10 mΩ I
D = 30 A, VGS = 10 V*4
Static drain to source on state
resistance RDS(on) — 10 16 mΩ I
D = 30 A, VGS = 4 V*4
Forward transfer admittance |yfs| 35 60 — S ID = 30 A, VDS = 10 V*4
Input capacitance Ciss — 3550 — pF
Output capacitance Coss — 1760 — pF
Reverse transfer capacitance Crss — 500 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 35 — ns
Rise time tr — 260 — ns
Turn-off delay time td(off) — 480 — ns
Fall time tf — 370 — ns
ID = 30 A, VGS = 10 V,
RL = 1.0 Ω
Body to drain diode forward v oltage VDF — 0.94 — V IF = 60 A, VGS = 0
Body to drain diode reverse
recovery time trr — 140 — ns
IF = 60 A, VGS = 0
diF / dt = 50 A / µs
Note: 4. Pulse Test
2SK2586
Rev.5.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature T
C
(°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Drain Current
100
80
60
40
20
0
Pulse Test
3.5 V
4 V
5 V
10 V
3 V
V
GS
= 2.5 V
246810
6 V
100
80
60
40
20
0
V
DS
= 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
12345
1.0
0.8
0.6
0.4
0.2
0
Pulse Test
246810
I
D
= 50 A
20 A
10 A
1 10 100 1000
330 300
0.5
0.2
0.1
0.02
0.05
0.01
0.002
0.005
0.001
0.0005
V
GS
= 4 V
10 V
Pulse Test
200
150
100
50
050 100 150 200
500
200
100
20
50
10
2
5
1
0.5
0.1 0.3 1 310 30 100
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
2SK2586
Rev.5.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A) Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
0.04
0.032
0.024
0.016
0.008
–40 0 40 80 120 160
0
Pulse Test
I
D
= 50 A
V
GS
= 4 V
10 V
10, 20 A
10, 20, 50 A
0.1 0.3 1 3 10 30 100
VDS = 10 V
Pulse Test
500
100
200
20
50
10
2
5
1
0.5
25°C
Tc = –25°C
75°C
0.1 0.3 1 3 10 30 100
5000
2000
1000
200
500
100
20
50
10
5
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
01020304050
10000
2000
5000
1000
100
200
500
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
20
16
12
8
4
40 80 120 160 200
0
V
DD
= 10 V
25 V
50 V
I
D
= 50 A
V
GS
V
DS
V
DD
= 50 V
25 V
10 V
5000
2000
1000
200
500
100
20
10
50
5
0.1 0.3 1 3 10 30 100
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
tf
tr
td(on)
td(off)
2SK2586
Rev.5.00 Sep 07, 2005 page 5 of 7
100
80
60
40
20
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Pulse Test
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
= 0, –5 V
10 V
5 V
200
160
120
80
40
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
25 50 75 100 125 150
0
I
AP
= 45 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50 Ω
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit and Waveform
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
P
DM
PW
T
D = PW
T
θch – c(t) = γs (t) • θch – c
θch – c = 1.0°C/W, Tc = 25°C
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2586
Rev.5.00 Sep 07, 2005 page 6 of 7
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Waveform
2SK2586
Rev.5.00 Sep 07, 2005 page 7 of 7
Package Dimensions
φ
3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max 2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Package Name
PRSS0004ZE-A TO-3P / TO-3PV
MASS[Typ.]
5.0gSC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK2586-E 30 pcs Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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